KR102674947B1 - 워크의 양면 연마 방법 - Google Patents
워크의 양면 연마 방법 Download PDFInfo
- Publication number
- KR102674947B1 KR102674947B1 KR1020227009330A KR20227009330A KR102674947B1 KR 102674947 B1 KR102674947 B1 KR 102674947B1 KR 1020227009330 A KR1020227009330 A KR 1020227009330A KR 20227009330 A KR20227009330 A KR 20227009330A KR 102674947 B1 KR102674947 B1 KR 102674947B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- work
- workpiece
- holding hole
- amount
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 112
- 238000000034 method Methods 0.000 title claims abstract description 39
- 230000002093 peripheral effect Effects 0.000 claims description 40
- 230000003746 surface roughness Effects 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000007517 polishing process Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 66
- 238000010586 diagram Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000007665 sagging Methods 0.000 description 3
- 230000007717 exclusion Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2019-177790 | 2019-09-27 | ||
| JP2019177790A JP7200898B2 (ja) | 2019-09-27 | 2019-09-27 | ワークの両面研磨方法 |
| PCT/JP2020/030798 WO2021059790A1 (ja) | 2019-09-27 | 2020-08-13 | ワークの両面研磨方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20220047645A KR20220047645A (ko) | 2022-04-18 |
| KR102674947B1 true KR102674947B1 (ko) | 2024-06-12 |
Family
ID=75166050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020227009330A KR102674947B1 (ko) | 2019-09-27 | 2020-08-13 | 워크의 양면 연마 방법 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP7200898B2 (ja) |
| KR (1) | KR102674947B1 (ja) |
| CN (1) | CN114401823A (ja) |
| DE (1) | DE112020004627T5 (ja) |
| TW (1) | TWI740606B (ja) |
| WO (1) | WO2021059790A1 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7235071B2 (ja) * | 2021-06-11 | 2023-03-08 | 株式会社Sumco | ワークの両面研磨方法及びワークの両面研磨装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001191249A (ja) * | 1999-10-21 | 2001-07-17 | Speedfam Co Ltd | ワークの研磨方法 |
| JP2002331453A (ja) | 2001-05-08 | 2002-11-19 | Shin Etsu Handotai Co Ltd | ウェーハの研磨方法及びウェーハの研磨装置 |
| JP2006156653A (ja) | 2004-11-29 | 2006-06-15 | Toshiba Ceramics Co Ltd | ウェーハ保持体 |
| JP2010253579A (ja) | 2009-04-22 | 2010-11-11 | Sumco Corp | ウェーハの研磨方法および研磨装置 |
| JP2014050913A (ja) | 2012-09-06 | 2014-03-20 | Shin Etsu Handotai Co Ltd | 両面研磨方法 |
| JP2018015877A (ja) | 2016-07-29 | 2018-02-01 | 株式会社Sumco | ウェーハの両面研磨方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002326156A (ja) * | 2001-04-27 | 2002-11-12 | Nippon Sheet Glass Co Ltd | ガラス基板研磨用キャリア及びガラス基板研磨装置 |
| JP2003071703A (ja) * | 2001-09-05 | 2003-03-12 | Seiko Instruments Inc | 多段式微小孔加工方法および装置 |
| JP2005150216A (ja) * | 2003-11-12 | 2005-06-09 | Hitachi Cable Ltd | 半導体ウェハの研磨装置 |
| JP2006198751A (ja) * | 2005-01-24 | 2006-08-03 | Showa Denko Kk | 磁気ディスク用サブストレート基板の製造方法及び研磨装置 |
| KR100746373B1 (ko) * | 2005-12-13 | 2007-08-03 | 주식회사 실트론 | 양면 연마장치의 캐리어 플레이트 구조 |
| JP4904960B2 (ja) * | 2006-07-18 | 2012-03-28 | 信越半導体株式会社 | 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法 |
| JP4605233B2 (ja) * | 2008-02-27 | 2011-01-05 | 信越半導体株式会社 | 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法 |
| JP5212041B2 (ja) * | 2008-11-19 | 2013-06-19 | 信越半導体株式会社 | 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法 |
| DE102011082777A1 (de) * | 2011-09-15 | 2012-02-09 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
| WO2014002467A1 (ja) | 2012-06-25 | 2014-01-03 | 株式会社Sumco | ワークの研磨方法およびワークの研磨装置 |
| JP2014188668A (ja) * | 2013-03-28 | 2014-10-06 | Hoya Corp | ガラス基板の製造方法 |
