JP6595658B1 - 電子部品の製造方法 - Google Patents

電子部品の製造方法 Download PDF

Info

Publication number
JP6595658B1
JP6595658B1 JP2018090520A JP2018090520A JP6595658B1 JP 6595658 B1 JP6595658 B1 JP 6595658B1 JP 2018090520 A JP2018090520 A JP 2018090520A JP 2018090520 A JP2018090520 A JP 2018090520A JP 6595658 B1 JP6595658 B1 JP 6595658B1
Authority
JP
Japan
Prior art keywords
area
gas
substrate
manufacturing
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018090520A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019196517A (ja
Inventor
新 渡部
可子 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Tokki Corp
Original Assignee
Canon Tokki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Tokki Corp filed Critical Canon Tokki Corp
Priority to JP2018090520A priority Critical patent/JP6595658B1/ja
Priority to KR1020180125086A priority patent/KR102496458B1/ko
Priority to CN201811362771.XA priority patent/CN110473758B/zh
Application granted granted Critical
Publication of JP6595658B1 publication Critical patent/JP6595658B1/ja
Publication of JP2019196517A publication Critical patent/JP2019196517A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
JP2018090520A 2018-05-09 2018-05-09 電子部品の製造方法 Active JP6595658B1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018090520A JP6595658B1 (ja) 2018-05-09 2018-05-09 電子部品の製造方法
KR1020180125086A KR102496458B1 (ko) 2018-05-09 2018-10-19 기판 처리 장치 및 전자 부품의 제조 방법
CN201811362771.XA CN110473758B (zh) 2018-05-09 2018-11-16 基板处理装置以及电子零件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018090520A JP6595658B1 (ja) 2018-05-09 2018-05-09 電子部品の製造方法

Publications (2)

Publication Number Publication Date
JP6595658B1 true JP6595658B1 (ja) 2019-10-23
JP2019196517A JP2019196517A (ja) 2019-11-14

Family

ID=68314161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018090520A Active JP6595658B1 (ja) 2018-05-09 2018-05-09 電子部品の製造方法

Country Status (3)

Country Link
JP (1) JP6595658B1 (zh)
KR (1) KR102496458B1 (zh)
CN (1) CN110473758B (zh)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0860513A3 (en) * 1997-02-19 2000-01-12 Canon Kabushiki Kaisha Thin film forming apparatus and process for forming thin film using same
JP2002363744A (ja) 2001-06-04 2002-12-18 Sharp Corp 多層膜製造装置および製造方法
JP4789412B2 (ja) 2002-12-10 2011-10-12 株式会社半導体エネルギー研究所 プラズマ処理装置
JP4396578B2 (ja) * 2005-05-26 2010-01-13 住友金属鉱山株式会社 巻取式複合真空表面処理装置及びフィルムの表面処理方法
JP2012061585A (ja) * 2010-09-17 2012-03-29 Tokyo Electron Ltd 真空処理装置、真空処理方法及び微細加工装置
DE102012100927A1 (de) * 2012-02-06 2013-08-08 Roth & Rau Ag Prozessmodul
JP5887201B2 (ja) * 2012-05-14 2016-03-16 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理プログラム、及び記憶媒体
JP6022373B2 (ja) * 2013-02-04 2016-11-09 株式会社アルバック 薄型基板処理装置
WO2015172835A1 (en) * 2014-05-15 2015-11-19 Applied Materials, Inc. Apparatus and method for coating a substrate by rotary target assemblies in two coating regions
JP6329110B2 (ja) * 2014-09-30 2018-05-23 芝浦メカトロニクス株式会社 プラズマ処理装置
JP2016108602A (ja) 2014-12-05 2016-06-20 国立大学法人富山大学 複合化膜の成膜装置
JP6966227B2 (ja) * 2016-06-28 2021-11-10 芝浦メカトロニクス株式会社 成膜装置、成膜製品の製造方法及び電子部品の製造方法

Also Published As

Publication number Publication date
KR20190128976A (ko) 2019-11-19
KR102496458B1 (ko) 2023-02-03
JP2019196517A (ja) 2019-11-14
CN110473758A (zh) 2019-11-19
CN110473758B (zh) 2023-09-08

Similar Documents

Publication Publication Date Title
US20210310124A1 (en) Coating by ald for suppressing metallic whiskers
JPH06220627A (ja) 成膜装置
JP2010077508A (ja) 成膜装置及び基板処理装置
JP2007031821A (ja) 真空処理装置
JP2010001565A (ja) スパッタリング装置、それを用いた太陽電池及び画像表示装置の製造方法
JP2012104817A (ja) はんだ上での酸化物の生成を抑制する方法
JP6595658B1 (ja) 電子部品の製造方法
JP4703782B2 (ja) 半導体構成要素、特にソーラーセルの金属裏側コンタクトの製造方法
TW201611172A (zh) 基板處理裝置
JP5731383B2 (ja) 基板処理方法
JP2008047661A (ja) 成膜装置及び半導体装置の製造方法
KR20020029093A (ko) 스퍼터링 프로세스
JP4948088B2 (ja) 半導体製造装置
TWI428463B (zh) Method for manufacturing field effect transistors
JPS6258636A (ja) ドライエツチング方法および装置
JP2009185350A (ja) スパッタ装置及び成膜方法
JP4637556B2 (ja) 成膜装置とこの成膜装置を含む複合型配線膜形成装置および薄膜製造方法
KR20130060010A (ko) 다층 박막 증착 장치
JP6075611B2 (ja) 成膜装置
JP2011222600A (ja) 半導体装置の製造方法及び半導体装置の製造装置
JP2022191403A (ja) 基板の保護
CN116397199A (zh) 多层金属层蒸镀装置及其蒸镀方法
JP2021165432A (ja) 成膜装置、成膜装置の制御装置及び成膜方法
JPH08288219A (ja) 半導体処理装置及び半導体処理方法
JPH03138941A (ja) 半田バンプ形成方法および装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20181026

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20181026

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20181205

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181218

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190215

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190416

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190521

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190722

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190827

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190926

R150 Certificate of patent or registration of utility model

Ref document number: 6595658

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250