KR102520523B1 - 웨이퍼의 가공 방법 - Google Patents

웨이퍼의 가공 방법 Download PDF

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Publication number
KR102520523B1
KR102520523B1 KR1020207033283A KR20207033283A KR102520523B1 KR 102520523 B1 KR102520523 B1 KR 102520523B1 KR 1020207033283 A KR1020207033283 A KR 1020207033283A KR 20207033283 A KR20207033283 A KR 20207033283A KR 102520523 B1 KR102520523 B1 KR 102520523B1
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South Korea
Prior art keywords
wafer
cutting line
tape
grinding
back side
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KR1020207033283A
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English (en)
Korean (ko)
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KR20200133022A (ko
Inventor
료스케 가타오카
다카시 다모가미
슈헤이 오시다
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가부시키가이샤 도교 세이미쓰
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H01L21/78—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H01L21/304—
    • H01L21/6836—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6542—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by using coherent radiation, e.g. using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H10P72/7404—Wafer tapes, e.g. grinding or dicing support tapes the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020207033283A 2017-11-06 2018-10-29 웨이퍼의 가공 방법 Active KR102520523B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2017-213724 2017-11-06
JP2017213724A JP7157301B2 (ja) 2017-11-06 2017-11-06 ウェーハの加工方法
PCT/JP2018/040067 WO2019088011A1 (ja) 2017-11-06 2018-10-29 ウェーハの加工方法
KR1020207012050A KR20200049878A (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020207012050A Division KR20200049878A (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법

Publications (2)

Publication Number Publication Date
KR20200133022A KR20200133022A (ko) 2020-11-25
KR102520523B1 true KR102520523B1 (ko) 2023-04-12

Family

ID=66331719

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020207033283A Active KR102520523B1 (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법
KR1020207012050A Ceased KR20200049878A (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020207012050A Ceased KR20200049878A (ko) 2017-11-06 2018-10-29 웨이퍼의 가공 방법

Country Status (4)

Country Link
US (1) US11075071B2 (https=)
JP (2) JP7157301B2 (https=)
KR (2) KR102520523B1 (https=)
WO (1) WO2019088011A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7460386B2 (ja) * 2020-02-14 2024-04-02 株式会社ディスコ 被加工物の加工方法
JP7824105B2 (ja) * 2022-03-04 2026-03-04 株式会社ディスコ 分割装置及びチップの製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013004583A (ja) * 2011-06-13 2013-01-07 Tokyo Seimitsu Co Ltd 半導体基板の切断方法及び半導体基板の切断装置
JP2014067970A (ja) 2012-09-27 2014-04-17 Disco Abrasive Syst Ltd 表面保護部材および加工方法
JP2014075560A (ja) * 2012-10-05 2014-04-24 Lintec Corp 表面保護シート
JP2014165462A (ja) 2013-02-27 2014-09-08 Lintec Corp 半導体チップの製造方法
JP2015079826A (ja) 2013-10-16 2015-04-23 三星ダイヤモンド工業株式会社 弾性支持板、破断装置及び分断方法
JP2016225375A (ja) 2015-05-27 2016-12-28 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
JP2017017163A (ja) 2015-06-30 2017-01-19 日亜化学工業株式会社 半導体素子の製造方法
JP6119550B2 (ja) 2013-10-16 2017-04-26 三星ダイヤモンド工業株式会社 エキスパンダ、破断装置及び分断方法
JP2017143131A (ja) 2016-02-09 2017-08-17 株式会社ディスコ 被加工物の樹脂被覆方法及び被加工物の加工方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3832353B2 (ja) * 2002-02-15 2006-10-11 松下電器産業株式会社 半導体装置の製造方法
JP3624909B2 (ja) 2002-03-12 2005-03-02 浜松ホトニクス株式会社 レーザ加工方法
TWI326626B (en) * 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
US7241642B2 (en) * 2004-01-30 2007-07-10 Intel Corporation Mounting and dicing process for wafers
JP2007235068A (ja) * 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd ウェーハ加工方法
JP5197037B2 (ja) * 2008-01-30 2013-05-15 株式会社東京精密 バンプが形成されたウェーハを処理するウェーハ処理方法
JP2011054827A (ja) * 2009-09-03 2011-03-17 Fujitsu Semiconductor Ltd 半導体装置の製造方法及び表面保護テープ
JP2012104644A (ja) * 2010-11-10 2012-05-31 Tokyo Seimitsu Co Ltd ウェーハ破断方法およびウェーハ破断装置
JP5824365B2 (ja) 2012-01-16 2015-11-25 三星ダイヤモンド工業株式会社 脆性材料基板のブレイク方法
US9230862B2 (en) * 2013-05-14 2016-01-05 Texas Instruments Incorporated Wafer die separation
JP5637329B1 (ja) * 2013-07-01 2014-12-10 富士ゼロックス株式会社 半導体片の製造方法、半導体片を含む回路基板および画像形成装置
JP6185792B2 (ja) * 2013-08-29 2017-08-23 三星ダイヤモンド工業株式会社 半導体ウエハの分断方法
JP2016040079A (ja) 2014-08-12 2016-03-24 三星ダイヤモンド工業株式会社 脆性材料基板の分断方法及び分断装置
WO2017036512A1 (en) 2015-08-31 2017-03-09 Karl Heinz Priewasser Method of processing wafer and protective sheeting for use in this method
JP2017079291A (ja) * 2015-10-21 2017-04-27 株式会社ディスコ ウエーハの加工方法
JP6574688B2 (ja) * 2015-11-19 2019-09-11 日東電工株式会社 シート状樹脂組成物、積層シート及び半導体装置の製造方法
JP6721325B2 (ja) * 2015-12-14 2020-07-15 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
US10453764B2 (en) * 2016-08-11 2019-10-22 Advanced Semiconductor Engineering, Inc. Molding for large panel fan-out package

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013004583A (ja) * 2011-06-13 2013-01-07 Tokyo Seimitsu Co Ltd 半導体基板の切断方法及び半導体基板の切断装置
JP2014067970A (ja) 2012-09-27 2014-04-17 Disco Abrasive Syst Ltd 表面保護部材および加工方法
JP2014075560A (ja) * 2012-10-05 2014-04-24 Lintec Corp 表面保護シート
JP2014165462A (ja) 2013-02-27 2014-09-08 Lintec Corp 半導体チップの製造方法
JP2015079826A (ja) 2013-10-16 2015-04-23 三星ダイヤモンド工業株式会社 弾性支持板、破断装置及び分断方法
JP6119550B2 (ja) 2013-10-16 2017-04-26 三星ダイヤモンド工業株式会社 エキスパンダ、破断装置及び分断方法
JP2016225375A (ja) 2015-05-27 2016-12-28 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
JP2017017163A (ja) 2015-06-30 2017-01-19 日亜化学工業株式会社 半導体素子の製造方法
JP2017143131A (ja) 2016-02-09 2017-08-17 株式会社ディスコ 被加工物の樹脂被覆方法及び被加工物の加工方法

Also Published As

Publication number Publication date
KR20200049878A (ko) 2020-05-08
JP2022172109A (ja) 2022-11-15
US11075071B2 (en) 2021-07-27
JP7157301B2 (ja) 2022-10-20
US20200266047A1 (en) 2020-08-20
WO2019088011A1 (ja) 2019-05-09
JP2019087604A (ja) 2019-06-06
KR20200133022A (ko) 2020-11-25

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