KR102533979B1 - 단결정 제조 장치 및 단결정의 제조 방법 - Google Patents

단결정 제조 장치 및 단결정의 제조 방법 Download PDF

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Publication number
KR102533979B1
KR102533979B1 KR1020210106089A KR20210106089A KR102533979B1 KR 102533979 B1 KR102533979 B1 KR 102533979B1 KR 1020210106089 A KR1020210106089 A KR 1020210106089A KR 20210106089 A KR20210106089 A KR 20210106089A KR 102533979 B1 KR102533979 B1 KR 102533979B1
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KR
South Korea
Prior art keywords
gap
single crystal
measurement value
value
melt
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KR1020210106089A
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English (en)
Korean (ko)
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KR20220030882A (ko
Inventor
잇페이 시모자키
Original Assignee
가부시키가이샤 사무코
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Publication of KR20220030882A publication Critical patent/KR20220030882A/ko
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Publication of KR102533979B1 publication Critical patent/KR102533979B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020210106089A 2020-09-03 2021-08-11 단결정 제조 장치 및 단결정의 제조 방법 KR102533979B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020148041A JP7342822B2 (ja) 2020-09-03 2020-09-03 単結晶製造装置及び単結晶の製造方法
JPJP-P-2020-148041 2020-09-03

Publications (2)

Publication Number Publication Date
KR20220030882A KR20220030882A (ko) 2022-03-11
KR102533979B1 true KR102533979B1 (ko) 2023-05-17

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Country Status (4)

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JP (1) JP7342822B2 (zh)
KR (1) KR102533979B1 (zh)
CN (1) CN114134559B (zh)
TW (1) TWI762268B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117782332B (zh) * 2024-02-26 2024-04-26 宝鸡鼎晟真空热技术有限公司 一种全自动真空熔炼智能监测方法及系统

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4929817B2 (ja) * 2006-04-25 2012-05-09 信越半導体株式会社 基準反射体と融液面との距離の測定方法、及びこれを用いた融液面位置の制御方法、並びにシリコン単結晶の製造装置
KR101105588B1 (ko) * 2009-03-12 2012-01-17 주식회사 엘지실트론 고품질 실리콘 단결정 제조 방법 및 장치
US8545623B2 (en) * 2009-06-18 2013-10-01 Sumco Phoenix Corporation Method and apparatus for controlling the growth process of a monocrystalline silicon ingot
JP5708171B2 (ja) 2010-04-26 2015-04-30 株式会社Sumco シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法
JP5577873B2 (ja) * 2010-06-16 2014-08-27 信越半導体株式会社 遮熱部材下端面と原料融液面との間の距離の測定方法、遮熱部材下端面と原料融液面との間の距離の制御方法、シリコン単結晶の製造方法
JP5678635B2 (ja) 2010-12-13 2015-03-04 株式会社Sumco シリコン単結晶の製造装置、シリコン単結晶の製造方法
JP5664573B2 (ja) 2012-02-21 2015-02-04 信越半導体株式会社 シリコン融液面の高さ位置の算出方法およびシリコン単結晶の引上げ方法ならびにシリコン単結晶引上げ装置
JP6078974B2 (ja) * 2012-04-04 2017-02-15 株式会社Sumco シリコン単結晶の製造方法
JP6256284B2 (ja) * 2014-10-08 2018-01-10 信越半導体株式会社 遮熱部材下端面と原料融液面との間の距離の測定方法及びシリコン単結晶の製造方法
JP2016121023A (ja) 2014-12-24 2016-07-07 株式会社Sumco 単結晶の製造方法
JP6477356B2 (ja) * 2015-08-21 2019-03-06 株式会社Sumco 単結晶の製造方法および製造装置
JP6519422B2 (ja) * 2015-09-15 2019-05-29 株式会社Sumco 単結晶の製造方法および装置
JP6536345B2 (ja) * 2015-10-14 2019-07-03 信越半導体株式会社 単結晶製造装置及び融液面位置の制御方法
JP6465008B2 (ja) * 2015-12-07 2019-02-06 株式会社Sumco シリコン単結晶の製造方法
JP6627739B2 (ja) 2016-12-20 2020-01-08 株式会社Sumco 単結晶の製造方法
JP6729470B2 (ja) * 2017-04-14 2020-07-22 株式会社Sumco 単結晶の製造方法及び装置
JP6885301B2 (ja) * 2017-11-07 2021-06-09 株式会社Sumco 単結晶の製造方法及び装置
WO2020039553A1 (ja) * 2018-08-23 2020-02-27 株式会社Sumco シリコン単結晶の育成方法

Also Published As

Publication number Publication date
KR20220030882A (ko) 2022-03-11
TW202210666A (zh) 2022-03-16
JP7342822B2 (ja) 2023-09-12
TWI762268B (zh) 2022-04-21
CN114134559A (zh) 2022-03-04
CN114134559B (zh) 2023-10-31
JP2022042592A (ja) 2022-03-15

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