KR102783652B1 - 피처리체의 처리 방법 및 플라즈마 처리 장치 - Google Patents

피처리체의 처리 방법 및 플라즈마 처리 장치 Download PDF

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KR102783652B1
KR102783652B1 KR1020190139219A KR20190139219A KR102783652B1 KR 102783652 B1 KR102783652 B1 KR 102783652B1 KR 1020190139219 A KR1020190139219 A KR 1020190139219A KR 20190139219 A KR20190139219 A KR 20190139219A KR 102783652 B1 KR102783652 B1 KR 102783652B1
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processing
plasma
gas
etching
upper electrode
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KR20200052226A (ko
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세이지 요코야마
다이치 오카노
쇼 오이카와
슌이치 가와사키
šœ이치 가와사키
도시후미 나가이와
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도쿄엘렉트론가부시키가이샤
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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KR1020190139219A 2018-11-05 2019-11-04 피처리체의 처리 방법 및 플라즈마 처리 장치 Active KR102783652B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-208028 2018-11-05
JP2018208028A JP7175162B2 (ja) 2018-11-05 2018-11-05 被処理体のプラズマエッチング方法及びプラズマエッチング装置

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KR20200052226A KR20200052226A (ko) 2020-05-14
KR102783652B1 true KR102783652B1 (ko) 2025-03-18

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US (1) US11610766B2 (enrdf_load_stackoverflow)
JP (1) JP7175162B2 (enrdf_load_stackoverflow)
KR (1) KR102783652B1 (enrdf_load_stackoverflow)
CN (1) CN111146081B (enrdf_load_stackoverflow)
TW (1) TWI829787B (enrdf_load_stackoverflow)

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Publication number Priority date Publication date Assignee Title
US11721595B2 (en) * 2019-01-11 2023-08-08 Tokyo Electron Limited Processing method and plasma processing apparatus
CN114342037B (zh) * 2019-08-01 2023-12-08 朗姆研究公司 清洁边缘环凹部的系统和方法

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US20050103748A1 (en) * 2002-06-27 2005-05-19 Tokyo Electron Limited Plasma processing method
US20100081285A1 (en) * 2008-09-30 2010-04-01 Tokyo Electron Limited Apparatus and Method for Improving Photoresist Properties
JP6050944B2 (ja) 2012-04-05 2016-12-21 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマ処理装置

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JPS6050944B2 (ja) * 1977-04-15 1985-11-11 松下電工株式会社 水切り材の接合装置
JPS6366937A (ja) * 1986-09-09 1988-03-25 Tokyo Ohka Kogyo Co Ltd シリコ−ン系被膜のパタ−ン形成方法
JP2003243363A (ja) * 2002-02-15 2003-08-29 Seiko Epson Corp エッチング方法、エッチング装置及び半導体装置の製造方法
WO2004003988A1 (ja) * 2002-06-27 2004-01-08 Tokyo Electron Limited プラズマ処理方法
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP4830288B2 (ja) * 2004-11-22 2011-12-07 富士電機株式会社 プラズマ制御方法およびプラズマ制御装置
JP4884047B2 (ja) * 2006-03-23 2012-02-22 東京エレクトロン株式会社 プラズマ処理方法
US7407597B2 (en) * 2006-09-14 2008-08-05 Lam Research Corporation Line end shortening reduction during etch
JP4979430B2 (ja) * 2007-03-26 2012-07-18 株式会社日立ハイテクノロジーズ プラズマエッチング方法
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