| WO2017073265A1 (ja) * | 2015-10-30 | 2017-05-04 | 株式会社Sumco | 半導体ウェーハの両面研磨方法及びその両面研磨装置 |
| JP6403100B2 (ja) * | 2016-01-25 | 2018-10-10 | 信越半導体株式会社 | エピタキシャル成長装置及び保持部材 |
| JP6635003B2 (ja) * | 2016-11-02 | 2020-01-22 | 株式会社Sumco | 半導体ウェーハの両面研磨方法 |
| JP6844530B2 (ja) * | 2017-12-28 | 2021-03-17 | 株式会社Sumco | ワークの両面研磨装置および両面研磨方法 |
| JP7046358B2 (ja) * | 2018-04-17 | 2022-04-04 | スピードファム株式会社 | 研磨装置 |
-
2019
- 2019-09-27 JP JP2019177790A patent/JP7200898B2/ja active Active
-
2020
- 2020-08-13 KR KR1020227009330A patent/KR102674947B1/ko active IP Right Grant
- 2020-08-13 CN CN202080067215.9A patent/CN114401823A/zh active Pending
- 2020-08-13 TW TW109127489A patent/TWI740606B/zh active
- 2020-08-13 WO PCT/JP2020/030798 patent/WO2021059790A1/ja active Application Filing
- 2020-08-13 DE DE112020004627.3T patent/DE112020004627T5/de active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001191249A (ja) * | 1999-10-21 | 2001-07-17 | Speedfam Co Ltd | ワークの研磨方法 |
| JP2002331453A (ja) | 2001-05-08 | 2002-11-19 | Shin Etsu Handotai Co Ltd | ウェーハの研磨方法及びウェーハの研磨装置 |
| JP2006156653A (ja) | 2004-11-29 | 2006-06-15 | Toshiba Ceramics Co Ltd | ウェーハ保持体 |
| JP2010253579A (ja) | 2009-04-22 | 2010-11-11 | Sumco Corp | ウェーハの研磨方法および研磨装置 |
| JP2014050913A (ja) | 2012-09-06 | 2014-03-20 | Shin Etsu Handotai Co Ltd | 両面研磨方法 |
| JP2018015877A (ja) | 2016-07-29 | 2018-02-01 | 株式会社Sumco | ウェーハの両面研磨方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021059790A1 (ja) | 2021-04-01 |
| DE112020004627T5 (de) | 2022-09-01 |
| JP7200898B2 (ja) | 2023-01-10 |
| JP2021053726A (ja) | 2021-04-08 |
| TW202112494A (zh) | 2021-04-01 |
| TWI740606B (zh) | 2021-09-21 |
| KR20220047645A (ko) | 2022-04-18 |
| CN114401823A (zh) | 2022-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101565026B1 (ko) | 양면 연마 장치용 캐리어 및 이를 이용한 양면 연마 장치, 및 양면 연마 방법 | |
| US9033764B2 (en) | Method of polishing object to be polished | |
| JP5896884B2 (ja) | 両面研磨方法 | |
| EP1852900B1 (en) | Carrier for double side polishing machine and double side polishing machine employing it, and double side polishing method | |
| CN109475996B (zh) | 晶片的双面研磨方法 | |
| US20120248578A1 (en) | Semiconductor wafer and method of producing the same | |
| US20080166952A1 (en) | Carrier For Double-Side Polishing Apparatus, Double-Side Polishing Apparatus And Double-Side Polishing Method Using The Same | |
| CN110193776B (zh) | 晶圆抛光的抛光压力控制方法、装置和设备 | |
| US8952496B2 (en) | Semiconductor wafer and method of producing same | |
| CN102157157B (zh) | 磁记录介质用玻璃基板及其制造方法 | |
| KR102674947B1 (ko) | 워크의 양면 연마 방법 | |
| US11453098B2 (en) | Carrier for double-side polishing apparatus, double-side polishing apparatus, and double-side polishing method | |
| US9981361B2 (en) | Apparatus for dressing urethane foam pad for use in polishing | |
| JP2012129416A (ja) | 半導体ウェーハ及びその製造方法 | |
| CN102886730A (zh) | 磁记录介质用玻璃基板的制造方法和磁记录介质用玻璃基板 | |
| US20040195657A1 (en) | Semiconductor wafer | |
| JP2019186490A (ja) | キャリア、キャリアの製造方法、キャリアの評価方法および半導体ウェーハの研磨方法 | |
| KR100931787B1 (ko) | 양면 연마 공정에서 웨이퍼의 평탄도를 제어하는 방법 | |
| US20230047412A1 (en) | Systems and methods for processing semiconductor wafers using front-end processed wafer edge geometry metrics | |
| KR100927306B1 (ko) | 나노토포그라피가 개선된 웨이퍼 제조 방법 | |
| TW202406674A (zh) | 晶圓的單面拋光方法、晶圓的製造方法、及晶圓的單面拋光裝置 | |
| KR20230165236A (ko) | 웨이퍼 가공 방법 및 웨이퍼 | |
| Qin et al. | Simultaneous Double-Side Grinding of Silicon Wafers: A Review and Analysis of Experimental Investigations |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant |