KR102479274B1 - 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 - Google Patents

반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Download PDF

Info

Publication number
KR102479274B1
KR102479274B1 KR1020227001343A KR20227001343A KR102479274B1 KR 102479274 B1 KR102479274 B1 KR 102479274B1 KR 1020227001343 A KR1020227001343 A KR 1020227001343A KR 20227001343 A KR20227001343 A KR 20227001343A KR 102479274 B1 KR102479274 B1 KR 102479274B1
Authority
KR
South Korea
Prior art keywords
film
layer
phase shift
reflective mask
mask blank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227001343A
Other languages
English (en)
Korean (ko)
Other versions
KR20220012412A (ko
Inventor
요헤이 이께베
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20220012412A publication Critical patent/KR20220012412A/ko
Application granted granted Critical
Publication of KR102479274B1 publication Critical patent/KR102479274B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
KR1020227001343A 2016-03-28 2017-03-10 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Active KR102479274B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2016-064269 2016-03-28
JP2016064269A JP6739960B2 (ja) 2016-03-28 2016-03-28 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
PCT/JP2017/009721 WO2017169658A1 (ja) 2016-03-28 2017-03-10 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
KR1020187030286A KR102352732B1 (ko) 2016-03-28 2017-03-10 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020187030286A Division KR102352732B1 (ko) 2016-03-28 2017-03-10 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Publications (2)

Publication Number Publication Date
KR20220012412A KR20220012412A (ko) 2022-02-03
KR102479274B1 true KR102479274B1 (ko) 2022-12-20

Family

ID=59963180

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020227001343A Active KR102479274B1 (ko) 2016-03-28 2017-03-10 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
KR1020187030286A Active KR102352732B1 (ko) 2016-03-28 2017-03-10 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020187030286A Active KR102352732B1 (ko) 2016-03-28 2017-03-10 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Country Status (6)

