JP4703782B2 - 半導体構成要素、特にソーラーセルの金属裏側コンタクトの製造方法 - Google Patents
半導体構成要素、特にソーラーセルの金属裏側コンタクトの製造方法 Download PDFInfo
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- 239000002184 metal Substances 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims description 66
- 238000000151 deposition Methods 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 52
- 230000008021 deposition Effects 0.000 claims description 50
- 238000012545 processing Methods 0.000 claims description 35
- 238000001771 vacuum deposition Methods 0.000 claims description 22
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 3
- 229910006164 NiV Inorganic materials 0.000 claims 1
- 229910001120 nichrome Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 117
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 17
- 238000012216 screening Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 5
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
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- 230000005496 eutectics Effects 0.000 description 1
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- 239000002803 fossil fuel Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/584—Non-reactive treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Condensed Matter Physics & Semiconductors (AREA)
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- Life Sciences & Earth Sciences (AREA)
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- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (16)
- 半導体素子(20)の裏側コンタクト(21)の製造方法であって、
堆積ツール(14、15、16)を有するインライン真空堆積システム(1)においてスパッタリング或いは気相堆積によって基板(22)の裏側に不動態化層(23)及び金属層(24)を順に堆積するステップと、
前記インライン真空堆積システム(1)において、前記基板(22)の前側及び裏側の少なくとも一つに、一つ以上の追加層(25、27、28)を堆積するステップと、
を備えており、
前記不動態化層(23)、前記金属層(24)及び前記追加層(25、27、28)は、真空を中断することなく堆積され、
前記一つ以上の追加層の一層は、Ag、Ni、NiV、NiCr及びCrからなる群から選択される材料の一つ以上の層を備えるはんだ付け可能な層であり、前記金属層(24)の堆積後に、前記裏面に堆積され、
前記金属層は、アルミニウム層であり、前記不動態化層は、SiN:H、SiC:H、SiO 2 :H及びa-Si:Hの群から選択される材料を有する、前記方法。 - 前記基板(22)の裏側に前記層(23、24、25)を堆積する前記堆積ツール(14、15、16)が、前記基板(22)の前側に前記層(27、28)を堆積する前記堆積ツールに対向して、前記真空堆積システム(1)の製品流路に関して配置されており、
前記基板(22)が、キャリヤを通る前記基板(22)のシャドーイングを避けるように、特に前記キャリヤの点状支持体上に置かれる、請求項1に記載の方法。 - 前記基板(22)が、前記堆積ツール(14、15、16)に沿った水平路において実質的に移動され、堆積方向が縦である、請求項1に記載の方法。
- 前記金属層が、0.1μm〜10μmの厚さで堆積される、請求項1に記載の方法。
- 前記金属層(24)を堆積させた後、前記金属層(24)を強いレーザビームで部分的に融解させ、レーザファイヤ接触(LFC)が形成される、請求項1に記載の方法。
- 前記金属層(24)を堆積するステップの後、前記裏側にバリヤ層が堆積される、請求項1に記載の方法。
- 前記金属層(24)を堆積するステップの後、又は前記バリヤ層を堆積するステップの後、前記はんだ付け可能な層(25)が堆積される、請求項6に記載の方法。
- 前記基板(22)の前記裏側の層の堆積中に、前記基板(22)の前記前側に層が堆積される、請求項1に記載の方法。
- 複数の基板が、共通のキャリアに配置され、該複数の基板に一つ以上の層を同時に設ける、請求項1に記載の方法。
- 少なくとも一つの堆積ツール(14、15、16)は、引き出しとして形成される挿入可能な要素(11、12、13)における真空処理チャンバ内に設けられている、請求項1に記載の方法。
- 少なくとも二つのコーティングツールは、引き出しとして形成される挿入可能な要素における真空処理チャンバ内に設けられており、第一堆積ツールが前記基板の前側を向き、第二堆積ツールが前記基板の裏側を向いている、請求項1に記載の方法。
- 前記層の少なくとも一つは、気相堆積され、前記材料が、真空パススルーを通って蒸発器へワイヤとして与えられる、請求項1に記載の方法。
- 前記層の材料の少なくとも一つが、二つの連続する真空チャンバ内の第一蒸発器及び第二蒸発器において蒸発され、
前記材料は、前記第一蒸発器における前記材料が消費されるまで前記第一蒸発器において蒸発され、
次に、前記材料は、インライン真空堆積システムの他の真空処理チャンバにおいて前記気相堆積を中断せずに前記第二蒸発器によって蒸発される、請求項1に記載の方法。 - 前記層(23、25)の少なくとも一つは、一つ以上の回転可能なカソード(14、16)によって、スパッタされる、請求項1に記載の方法。
- カソード数は、前記カソードのスパッタ収率、達成すべき層の厚さ、達成すべき前記真空処理システムのスループットによって選ばれる、請求項14に記載の方法。
- 前記バリア層がWTiを有する、請求項6に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US96894907P | 2007-08-30 | 2007-08-30 | |
EP07017000A EP2031659A1 (de) | 2007-08-30 | 2007-08-30 | Verfahren zur Erzeugung eines metallischen Rückkontaktes eines Halbleiterbauelements, insbesondere einer Solarzelle |
EP07017000.6 | 2007-08-30 | ||
US60/968,949 | 2007-08-30 | ||
PCT/EP2008/006861 WO2009030374A1 (de) | 2007-08-30 | 2008-08-20 | Verfahren zur erzeugung eines metallischen rückkontaktes eines halbleiterbauelements, insbesondere einer solarzelle |
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JP2010537439A JP2010537439A (ja) | 2010-12-02 |
JP4703782B2 true JP4703782B2 (ja) | 2011-06-15 |
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DE102009010816B4 (de) * | 2009-02-27 | 2011-03-10 | Solarworld Innovations Gmbh | Verfahren zur Herstellung eines Halbleiter-Bauelements |
EP2309220A1 (en) | 2009-10-02 | 2011-04-13 | Applied Materials, Inc. | Coating thickness measuring device and method |
DE102011075352A1 (de) * | 2011-05-05 | 2012-11-08 | Solarworld Innovations Gmbh | Verfahren zum Rückseitenkontaktieren einer Silizium-Solarzelle und Silizium-Solarzelle mit einer solchen Rückseitenkontaktierung |
DE102012101456A1 (de) | 2012-02-23 | 2013-08-29 | Schott Solar Ag | Verfahren zum Herstellen einer Solarzelle |
DE102013219560A1 (de) * | 2013-09-27 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photovoltaische Solarzelle und Verfahren zum Herstellen einer metallischen Kontaktierung einer photovoltaischen Solarzelle |
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- 2007-08-30 EP EP07017000A patent/EP2031659A1/de not_active Withdrawn
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2008
- 2008-08-20 JP JP2010522229A patent/JP4703782B2/ja not_active Expired - Fee Related
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JP2010537439A (ja) | 2010-12-02 |
EP2031659A1 (de) | 2009-03-04 |
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