KR102750871B1 - 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램 - Google Patents

기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램 Download PDF

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KR102750871B1
KR102750871B1 KR1020210092742A KR20210092742A KR102750871B1 KR 102750871 B1 KR102750871 B1 KR 102750871B1 KR 1020210092742 A KR1020210092742 A KR 1020210092742A KR 20210092742 A KR20210092742 A KR 20210092742A KR 102750871 B1 KR102750871 B1 KR 102750871B1
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gas
substrate
layer
etching
film
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KR20220009897A (ko
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기미히코 나카타니
료타 우에노
모토무 데가이
다카시 나카가와
요시토모 하시모토
요시로 히로세
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가부시키가이샤 코쿠사이 엘렉트릭
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Publication of KR20220009897A publication Critical patent/KR20220009897A/ko
Priority to KR1020250000164A priority Critical patent/KR20250011979A/ko
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    • H01L21/31116—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H01L21/32135—
    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
KR1020210092742A 2020-07-16 2021-07-15 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램 Active KR102750871B1 (ko)

Priority Applications (1)

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KR1020250000164A KR20250011979A (ko) 2020-07-16 2025-01-02 처리 방법, 반도체 장치의 제조 방법, 처리 장치, 및 프로그램

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2020-122454 2020-07-16
JP2020122454A JP7174016B2 (ja) 2020-07-16 2020-07-16 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム

Related Child Applications (1)

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KR1020250000164A Division KR20250011979A (ko) 2020-07-16 2025-01-02 처리 방법, 반도체 장치의 제조 방법, 처리 장치, 및 프로그램

Publications (2)

Publication Number Publication Date
KR20220009897A KR20220009897A (ko) 2022-01-25
KR102750871B1 true KR102750871B1 (ko) 2025-01-09

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KR1020210092742A Active KR102750871B1 (ko) 2020-07-16 2021-07-15 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램
KR1020250000164A Pending KR20250011979A (ko) 2020-07-16 2025-01-02 처리 방법, 반도체 장치의 제조 방법, 처리 장치, 및 프로그램

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Country Status (5)

Country Link
US (2) US11699593B2 (https=)
JP (2) JP7174016B2 (https=)
KR (2) KR102750871B1 (https=)
CN (2) CN120033118A (https=)
TW (2) TWI841056B (https=)

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US12417922B2 (en) 2021-04-28 2025-09-16 Central Glass Company, Limited Surface treatment method, dry etching method, cleaning method, semiconductor device manufacturing method, and etching device
JP7313402B2 (ja) * 2021-06-29 2023-07-24 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム及びエッチング方法
CN117157734A (zh) * 2022-03-29 2023-12-01 株式会社国际电气 衬底处理方法、半导体器件的制造方法、程序及衬底处理装置
JP7838899B2 (ja) * 2022-06-07 2026-04-01 東京エレクトロン株式会社 基板処理方法及び基板処理装置
EP4540856A4 (en) * 2022-06-14 2026-03-25 Air Liquide SIDE WALL PASSIVATION LAYERS AND THEIR FORMATION PROCESS DURING HIGH ASPECT RATIO PLASMA ETCHING
JP7561795B2 (ja) 2022-06-17 2024-10-04 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP7808542B2 (ja) * 2022-11-29 2026-01-29 東京エレクトロン株式会社 処理方法及び処理システム
TWI895928B (zh) * 2023-03-22 2025-09-01 日商國際電氣股份有限公司 蝕刻方法、半導體裝置之製造方法、程式及處理裝置
JP2025040215A (ja) 2023-09-11 2025-03-24 株式会社Kokusai Electric 処理方法、半導体装置の製造方法、処理装置、およびプログラム
WO2025253805A1 (ja) * 2024-06-06 2025-12-11 東京エレクトロン株式会社 基板処理方法及び基板処理装置

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US20190198345A1 (en) 2016-03-01 2019-06-27 Lam Research Corporation Atomic layer etching using a combination of plasma and vapor treatments

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JP4921206B2 (ja) 2006-03-02 2012-04-25 キヤノン株式会社 液晶パネルの製造方法
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
JP4968861B2 (ja) * 2009-03-19 2012-07-04 東京エレクトロン株式会社 基板のエッチング方法及びシステム
JP5036849B2 (ja) 2009-08-27 2012-09-26 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置
JP6022166B2 (ja) * 2011-02-28 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6035161B2 (ja) * 2012-03-21 2016-11-30 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
US9431268B2 (en) * 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
CN107112235B (zh) * 2015-01-07 2020-11-20 株式会社国际电气 半导体器件的制造方法、衬底处理装置及记录介质
JP6532066B2 (ja) 2015-03-30 2019-06-19 東京エレクトロン株式会社 原子層をエッチングする方法
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JP6929148B2 (ja) * 2017-06-30 2021-09-01 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP6843087B2 (ja) 2018-03-12 2021-03-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
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US20190198345A1 (en) 2016-03-01 2019-06-27 Lam Research Corporation Atomic layer etching using a combination of plasma and vapor treatments
US20180166255A1 (en) 2016-12-09 2018-06-14 Asm Ip Holding B.V. Thermal atomic layer etching processes

Also Published As

Publication number Publication date
US20220020598A1 (en) 2022-01-20
JP2022190136A (ja) 2022-12-22
TW202316496A (zh) 2023-04-16
JP7174016B2 (ja) 2022-11-17
US12381091B2 (en) 2025-08-05
US11699593B2 (en) 2023-07-11
CN113948416B (zh) 2025-03-04
US20230307246A1 (en) 2023-09-28
JP7614159B2 (ja) 2025-01-15
KR20220009897A (ko) 2022-01-25
JP2022018973A (ja) 2022-01-27
TWI787832B (zh) 2022-12-21
CN113948416A (zh) 2022-01-18
TWI841056B (zh) 2024-05-01
KR20250011979A (ko) 2025-01-22
CN120033118A (zh) 2025-05-23
TW202205383A (zh) 2022-02-01

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