CN120033118A - 处理方法、半导体器件的制造方法、处理装置及程序制品 - Google Patents
处理方法、半导体器件的制造方法、处理装置及程序制品 Download PDFInfo
- Publication number
- CN120033118A CN120033118A CN202510170524.3A CN202510170524A CN120033118A CN 120033118 A CN120033118 A CN 120033118A CN 202510170524 A CN202510170524 A CN 202510170524A CN 120033118 A CN120033118 A CN 120033118A
- Authority
- CN
- China
- Prior art keywords
- gas
- substrate
- film
- etching
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0432—Apparatus for thermal treatment mainly by conduction
Landscapes
- Drying Of Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020122454A JP7174016B2 (ja) | 2020-07-16 | 2020-07-16 | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| JP2020-122454 | 2020-07-16 | ||
| CN202110634870.4A CN113948416B (zh) | 2020-07-16 | 2021-06-07 | 半导体器件的制造方法、衬底处理装置及记录介质 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110634870.4A Division CN113948416B (zh) | 2020-07-16 | 2021-06-07 | 半导体器件的制造方法、衬底处理装置及记录介质 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN120033118A true CN120033118A (zh) | 2025-05-23 |
Family
ID=79292737
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202510170524.3A Pending CN120033118A (zh) | 2020-07-16 | 2021-06-07 | 处理方法、半导体器件的制造方法、处理装置及程序制品 |
| CN202110634870.4A Active CN113948416B (zh) | 2020-07-16 | 2021-06-07 | 半导体器件的制造方法、衬底处理装置及记录介质 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110634870.4A Active CN113948416B (zh) | 2020-07-16 | 2021-06-07 | 半导体器件的制造方法、衬底处理装置及记录介质 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11699593B2 (https=) |
| JP (2) | JP7174016B2 (https=) |
| KR (2) | KR102750871B1 (https=) |
| CN (2) | CN120033118A (https=) |
| TW (2) | TWI841056B (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12417922B2 (en) | 2021-04-28 | 2025-09-16 | Central Glass Company, Limited | Surface treatment method, dry etching method, cleaning method, semiconductor device manufacturing method, and etching device |
| JP7313402B2 (ja) * | 2021-06-29 | 2023-07-24 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、プログラム及びエッチング方法 |
| CN117157734A (zh) * | 2022-03-29 | 2023-12-01 | 株式会社国际电气 | 衬底处理方法、半导体器件的制造方法、程序及衬底处理装置 |
| JP7838899B2 (ja) * | 2022-06-07 | 2026-04-01 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| EP4540856A4 (en) * | 2022-06-14 | 2026-03-25 | Air Liquide | SIDE WALL PASSIVATION LAYERS AND THEIR FORMATION PROCESS DURING HIGH ASPECT RATIO PLASMA ETCHING |
| JP7561795B2 (ja) | 2022-06-17 | 2024-10-04 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| JP7808542B2 (ja) * | 2022-11-29 | 2026-01-29 | 東京エレクトロン株式会社 | 処理方法及び処理システム |
| TWI895928B (zh) * | 2023-03-22 | 2025-09-01 | 日商國際電氣股份有限公司 | 蝕刻方法、半導體裝置之製造方法、程式及處理裝置 |
| JP2025040215A (ja) | 2023-09-11 | 2025-03-24 | 株式会社Kokusai Electric | 処理方法、半導体装置の製造方法、処理装置、およびプログラム |
| WO2025253805A1 (ja) * | 2024-06-06 | 2025-12-11 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4395896B2 (ja) * | 1998-03-10 | 2010-01-13 | ソニー株式会社 | 半導体装置の製造方法 |
| JP4921206B2 (ja) | 2006-03-02 | 2012-04-25 | キヤノン株式会社 | 液晶パネルの製造方法 |
| US7416989B1 (en) | 2006-06-30 | 2008-08-26 | Novellus Systems, Inc. | Adsorption based material removal process |
| JP4968861B2 (ja) * | 2009-03-19 | 2012-07-04 | 東京エレクトロン株式会社 | 基板のエッチング方法及びシステム |
| JP5036849B2 (ja) | 2009-08-27 | 2012-09-26 | 株式会社日立国際電気 | 半導体装置の製造方法、クリーニング方法および基板処理装置 |
| JP6022166B2 (ja) * | 2011-02-28 | 2016-11-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP6035161B2 (ja) * | 2012-03-21 | 2016-11-30 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| US9431268B2 (en) * | 2015-01-05 | 2016-08-30 | Lam Research Corporation | Isotropic atomic layer etch for silicon and germanium oxides |
