KR102496458B1 - 기판 처리 장치 및 전자 부품의 제조 방법 - Google Patents

기판 처리 장치 및 전자 부품의 제조 방법 Download PDF

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Publication number
KR102496458B1
KR102496458B1 KR1020180125086A KR20180125086A KR102496458B1 KR 102496458 B1 KR102496458 B1 KR 102496458B1 KR 1020180125086 A KR1020180125086 A KR 1020180125086A KR 20180125086 A KR20180125086 A KR 20180125086A KR 102496458 B1 KR102496458 B1 KR 102496458B1
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South Korea
Prior art keywords
area
gas
substrate
manufacturing
electronic component
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KR1020180125086A
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English (en)
Korean (ko)
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KR20190128976A (ko
Inventor
아라타 와타베
요시코 아베
Original Assignee
캐논 톡키 가부시키가이샤
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Publication of KR20190128976A publication Critical patent/KR20190128976A/ko
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Publication of KR102496458B1 publication Critical patent/KR102496458B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
KR1020180125086A 2018-05-09 2018-10-19 기판 처리 장치 및 전자 부품의 제조 방법 KR102496458B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018090520A JP6595658B1 (ja) 2018-05-09 2018-05-09 電子部品の製造方法
JPJP-P-2018-090520 2018-05-09

Publications (2)

Publication Number Publication Date
KR20190128976A KR20190128976A (ko) 2019-11-19
KR102496458B1 true KR102496458B1 (ko) 2023-02-03

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Family Applications (1)

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KR1020180125086A KR102496458B1 (ko) 2018-05-09 2018-10-19 기판 처리 장치 및 전자 부품의 제조 방법

Country Status (3)

Country Link
JP (1) JP6595658B1 (zh)
KR (1) KR102496458B1 (zh)
CN (1) CN110473758B (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002363744A (ja) 2001-06-04 2002-12-18 Sharp Corp 多層膜製造装置および製造方法
JP2004207708A (ja) 2002-12-10 2004-07-22 Semiconductor Energy Lab Co Ltd プラズマ処理装置及びプラズマ処理方法、並びに薄膜トランジスタの作製方法
JP2006328478A (ja) 2005-05-26 2006-12-07 Sumitomo Metal Mining Co Ltd 巻取式複合真空表面処理装置及びフィルムの表面処理方法
JP2014148736A (ja) 2013-02-04 2014-08-21 Ulvac Japan Ltd 薄型基板処理装置
JP2016072237A (ja) 2014-09-30 2016-05-09 芝浦メカトロニクス株式会社 プラズマ処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0860513A3 (en) * 1997-02-19 2000-01-12 Canon Kabushiki Kaisha Thin film forming apparatus and process for forming thin film using same
JP2012061585A (ja) * 2010-09-17 2012-03-29 Tokyo Electron Ltd 真空処理装置、真空処理方法及び微細加工装置
DE102012100927A1 (de) * 2012-02-06 2013-08-08 Roth & Rau Ag Prozessmodul
JP5887201B2 (ja) * 2012-05-14 2016-03-16 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理プログラム、及び記憶媒体
WO2015172835A1 (en) * 2014-05-15 2015-11-19 Applied Materials, Inc. Apparatus and method for coating a substrate by rotary target assemblies in two coating regions
JP2016108602A (ja) 2014-12-05 2016-06-20 国立大学法人富山大学 複合化膜の成膜装置
JP6966227B2 (ja) * 2016-06-28 2021-11-10 芝浦メカトロニクス株式会社 成膜装置、成膜製品の製造方法及び電子部品の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002363744A (ja) 2001-06-04 2002-12-18 Sharp Corp 多層膜製造装置および製造方法
JP2004207708A (ja) 2002-12-10 2004-07-22 Semiconductor Energy Lab Co Ltd プラズマ処理装置及びプラズマ処理方法、並びに薄膜トランジスタの作製方法
JP2006328478A (ja) 2005-05-26 2006-12-07 Sumitomo Metal Mining Co Ltd 巻取式複合真空表面処理装置及びフィルムの表面処理方法
JP2014148736A (ja) 2013-02-04 2014-08-21 Ulvac Japan Ltd 薄型基板処理装置
JP2016072237A (ja) 2014-09-30 2016-05-09 芝浦メカトロニクス株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
JP6595658B1 (ja) 2019-10-23
JP2019196517A (ja) 2019-11-14
CN110473758A (zh) 2019-11-19
KR20190128976A (ko) 2019-11-19
CN110473758B (zh) 2023-09-08

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