KR102738456B1 - 반도체 소자 - Google Patents

반도체 소자 Download PDF

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KR102738456B1
KR102738456B1 KR1020160149373A KR20160149373A KR102738456B1 KR 102738456 B1 KR102738456 B1 KR 102738456B1 KR 1020160149373 A KR1020160149373 A KR 1020160149373A KR 20160149373 A KR20160149373 A KR 20160149373A KR 102738456 B1 KR102738456 B1 KR 102738456B1
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South Korea
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layer
light
conductive semiconductor
recess
semiconductor layer
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Korean (ko)
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KR20180052256A (ko
Inventor
성준석
최병균
현구
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쑤저우 레킨 세미컨덕터 컴퍼니 리미티드
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Priority to KR1020160149373A priority Critical patent/KR102738456B1/ko
Priority to JP2019524358A priority patent/JP7118447B2/ja
Priority to US16/348,601 priority patent/US10784409B2/en
Priority to EP17869479.0A priority patent/EP3540793B1/en
Priority to CN201780069747.4A priority patent/CN109983588B/zh
Priority to PCT/KR2017/012751 priority patent/WO2018088851A1/ko
Publication of KR20180052256A publication Critical patent/KR20180052256A/ko
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Publication of KR102738456B1 publication Critical patent/KR102738456B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H01L33/22—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H01L33/10—
    • H01L33/36—
    • H01L33/44—
    • H01L33/50—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

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KR1020160149373A 2016-11-10 2016-11-10 반도체 소자 Active KR102738456B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020160149373A KR102738456B1 (ko) 2016-11-10 2016-11-10 반도체 소자
JP2019524358A JP7118447B2 (ja) 2016-11-10 2017-11-10 半導体素子
US16/348,601 US10784409B2 (en) 2016-11-10 2017-11-10 Semiconductor element
EP17869479.0A EP3540793B1 (en) 2016-11-10 2017-11-10 Semiconductor element
CN201780069747.4A CN109983588B (zh) 2016-11-10 2017-11-10 半导体元件
PCT/KR2017/012751 WO2018088851A1 (ko) 2016-11-10 2017-11-10 반도체 소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160149373A KR102738456B1 (ko) 2016-11-10 2016-11-10 반도체 소자

Publications (2)

Publication Number Publication Date
KR20180052256A KR20180052256A (ko) 2018-05-18
KR102738456B1 true KR102738456B1 (ko) 2024-12-04

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KR1020160149373A Active KR102738456B1 (ko) 2016-11-10 2016-11-10 반도체 소자

Country Status (6)

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US (1) US10784409B2 (enExample)
EP (1) EP3540793B1 (enExample)
JP (1) JP7118447B2 (enExample)
KR (1) KR102738456B1 (enExample)
CN (1) CN109983588B (enExample)
WO (1) WO2018088851A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102575569B1 (ko) * 2018-08-13 2023-09-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
CN111276595A (zh) * 2018-12-04 2020-06-12 展晶科技(深圳)有限公司 发光二极管及其制作方法
CN111276596B (zh) * 2018-12-05 2024-02-06 光宝光电(常州)有限公司 发光单元
KR102734544B1 (ko) * 2019-03-15 2024-11-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
CN110224049A (zh) * 2019-05-31 2019-09-10 深圳市华星光电半导体显示技术有限公司 micro LED芯片及其制备方法
CN114203747B (zh) * 2021-12-08 2025-08-19 泉州三安半导体科技有限公司 一种发光二极管
DE102022119108A1 (de) * 2022-07-29 2024-02-01 Ams-Osram International Gmbh Optoelektronisches halbleiterbauelement und verfahren zur herstellung zumindest eines optoelektronischen halbleiterbauelements

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016171164A (ja) * 2015-03-12 2016-09-23 株式会社東芝 半導体発光装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8008673B2 (en) * 2007-08-03 2011-08-30 Panasonic Corporation Light-emitting device
KR100986570B1 (ko) * 2009-08-31 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101111750B1 (ko) * 2010-04-22 2012-02-16 삼성엘이디 주식회사 반도체 발광 소자
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR101799451B1 (ko) * 2011-06-02 2017-11-20 엘지이노텍 주식회사 발광 소자
EP2562814B1 (en) * 2011-08-22 2020-08-19 LG Innotek Co., Ltd. Light emitting device and light emitting device package
KR101186684B1 (ko) * 2012-03-29 2012-09-28 서울옵토디바이스주식회사 발광 다이오드 및 그것을 제조하는 방법
KR102160070B1 (ko) * 2013-10-28 2020-09-25 서울바이오시스 주식회사 근자외선 발광 소자
KR20130128841A (ko) * 2012-05-18 2013-11-27 삼성전자주식회사 멀티셀 어레이를 갖는 반도체 발광장치 및 그 제조방법, 그리고 발광모듈 및 조명장치
CN102683534B (zh) * 2012-05-21 2015-02-25 厦门市三安光电科技有限公司 垂直式交流发光二极管器件及其制作方法
JP5368620B1 (ja) * 2012-11-22 2013-12-18 株式会社東芝 半導体発光素子及びその製造方法
JP2014139998A (ja) * 2013-01-21 2014-07-31 Toshiba Corp 半導体発光装置
KR102037865B1 (ko) 2013-02-01 2019-10-30 삼성전자주식회사 반도체 발광소자 및 반도체 발광소자 제조방법
DE102013105870A1 (de) * 2013-06-06 2014-12-24 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP6215612B2 (ja) * 2013-08-07 2017-10-18 ソニーセミコンダクタソリューションズ株式会社 発光素子、発光素子ウェーハ及び電子機器
CN104465691A (zh) * 2013-09-16 2015-03-25 上海蓝光科技有限公司 一种高压发光二极管结构及其制造方法
JP2015103590A (ja) 2013-11-22 2015-06-04 スタンレー電気株式会社 半導体発光装置
CN103730479A (zh) * 2013-11-29 2014-04-16 南京大学扬州光电研究院 一种多发光子区GaN基LED集成芯片
US9768345B2 (en) * 2013-12-20 2017-09-19 Apple Inc. LED with current injection confinement trench
KR102197082B1 (ko) * 2014-06-16 2020-12-31 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광소자 패키지
DE112015005634T5 (de) 2014-12-19 2017-09-07 Seoul Viosys Co., Ltd. Halbleiter-lichtemissionseinrichtung und verfahren zur herstellung von dieser
KR102417158B1 (ko) 2015-01-29 2022-07-07 서울바이오시스 주식회사 반도체 발광소자
CN110061027B (zh) * 2015-02-13 2024-01-19 首尔伟傲世有限公司 发光元件
KR102480220B1 (ko) * 2016-04-08 2022-12-26 삼성전자주식회사 발광 다이오드 모듈 및 이를 구비한 디스플레이 패널

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016171164A (ja) * 2015-03-12 2016-09-23 株式会社東芝 半導体発光装置

Also Published As

Publication number Publication date
US10784409B2 (en) 2020-09-22
EP3540793A1 (en) 2019-09-18
KR20180052256A (ko) 2018-05-18
CN109983588B (zh) 2023-07-18
CN109983588A (zh) 2019-07-05
WO2018088851A1 (ko) 2018-05-17
JP2019536274A (ja) 2019-12-12
US20200066938A1 (en) 2020-02-27
JP7118447B2 (ja) 2022-08-16
EP3540793B1 (en) 2024-07-17
EP3540793A4 (en) 2020-06-03

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