JP7269346B2 - ポリスチレン-b-ポリ(メチルメタクリレート)ジブロックコポリマーのコンタクトホール自己集合のための高速架橋可能な中性下層及びそれらの調合物 - Google Patents

ポリスチレン-b-ポリ(メチルメタクリレート)ジブロックコポリマーのコンタクトホール自己集合のための高速架橋可能な中性下層及びそれらの調合物 Download PDF

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JP7269346B2
JP7269346B2 JP2021531967A JP2021531967A JP7269346B2 JP 7269346 B2 JP7269346 B2 JP 7269346B2 JP 2021531967 A JP2021531967 A JP 2021531967A JP 2021531967 A JP2021531967 A JP 2021531967A JP 7269346 B2 JP7269346 B2 JP 7269346B2
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random copolymer
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バスカラン・ドゥライラジュ
ラーマン・エムディー・エス
モンリアル・ヴィクター
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Merck Patent GmbH
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    • C09D133/00Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
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    • C09D133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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    • C09D133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
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    • C08F2800/00Copolymer characterised by the proportions of the comonomers expressed
    • C08F2800/10Copolymer characterised by the proportions of the comonomers expressed as molar percentages

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Formation Of Insulating Films (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Graft Or Block Polymers (AREA)
JP2021531967A 2018-12-07 2019-12-04 ポリスチレン-b-ポリ(メチルメタクリレート)ジブロックコポリマーのコンタクトホール自己集合のための高速架橋可能な中性下層及びそれらの調合物 Active JP7269346B2 (ja)

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US201862776802P 2018-12-07 2018-12-07
US62/776,802 2018-12-07
PCT/EP2019/083589 WO2020115090A1 (en) 2018-12-07 2019-12-04 Rapid cross-linkable neutral underlayers for contact hole self-assembly of polystyrene-b- poly(methyl methacrylate) diblock copolymers and their formulation thereof

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JP2022510681A JP2022510681A (ja) 2022-01-27
JP2022510681A5 JP2022510681A5 (https=) 2022-12-01
JP7269346B2 true JP7269346B2 (ja) 2023-05-08

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US (1) US12559644B2 (https=)
EP (1) EP3891198B1 (https=)
JP (1) JP7269346B2 (https=)
KR (1) KR102561427B1 (https=)
CN (1) CN113490696B (https=)
SG (1) SG11202103809PA (https=)
TW (1) TWI772720B (https=)
WO (1) WO2020115090A1 (https=)

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Publication number Priority date Publication date Assignee Title
SG11202103809PA (en) 2018-12-07 2021-05-28 Merck Patent Gmbh Rapid cross-linkable neutral underlayers for contact hole self-assembly of polystyrene-b- poly(methyl methacrylate) diblock copolymers and their formulation thereof
WO2022243216A1 (en) * 2021-05-18 2022-11-24 Merck Patent Gmbh Hydrophobic crosslinkable pinning underlayers with improved dry etch capabilities for patterning directed self-assembly of ps-b-pmma type block copolymers
KR20250004089A (ko) * 2022-05-03 2025-01-07 메르크 파텐트 게엠베하 이블록 공중합체의 유도 자기 조립을 위한 SiARC 기판 상용성을 개선하기 위한 히드록실 단량체를 함유하는 신규한 중성 매트의 개발
CN117331279A (zh) * 2022-06-23 2024-01-02 华为技术有限公司 感光树脂组合物、膜材、含苯并环丁烯结构的环氧化合物及其应用

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