KR102654332B1 - 발광 장치의 제조 방법 및 발광 장치 - Google Patents
발광 장치의 제조 방법 및 발광 장치 Download PDFInfo
- Publication number
- KR102654332B1 KR102654332B1 KR1020190073716A KR20190073716A KR102654332B1 KR 102654332 B1 KR102654332 B1 KR 102654332B1 KR 1020190073716 A KR1020190073716 A KR 1020190073716A KR 20190073716 A KR20190073716 A KR 20190073716A KR 102654332 B1 KR102654332 B1 KR 102654332B1
- Authority
- KR
- South Korea
- Prior art keywords
- light
- reflective layer
- resin
- concave portion
- emitting element
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 229920005989 resin Polymers 0.000 claims abstract description 179
- 239000011347 resin Substances 0.000 claims abstract description 179
- 239000000463 material Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 35
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 31
- 230000008569 process Effects 0.000 claims abstract description 25
- 239000002245 particle Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000004382 potting Methods 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 230000001376 precipitating effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 43
- 239000003822 epoxy resin Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 229920002050 silicone resin Polymers 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000009826 distribution Methods 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000009194 climbing Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- GTDCAOYDHVNFCP-UHFFFAOYSA-N chloro(trihydroxy)silane Chemical compound O[Si](O)(O)Cl GTDCAOYDHVNFCP-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- -1 or Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020240042613A KR20240049228A (ko) | 2018-06-29 | 2024-03-28 | 발광 장치의 제조 방법 및 발광 장치 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2018-124545 | 2018-06-29 | ||
| JP2018124545 | 2018-06-29 | ||
| JP2019055625A JP6852745B2 (ja) | 2018-06-29 | 2019-03-22 | 発光装置の製造方法および発光装置 |
| JPJP-P-2019-055625 | 2019-03-22 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020240042613A Division KR20240049228A (ko) | 2018-06-29 | 2024-03-28 | 발광 장치의 제조 방법 및 발광 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200002619A KR20200002619A (ko) | 2020-01-08 |
| KR102654332B1 true KR102654332B1 (ko) | 2024-04-02 |
Family
ID=69152266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020190073716A KR102654332B1 (ko) | 2018-06-29 | 2019-06-20 | 발광 장치의 제조 방법 및 발광 장치 |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP6852745B2 (ja) |
| KR (1) | KR102654332B1 (ja) |
| BR (1) | BR112020024510A2 (ja) |
| TW (1) | TWI819015B (ja) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016072412A (ja) * | 2014-09-30 | 2016-05-09 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
| JP2017098470A (ja) * | 2015-11-27 | 2017-06-01 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| JP2017117867A (ja) * | 2015-12-22 | 2017-06-29 | 日亜化学工業株式会社 | 発光装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3775081B2 (ja) * | 1998-11-27 | 2006-05-17 | 松下電器産業株式会社 | 半導体発光装置 |
| JP3655267B2 (ja) * | 2002-07-17 | 2005-06-02 | 株式会社東芝 | 半導体発光装置 |
| JP5102051B2 (ja) | 2007-01-18 | 2012-12-19 | シチズン電子株式会社 | 半導体発光装置 |
| JP2008258284A (ja) * | 2007-04-02 | 2008-10-23 | Toyoda Gosei Co Ltd | Ｌｅｄ発光表示装置 |
| JP2010141058A (ja) | 2008-12-10 | 2010-06-24 | Toyoda Gosei Co Ltd | 発光装置 |
| KR20100080423A (ko) | 2008-12-30 | 2010-07-08 | 삼성엘이디 주식회사 | 발광소자 패키지 및 그 제조방법 |
| JP5861636B2 (ja) * | 2010-08-31 | 2016-02-16 | 日亜化学工業株式会社 | 発光装置とその製造方法 |
| KR101723541B1 (ko) * | 2010-11-03 | 2017-04-05 | 엘지이노텍 주식회사 | 발광소자 어레이 및 이를 포함하는 표시장치 |
| CN102683542B (zh) * | 2011-03-15 | 2014-12-10 | 展晶科技(深圳)有限公司 | Led封装结构 |
| JP2012243846A (ja) | 2011-05-17 | 2012-12-10 | Sumitomo Chemical Co Ltd | 金属ベース回路基板および発光素子 |
| JP2014082453A (ja) * | 2012-09-25 | 2014-05-08 | Toyoda Gosei Co Ltd | 発光装置の製造方法 |
| CN105789418A (zh) | 2014-12-18 | 2016-07-20 | 惠州市华瑞光源科技有限公司 | 胶状物及发光二极管封装结构 |
| JP6332342B2 (ja) * | 2015-08-20 | 2018-05-30 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
| JP6447557B2 (ja) * | 2016-03-24 | 2019-01-09 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| JP6668996B2 (ja) * | 2016-07-29 | 2020-03-18 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| US10121945B2 (en) * | 2016-12-16 | 2018-11-06 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
-
2019
- 2019-03-22 JP JP2019055625A patent/JP6852745B2/ja active Active
- 2019-05-15 BR BR112020024510-0A patent/BR112020024510A2/pt unknown
- 2019-06-20 KR KR1020190073716A patent/KR102654332B1/ko active IP Right Grant
- 2019-06-27 TW TW108122633A patent/TWI819015B/zh active
-
2021
- 2021-03-10 JP JP2021038412A patent/JP7112007B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016072412A (ja) * | 2014-09-30 | 2016-05-09 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
| JP2017098470A (ja) * | 2015-11-27 | 2017-06-01 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| JP2017117867A (ja) * | 2015-12-22 | 2017-06-29 | 日亜化学工業株式会社 | 発光装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2020010013A (ja) | 2020-01-16 |
| TWI819015B (zh) | 2023-10-21 |
| JP7112007B2 (ja) | 2022-08-03 |
| JP6852745B2 (ja) | 2021-03-31 |
| KR20200002619A (ko) | 2020-01-08 |
| BR112020024510A2 (pt) | 2021-03-02 |
| TW202015258A (zh) | 2020-04-16 |
| JP2021090077A (ja) | 2021-06-10 |
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| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant |