JP7174016B2 - 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム - Google Patents

基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム Download PDF

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JP7174016B2
JP7174016B2 JP2020122454A JP2020122454A JP7174016B2 JP 7174016 B2 JP7174016 B2 JP 7174016B2 JP 2020122454 A JP2020122454 A JP 2020122454A JP 2020122454 A JP2020122454 A JP 2020122454A JP 7174016 B2 JP7174016 B2 JP 7174016B2
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gas
film
modified layer
etching
substrate
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JP2020122454A
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Japanese (ja)
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JP2022018973A (ja
Inventor
公彦 中谷
亮太 上野
求 出貝
崇 中川
良知 橋本
義朗 ▲ひろせ▼
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Kokusai Electric Corp
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Kokusai Electric Corp
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Priority to JP2020122454A priority Critical patent/JP7174016B2/ja
Priority to TW110118474A priority patent/TWI787832B/zh
Priority to TW111143857A priority patent/TWI841056B/zh
Priority to CN202510170524.3A priority patent/CN120033118A/zh
Priority to CN202110634870.4A priority patent/CN113948416B/zh
Priority to KR1020210092742A priority patent/KR102750871B1/ko
Priority to US17/377,990 priority patent/US11699593B2/en
Publication of JP2022018973A publication Critical patent/JP2022018973A/ja
Priority to JP2022177536A priority patent/JP7614159B2/ja
Application granted granted Critical
Publication of JP7174016B2 publication Critical patent/JP7174016B2/ja
Priority to US18/321,255 priority patent/US12381091B2/en
Priority to KR1020250000164A priority patent/KR20250011979A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2020122454A 2020-07-16 2020-07-16 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム Active JP7174016B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2020122454A JP7174016B2 (ja) 2020-07-16 2020-07-16 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
TW110118474A TWI787832B (zh) 2020-07-16 2021-05-21 半導體裝置之製造方法、基板處理方法、基板處理裝置及程式
TW111143857A TWI841056B (zh) 2020-07-16 2021-05-21 基板處理方法、半導體裝置之製造方法、基板處理裝置及程式
CN202510170524.3A CN120033118A (zh) 2020-07-16 2021-06-07 处理方法、半导体器件的制造方法、处理装置及程序制品
CN202110634870.4A CN113948416B (zh) 2020-07-16 2021-06-07 半导体器件的制造方法、衬底处理装置及记录介质
KR1020210092742A KR102750871B1 (ko) 2020-07-16 2021-07-15 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램
US17/377,990 US11699593B2 (en) 2020-07-16 2021-07-16 Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
JP2022177536A JP7614159B2 (ja) 2020-07-16 2022-11-04 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
US18/321,255 US12381091B2 (en) 2020-07-16 2023-05-22 Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
KR1020250000164A KR20250011979A (ko) 2020-07-16 2025-01-02 처리 방법, 반도체 장치의 제조 방법, 처리 장치, 및 프로그램

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JP2020122454A JP7174016B2 (ja) 2020-07-16 2020-07-16 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム

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JP7174016B2 true JP7174016B2 (ja) 2022-11-17

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JP2022177536A Active JP7614159B2 (ja) 2020-07-16 2022-11-04 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム

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US (2) US11699593B2 (https=)
JP (2) JP7174016B2 (https=)
KR (2) KR102750871B1 (https=)
CN (2) CN120033118A (https=)
TW (2) TWI841056B (https=)

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JP2023005410A (ja) * 2021-06-29 2023-01-18 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム及びエッチング方法

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US12417922B2 (en) 2021-04-28 2025-09-16 Central Glass Company, Limited Surface treatment method, dry etching method, cleaning method, semiconductor device manufacturing method, and etching device
CN117157734A (zh) * 2022-03-29 2023-12-01 株式会社国际电气 衬底处理方法、半导体器件的制造方法、程序及衬底处理装置
JP7838899B2 (ja) * 2022-06-07 2026-04-01 東京エレクトロン株式会社 基板処理方法及び基板処理装置
EP4540856A4 (en) * 2022-06-14 2026-03-25 Air Liquide SIDE WALL PASSIVATION LAYERS AND THEIR FORMATION PROCESS DURING HIGH ASPECT RATIO PLASMA ETCHING
JP7561795B2 (ja) 2022-06-17 2024-10-04 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP7808542B2 (ja) * 2022-11-29 2026-01-29 東京エレクトロン株式会社 処理方法及び処理システム
TWI895928B (zh) * 2023-03-22 2025-09-01 日商國際電氣股份有限公司 蝕刻方法、半導體裝置之製造方法、程式及處理裝置
JP2025040215A (ja) 2023-09-11 2025-03-24 株式会社Kokusai Electric 処理方法、半導体装置の製造方法、処理装置、およびプログラム
WO2025253805A1 (ja) * 2024-06-06 2025-12-11 東京エレクトロン株式会社 基板処理方法及び基板処理装置

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US20220020598A1 (en) 2022-01-20
JP2022190136A (ja) 2022-12-22
TW202316496A (zh) 2023-04-16
US12381091B2 (en) 2025-08-05
US11699593B2 (en) 2023-07-11
CN113948416B (zh) 2025-03-04
US20230307246A1 (en) 2023-09-28
JP7614159B2 (ja) 2025-01-15
KR102750871B1 (ko) 2025-01-09
KR20220009897A (ko) 2022-01-25
JP2022018973A (ja) 2022-01-27
TWI787832B (zh) 2022-12-21
CN113948416A (zh) 2022-01-18
TWI841056B (zh) 2024-05-01
KR20250011979A (ko) 2025-01-22
CN120033118A (zh) 2025-05-23
TW202205383A (zh) 2022-02-01

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