KR102561427B1 - 폴리스티렌-b-폴리(메틸 메타크릴레이트) 이블록 공중합체 및 이의 배합물의 콘택홀 자기 조립을 위한 고속 가교성 중성 하지층 - Google Patents

폴리스티렌-b-폴리(메틸 메타크릴레이트) 이블록 공중합체 및 이의 배합물의 콘택홀 자기 조립을 위한 고속 가교성 중성 하지층 Download PDF

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KR102561427B1
KR102561427B1 KR1020217018565A KR20217018565A KR102561427B1 KR 102561427 B1 KR102561427 B1 KR 102561427B1 KR 1020217018565 A KR1020217018565 A KR 1020217018565A KR 20217018565 A KR20217018565 A KR 20217018565A KR 102561427 B1 KR102561427 B1 KR 102561427B1
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두라이라즈 바스카란
엠디 에스. 라만
빅터 몬리얼
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메르크 파텐트 게엠베하
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/12Esters of monohydric alcohols or phenols
    • C08F220/14Methyl esters, e.g. methyl (meth)acrylate
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    • C09D133/00Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04Homopolymers or copolymers of esters
    • C09D133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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    • C09D133/068Copolymers with monomers not covered by C09D133/06 containing glycidyl groups
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    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
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    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
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    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
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    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
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    • C09D125/00Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
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    • C09D133/00Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04Homopolymers or copolymers of esters
    • C09D133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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    • C09D5/00Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/008Temporary coatings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
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    • C08F2800/00Copolymer characterised by the proportions of the comonomers expressed
    • C08F2800/10Copolymer characterised by the proportions of the comonomers expressed as molar percentages

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Formation Of Insulating Films (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Graft Or Block Polymers (AREA)
KR1020217018565A 2018-12-07 2019-12-04 폴리스티렌-b-폴리(메틸 메타크릴레이트) 이블록 공중합체 및 이의 배합물의 콘택홀 자기 조립을 위한 고속 가교성 중성 하지층 Active KR102561427B1 (ko)

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US201862776802P 2018-12-07 2018-12-07
US62/776,802 2018-12-07
PCT/EP2019/083589 WO2020115090A1 (en) 2018-12-07 2019-12-04 Rapid cross-linkable neutral underlayers for contact hole self-assembly of polystyrene-b- poly(methyl methacrylate) diblock copolymers and their formulation thereof

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KR20210100116A KR20210100116A (ko) 2021-08-13
KR102561427B1 true KR102561427B1 (ko) 2023-07-28

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US (1) US12559644B2 (https=)
EP (1) EP3891198B1 (https=)
JP (1) JP7269346B2 (https=)
KR (1) KR102561427B1 (https=)
CN (1) CN113490696B (https=)
SG (1) SG11202103809PA (https=)
TW (1) TWI772720B (https=)
WO (1) WO2020115090A1 (https=)

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SG11202103809PA (en) 2018-12-07 2021-05-28 Merck Patent Gmbh Rapid cross-linkable neutral underlayers for contact hole self-assembly of polystyrene-b- poly(methyl methacrylate) diblock copolymers and their formulation thereof
WO2022243216A1 (en) * 2021-05-18 2022-11-24 Merck Patent Gmbh Hydrophobic crosslinkable pinning underlayers with improved dry etch capabilities for patterning directed self-assembly of ps-b-pmma type block copolymers
KR20250004089A (ko) * 2022-05-03 2025-01-07 메르크 파텐트 게엠베하 이블록 공중합체의 유도 자기 조립을 위한 SiARC 기판 상용성을 개선하기 위한 히드록실 단량체를 함유하는 신규한 중성 매트의 개발
CN117331279A (zh) * 2022-06-23 2024-01-02 华为技术有限公司 感光树脂组合物、膜材、含苯并环丁烯结构的环氧化合物及其应用

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