| CN107112235B (zh) * | 2015-01-07 | 2020-11-20 | 株式会社国际电气 | 半导体器件的制造方法、衬底处理装置及记录介质 |
| JP6532066B2 (ja) | 2015-03-30 | 2019-06-19 | 東京エレクトロン株式会社 | 原子層をエッチングする方法 |
| US9953843B2 (en) | 2016-02-05 | 2018-04-24 | Lam Research Corporation | Chamber for patterning non-volatile metals |
| US10256108B2 (en) * | 2016-03-01 | 2019-04-09 | Lam Research Corporation | Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments |
| US10283369B2 (en) | 2016-08-10 | 2019-05-07 | Tokyo Electron Limited | Atomic layer etching using a boron-containing gas and hydrogen fluoride gas |
| US10280519B2 (en) * | 2016-12-09 | 2019-05-07 | Asm Ip Holding B.V. | Thermal atomic layer etching processes |
| JP6929148B2 (ja) * | 2017-06-30 | 2021-09-01 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| JP6843087B2 (ja) | 2018-03-12 | 2021-03-17 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP7133975B2 (ja) | 2018-05-11 | 2022-09-09 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| US11637022B2 (en) * | 2018-07-09 | 2023-04-25 | Lam Research Corporation | Electron excitation atomic layer etch |
| SG11202100439PA (en) * | 2018-07-17 | 2021-02-25 | Kokusai Electric Corp | Method of manufacturing semiconductor device, substrate processing apparatus and program |
| JP7114554B2 (ja) | 2019-11-22 | 2022-08-08 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
-
2020
- 2020-07-16 JP JP2020122454A patent/JP7174016B2/ja active Active
-
2021
- 2021-05-21 TW TW111143857A patent/TWI841056B/zh active
- 2021-05-21 TW TW110118474A patent/TWI787832B/zh active
- 2021-06-07 CN CN202510170524.3A patent/CN120033118A/zh active Pending
- 2021-06-07 CN CN202110634870.4A patent/CN113948416B/zh active Active
- 2021-07-15 KR KR1020210092742A patent/KR102750871B1/ko active Active
- 2021-07-16 US US17/377,990 patent/US11699593B2/en active Active
-
2022
- 2022-11-04 JP JP2022177536A patent/JP7614159B2/ja active Active
-
2023
- 2023-05-22 US US18/321,255 patent/US12381091B2/en active Active
-
2025
- 2025-01-02 KR KR1020250000164A patent/KR20250011979A/ko active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20220020598A1 (en) | 2022-01-20 |
| JP2022190136A (ja) | 2022-12-22 |
| TW202316496A (zh) | 2023-04-16 |
| JP7174016B2 (ja) | 2022-11-17 |
| US12381091B2 (en) | 2025-08-05 |
| US11699593B2 (en) | 2023-07-11 |
| CN113948416B (zh) | 2025-03-04 |
| US20230307246A1 (en) | 2023-09-28 |
| JP7614159B2 (ja) | 2025-01-15 |
| KR102750871B1 (ko) | 2025-01-09 |
| KR20220009897A (ko) | 2022-01-25 |
| JP2022018973A (ja) | 2022-01-27 |
| TWI787832B (zh) | 2022-12-21 |
| CN113948416A (zh) | 2022-01-18 |
| TWI841056B (zh) | 2024-05-01 |
| KR20250011979A (ko) | 2025-01-22 |
| TW202205383A (zh) | 2022-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113948416B (zh) | 半导体器件的制造方法、衬底处理装置及记录介质 | |
| CN113314393B (zh) | 半导体器件的制造方法、衬底处理装置及记录介质 | |
| CN112309830B (zh) | 半导体器件的制造方法、衬底处理装置及记录介质 | |
| CN116435177A (zh) | 衬底处理方法、半导体器件的制造方法、衬底处理装置及记录介质 | |
| KR102841915B1 (ko) | 기판 처리 방법, 반도체 장치의 제조 방법, 프로그램 및 기판 처리 장치 | |
| CN112838003B (zh) | 半导体器件的制造方法、衬底处理装置及记录介质 | |
| KR20250091068A (ko) | 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 | |
| TWI852120B (zh) | 基板處理方法，半導體裝置的製造方法，基板處理裝置及程式 | |
| US20260096366A1 (en) | Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium | |
| US20250232975A1 (en) | Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium | |
| JP2024120206A (ja) | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |