KR102539241B1 - Tsv/mems/전력 장치 식각용 화학품 - Google Patents

Tsv/mems/전력 장치 식각용 화학품 Download PDF

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KR102539241B1
KR102539241B1 KR1020227030041A KR20227030041A KR102539241B1 KR 102539241 B1 KR102539241 B1 KR 102539241B1 KR 1020227030041 A KR1020227030041 A KR 1020227030041A KR 20227030041 A KR20227030041 A KR 20227030041A KR 102539241 B1 KR102539241 B1 KR 102539241B1
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etching
fluid
silicon
hydrogen
aspect ratio
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KR20220124825A (ko
Inventor
펑 셴
크리스티안 뒤사랫
커티스 앤더슨
라훌 굽타
빈센트 엠. 오마르지
네이던 스태포드
Original Assignee
레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드
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Priority to KR1020237017666A priority Critical patent/KR102679289B1/ko
Publication of KR20220124825A publication Critical patent/KR20220124825A/ko
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    • H01L21/30655—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
KR1020227030041A 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품 Active KR102539241B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237017666A KR102679289B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462013959P 2014-06-18 2014-06-18
US62/013,959 2014-06-18
PCT/JP2015/003044 WO2015194178A1 (en) 2014-06-18 2015-06-17 Chemistries for tsv/mems/power device etching
KR1020177000840A KR102444697B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

Related Parent Applications (1)

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KR20220124825A KR20220124825A (ko) 2022-09-14
KR102539241B1 true KR102539241B1 (ko) 2023-06-01

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KR1020227030041A Active KR102539241B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품
KR1020177000840A Active KR102444697B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품
KR1020237017666A Active KR102679289B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

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KR1020237017666A Active KR102679289B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

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US (3) US9892932B2 (https=)
EP (1) EP3158579A4 (https=)
JP (1) JP6485972B2 (https=)
KR (3) KR102539241B1 (https=)
CN (2) CN106663624B (https=)
SG (1) SG11201610342YA (https=)
TW (3) TWI658509B (https=)
WO (1) WO2015194178A1 (https=)

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KR102388963B1 (ko) * 2020-05-07 2022-04-20 아주대학교산학협력단 퍼플루오로프로필카비놀(Perfluoropropyl carbinol)을 이용한 플라즈마 식각 방법
KR102244862B1 (ko) * 2020-08-04 2021-04-27 (주)원익머트리얼즈 식각 가스 혼합물과 이를 이용한 패턴 형성 방법
KR20230079304A (ko) * 2020-10-05 2023-06-07 에스피피 테크놀로지스 컴퍼니 리미티드 플라스마 처리용 가스, 플라스마 처리 방법 및 플라스마 처리 장치
KR102924126B1 (ko) * 2020-10-15 2026-02-06 가부시끼가이샤 레조낙 플루오로-2-부텐의 보관 방법
KR102924118B1 (ko) * 2020-10-15 2026-02-09 가부시끼가이샤 레조낙 플루오로부텐의 보관 방법
CN116325088A (zh) * 2020-10-15 2023-06-23 株式会社力森诺科 蚀刻气体及其制造方法、以及蚀刻方法、半导体元件的制造方法
JPWO2022080275A1 (https=) * 2020-10-15 2022-04-21
CN116472258A (zh) * 2020-10-15 2023-07-21 株式会社力森诺科 氟-2-丁烯的保存方法
WO2022210043A1 (ja) * 2021-03-30 2022-10-06 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP7700221B2 (ja) * 2021-05-07 2025-06-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2022234643A1 (ja) 2021-05-07 2022-11-10 東京エレクトロン株式会社 エッチング方法及びエッチング装置
TWI906294B (zh) * 2021-05-07 2025-12-01 日商東京威力科創股份有限公司 蝕刻方法及蝕刻裝置
WO2025182815A1 (ja) * 2024-02-27 2025-09-04 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物
TW202548079A (zh) 2024-03-01 2025-12-16 日商大金工業股份有限公司 沉積氣體
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SG11201610342YA (en) 2017-01-27
CN106663624A (zh) 2017-05-10
EP3158579A1 (en) 2017-04-26
KR102679289B1 (ko) 2024-06-27
TWI695423B (zh) 2020-06-01
JP6485972B2 (ja) 2019-03-20
KR102444697B1 (ko) 2022-09-16
US10720335B2 (en) 2020-07-21
TW201606867A (zh) 2016-02-16
KR20170020434A (ko) 2017-02-22
US20180366336A1 (en) 2018-12-20
CN111816559B (zh) 2024-06-11
KR20220124825A (ko) 2022-09-14
US20180076046A1 (en) 2018-03-15
TW202030312A (zh) 2020-08-16
CN106663624B (zh) 2020-08-14
CN111816559A (zh) 2020-10-23
EP3158579A4 (en) 2018-02-21
US20170103901A1 (en) 2017-04-13
TW201929071A (zh) 2019-07-16
US9892932B2 (en) 2018-02-13
JP2017518645A (ja) 2017-07-06
WO2015194178A1 (en) 2015-12-23
KR20230079491A (ko) 2023-06-07
TWI733431B (zh) 2021-07-11
TWI658509B (zh) 2019-05-01
US10103031B2 (en) 2018-10-16

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