KR102587161B1 - 반도체 패키지 - Google Patents

반도체 패키지 Download PDF

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KR102587161B1
KR102587161B1 KR1020220072782A KR20220072782A KR102587161B1 KR 102587161 B1 KR102587161 B1 KR 102587161B1 KR 1020220072782 A KR1020220072782 A KR 1020220072782A KR 20220072782 A KR20220072782 A KR 20220072782A KR 102587161 B1 KR102587161 B1 KR 102587161B1
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South Korea
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insulating layer
protective layer
substrate
electrode
semiconductor package
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KR1020220072782A
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English (en)
Korean (ko)
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유호돌
엄성운
이용수
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엘지이노텍 주식회사
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Priority to KR1020220072782A priority Critical patent/KR102587161B1/ko
Priority to US18/138,180 priority patent/US20230411268A1/en
Priority to JP2023093369A priority patent/JP2023183389A/ja
Priority to TW112122056A priority patent/TW202406041A/zh
Priority to CN202310708059.5A priority patent/CN117238859A/zh
Priority to KR1020230096986A priority patent/KR102705985B1/ko
Application granted granted Critical
Publication of KR102587161B1 publication Critical patent/KR102587161B1/ko
Priority to KR1020240121842A priority patent/KR102888078B1/ko
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    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06568—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices decreasing in size, e.g. pyramidical stack
    • H—ELECTRICITY
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    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H—ELECTRICITY
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    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • H—ELECTRICITY
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    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1041—Special adaptations for top connections of the lowermost container, e.g. redistribution layer, integral interposer
    • H—ELECTRICITY
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    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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    • H01L2924/38—Effects and problems related to the device integration
    • H01L2924/384—Bump effects
    • H01L2924/3841—Solder bridging

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
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  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structure Of Printed Boards (AREA)
  • Solid State Image Pick-Up Elements (AREA)
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US18/138,180 US20230411268A1 (en) 2022-06-15 2023-04-24 Semiconductor package
JP2023093369A JP2023183389A (ja) 2022-06-15 2023-06-06 半導体パッケージ
TW112122056A TW202406041A (zh) 2022-06-15 2023-06-13 半導體封裝件
CN202310708059.5A CN117238859A (zh) 2022-06-15 2023-06-14 半导体封装
KR1020230096986A KR102705985B1 (ko) 2022-06-15 2023-07-25 회로 기판 및 이를 포함하는 반도체 패키지
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WO2025080108A1 (ko) * 2023-10-13 2025-04-17 주성엔지니어링(주) 기판 처리 방법, 기판 처리 장치 및 반도체 장치
WO2025150970A1 (ko) * 2024-01-10 2025-07-17 엘지이노텍 주식회사 회로 기판 및 이를 포함하는 반도체 패키지

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US20230420357A1 (en) * 2022-06-24 2023-12-28 Intel Corporation Silicon nitride layer under a copper pad
TWI888014B (zh) * 2024-02-17 2025-06-21 威鋒電子股份有限公司 電路板及電子總成

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KR20180020255A (ko) * 2015-06-25 2018-02-27 인텔 코포레이션 패키지 온 패키지를 위한 리세싱된 전도성 컨택들을 갖는 집적 회로 구조체들
KR20180028790A (ko) * 2016-09-09 2018-03-19 삼성전자주식회사 FOWLP 형태의 반도체 패키지 및 이를 가지는 PoP 형태의 반도체 패키지
KR102110332B1 (ko) * 2013-09-27 2020-05-14 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
KR20210043103A (ko) * 2019-10-11 2021-04-21 삼성전자주식회사 반도체 패키지

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KR20180020255A (ko) * 2015-06-25 2018-02-27 인텔 코포레이션 패키지 온 패키지를 위한 리세싱된 전도성 컨택들을 갖는 집적 회로 구조체들
KR20180028790A (ko) * 2016-09-09 2018-03-19 삼성전자주식회사 FOWLP 형태의 반도체 패키지 및 이를 가지는 PoP 형태의 반도체 패키지
KR20210043103A (ko) * 2019-10-11 2021-04-21 삼성전자주식회사 반도체 패키지

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WO2025080108A1 (ko) * 2023-10-13 2025-04-17 주성엔지니어링(주) 기판 처리 방법, 기판 처리 장치 및 반도체 장치
WO2025150970A1 (ko) * 2024-01-10 2025-07-17 엘지이노텍 주식회사 회로 기판 및 이를 포함하는 반도체 패키지

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