KR102750871B1 - 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램 - Google Patents

기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램 Download PDF

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KR102750871B1
KR102750871B1 KR1020210092742A KR20210092742A KR102750871B1 KR 102750871 B1 KR102750871 B1 KR 102750871B1 KR 1020210092742 A KR1020210092742 A KR 1020210092742A KR 20210092742 A KR20210092742 A KR 20210092742A KR 102750871 B1 KR102750871 B1 KR 102750871B1
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gas
substrate
layer
etching
film
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KR20220009897A (ko
Inventor
기미히코 나카타니
료타 우에노
모토무 데가이
다카시 나카가와
요시토모 하시모토
요시로 히로세
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가부시키가이샤 코쿠사이 엘렉트릭
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Priority to KR1020250000164A priority Critical patent/KR20250011979A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
KR1020210092742A 2020-07-16 2021-07-15 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램 Active KR102750871B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020250000164A KR20250011979A (ko) 2020-07-16 2025-01-02 처리 방법, 반도체 장치의 제조 방법, 처리 장치, 및 프로그램

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020122454A JP7174016B2 (ja) 2020-07-16 2020-07-16 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
JPJP-P-2020-122454 2020-07-16

Related Child Applications (1)

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KR1020250000164A Division KR20250011979A (ko) 2020-07-16 2025-01-02 처리 방법, 반도체 장치의 제조 방법, 처리 장치, 및 프로그램

Publications (2)

Publication Number Publication Date
KR20220009897A KR20220009897A (ko) 2022-01-25
KR102750871B1 true KR102750871B1 (ko) 2025-01-09

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KR1020210092742A Active KR102750871B1 (ko) 2020-07-16 2021-07-15 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램
KR1020250000164A Pending KR20250011979A (ko) 2020-07-16 2025-01-02 처리 방법, 반도체 장치의 제조 방법, 처리 장치, 및 프로그램

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US (2) US11699593B2 (enExample)
JP (2) JP7174016B2 (enExample)
KR (2) KR102750871B1 (enExample)
CN (2) CN120033118A (enExample)
TW (2) TWI787832B (enExample)

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WO2022230862A1 (ja) 2021-04-28 2022-11-03 セントラル硝子株式会社 表面処理方法、ドライエッチング方法、クリーニング方法、半導体デバイスの製造方法及びエッチング装置
JP7313402B2 (ja) * 2021-06-29 2023-07-24 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム及びエッチング方法
CN117157734A (zh) * 2022-03-29 2023-12-01 株式会社国际电气 衬底处理方法、半导体器件的制造方法、程序及衬底处理装置
JP2023179001A (ja) * 2022-06-07 2023-12-19 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2025519263A (ja) * 2022-06-14 2025-06-24 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 高アスペクト比プラズマエッチング中に側壁パッシベーション層及びそれを形成する方法
JP7561795B2 (ja) * 2022-06-17 2024-10-04 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP2024078128A (ja) * 2022-11-29 2024-06-10 東京エレクトロン株式会社 処理方法及び処理システム
TWI895928B (zh) * 2023-03-22 2025-09-01 日商國際電氣股份有限公司 蝕刻方法、半導體裝置之製造方法、程式及處理裝置
JP2025040215A (ja) 2023-09-11 2025-03-24 株式会社Kokusai Electric 処理方法、半導体装置の製造方法、処理装置、およびプログラム
WO2025253805A1 (ja) * 2024-06-06 2025-12-11 東京エレクトロン株式会社 基板処理方法及び基板処理装置

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US20180166255A1 (en) 2016-12-09 2018-06-14 Asm Ip Holding B.V. Thermal atomic layer etching processes
US20190198345A1 (en) 2016-03-01 2019-06-27 Lam Research Corporation Atomic layer etching using a combination of plasma and vapor treatments

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JP4921206B2 (ja) * 2006-03-02 2012-04-25 キヤノン株式会社 液晶パネルの製造方法
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
JP4968861B2 (ja) * 2009-03-19 2012-07-04 東京エレクトロン株式会社 基板のエッチング方法及びシステム
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JP6022166B2 (ja) * 2011-02-28 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6035161B2 (ja) * 2012-03-21 2016-11-30 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
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US20190198345A1 (en) 2016-03-01 2019-06-27 Lam Research Corporation Atomic layer etching using a combination of plasma and vapor treatments
US20180166255A1 (en) 2016-12-09 2018-06-14 Asm Ip Holding B.V. Thermal atomic layer etching processes

Also Published As

Publication number Publication date
US20230307246A1 (en) 2023-09-28
CN120033118A (zh) 2025-05-23
US20220020598A1 (en) 2022-01-20
TWI841056B (zh) 2024-05-01
US12381091B2 (en) 2025-08-05
TWI787832B (zh) 2022-12-21
JP7614159B2 (ja) 2025-01-15
CN113948416B (zh) 2025-03-04
KR20220009897A (ko) 2022-01-25
JP7174016B2 (ja) 2022-11-17
KR20250011979A (ko) 2025-01-22
JP2022018973A (ja) 2022-01-27
TW202316496A (zh) 2023-04-16
TW202205383A (zh) 2022-02-01
CN113948416A (zh) 2022-01-18
US11699593B2 (en) 2023-07-11
JP2022190136A (ja) 2022-12-22

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