Country Link
US (1) US10871707B2 (cg-RX-API-DMAC7.html)
JP (1) JP6739960B2 (cg-RX-API-DMAC7.html)
KR (2) KR102479274B1 (cg-RX-API-DMAC7.html)
SG (1) SG11201807251SA (cg-RX-API-DMAC7.html)
TW (2) TWI730071B (cg-RX-API-DMAC7.html)
WO (1) WO2017169658A1 (cg-RX-API-DMAC7.html)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI774375B (zh) 2016-07-27 2022-08-11 美商應用材料股份有限公司 具多層吸收劑的極紫外遮罩坯料及製造方法
US10468149B2 (en) * 2017-02-03 2019-11-05 Globalfoundries Inc. Extreme ultraviolet mirrors and masks with improved reflectivity
WO2018159392A1 (ja) 2017-03-03 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP6861095B2 (ja) 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
TW202511858A (zh) 2018-05-25 2025-03-16 日商Ｈｏｙａ股份有限公司 反射型光罩基底及反射型光罩
KR102692564B1 (ko) * 2018-09-21 2024-08-06 삼성전자주식회사 다층 박막 구조물 및 이를 이용한 위상 변환 소자
TW202026770A (zh) 2018-10-26 2020-07-16 美商應用材料股份有限公司 用於極紫外線掩模吸收劑的ta-cu合金材料
TWI845579B (zh) 2018-12-21 2024-06-21 美商應用材料股份有限公司 極紫外線遮罩吸收器及用於製造的方法
JP7250511B2 (ja) 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
TW202035792A (zh) 2019-01-31 2020-10-01 美商應用材料股份有限公司 極紫外光遮罩吸收體材料
TWI828843B (zh) 2019-01-31 2024-01-11 美商應用材料股份有限公司 極紫外線（ｅｕｖ）遮罩素材及其製造方法
US11249390B2 (en) 2019-01-31 2022-02-15 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US12197120B2 (en) 2019-02-07 2025-01-14 Asml Netherlands B.V. Patterning device and method of use thereof
KR102214777B1 (ko) * 2019-03-18 2021-02-10 한양대학교 산학협력단 극자외선 리소그래피용 마스크, 및 그 제조 방법
JP7401356B2 (ja) * 2019-03-27 2023-12-19 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
TW202104666A (zh) 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
TWI836073B (zh) 2019-05-22 2024-03-21 美商應用材料股份有限公司 極紫外光遮罩坯體及其製造方法
TWI836072B (zh) 2019-05-22 2024-03-21 美商應用材料股份有限公司 具有嵌入吸收層之極紫外光遮罩
TW202104667A (zh) 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TWI845677B (zh) 2019-05-22 2024-06-21 美商應用材料股份有限公司 極紫外光遮罩吸收材料
US11385536B2 (en) 2019-08-08 2022-07-12 Applied Materials, Inc. EUV mask blanks and methods of manufacture
JP6929340B2 (ja) 2019-11-21 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法
WO2021132111A1 (ja) * 2019-12-27 2021-07-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
US11630385B2 (en) 2020-01-24 2023-04-18 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
TW202131087A (zh) 2020-01-27 2021-08-16 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
TWI817073B (zh) 2020-01-27 2023-10-01 美商應用材料股份有限公司 極紫外光遮罩坯體硬遮罩材料
TW202129401A (zh) 2020-01-27 2021-08-01 美商應用材料股份有限公司 極紫外線遮罩坯體硬遮罩材料
TW202141165A (zh) 2020-03-27 2021-11-01 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TWI836207B (zh) 2020-04-17 2024-03-21 美商應用材料股份有限公司 極紫外光遮罩吸收材料
US11300871B2 (en) 2020-04-29 2022-04-12 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US20230143851A1 (en) * 2020-04-30 2023-05-11 Toppan Photomask Co., Ltd. Reflective photomask blank and reflective photomask
KR20210155863A (ko) 2020-06-16 2021-12-24 삼성전자주식회사 극자외선 리소그래피용 위상 반전 마스크 및 이를 이용한 반도체 소자의 제조 방법
TW202202641A (zh) 2020-07-13 2022-01-16 美商應用材料股份有限公司 極紫外線遮罩吸收劑材料
US11609490B2 (en) 2020-10-06 2023-03-21 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11513437B2 (en) 2021-01-11 2022-11-29 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11940725B2 (en) * 2021-01-27 2024-03-26 S&S Tech Co., Ltd. Phase shift blankmask and photomask for EUV lithography
US11592738B2 (en) 2021-01-28 2023-02-28 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
JP7616099B2 (ja) * 2021-03-03 2025-01-17 信越化学工業株式会社 反射型マスクブランク及びその製造方法
JP7640293B2 (ja) * 2021-03-09 2025-03-05 テクセンドフォトマスク株式会社 位相シフトマスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び位相シフトマスクの修正方法
KR20220168108A (ko) * 2021-06-15 2022-12-22 에스케이하이닉스 주식회사 극자외선 리소그래피용 위상 시프트 마스크 및 제조 방법
US12066755B2 (en) * 2021-08-27 2024-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Pellicle for an EUV lithography mask and a method of manufacturing thereof
JPWO2023190696A1 (cg-RX-API-DMAC7.html) * 2022-03-29 2023-10-05
KR102882827B1 (ko) * 2022-10-13 2025-11-07 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009098611A (ja) * 2007-09-26 2009-05-07 Toppan Printing Co Ltd ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクブランク、ハーフトーン型ｅｕｖマスクの製造方法及びパターン転写方法
JP2010080659A (ja) 2008-09-25 2010-04-08 Toppan Printing Co Ltd ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクの製造方法、ハーフトーン型ｅｕｖマスクブランク及びパターン転写方法
JP2015122468A (ja) 2013-12-25 2015-07-02 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
JP2015156494A (ja) 2013-09-18 2015-08-27 Hoya株式会社 反射型マスクブランク及びその製造方法、反射型マスク並びに半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233321B1 (cg-RX-API-DMAC7.html) 1971-07-10 1977-08-27
JP2004207593A (ja) 2002-12-26 2004-07-22 Toppan Printing Co Ltd 極限紫外線露光用マスク及びブランク並びにパターン転写方法
JP2006228766A (ja) 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP5294227B2 (ja) 2006-09-15 2013-09-18 Ｈｏｙａ株式会社 マスクブランク及び転写マスクの製造方法
JP5233321B2 (ja) 2008-02-27 2013-07-10 凸版印刷株式会社 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法
JP2010109336A (ja) 2008-10-04 2010-05-13 Hoya Corp 反射型マスクの製造方法
JP5372455B2 (ja) * 2008-10-04 2013-12-18 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスク、並びにこれらの製造方法
JP5279840B2 (ja) * 2008-11-27 2013-09-04 Ｈｏｙａ株式会社 多層反射膜付基板及び反射型マスクブランク並びに反射型マスクの製造方法
KR102048487B1 (ko) 2012-03-28 2020-01-22 호야 가부시키가이샤 다층 반사막 부착 기판의 제조 방법, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
US9377679B2 (en) * 2012-07-31 2016-06-28 Hoya Corporation Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device
SG10201605473TA (en) * 2012-12-28 2016-09-29 Hoya Corp Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009098611A (ja) * 2007-09-26 2009-05-07 Toppan Printing Co Ltd ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクブランク、ハーフトーン型ｅｕｖマスクの製造方法及びパターン転写方法
JP2010080659A (ja) 2008-09-25 2010-04-08 Toppan Printing Co Ltd ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクの製造方法、ハーフトーン型ｅｕｖマスクブランク及びパターン転写方法
JP2015156494A (ja) 2013-09-18 2015-08-27 Hoya株式会社 反射型マスクブランク及びその製造方法、反射型マスク並びに半導体装置の製造方法
JP2015122468A (ja) 2013-12-25 2015-07-02 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
정시준, ‘Photon Shot Noise Effect in Extreme Ultraviolet Lithography’, 한양대학교 대학원 석사학위논문. (2014.02.28.)

Also Published As

Publication number Publication date
JP2017181571A (ja) 2017-10-05
TWI775442B (zh) 2022-08-21
KR102352732B1 (ko) 2022-01-19
TW201800831A (zh) 2018-01-01
TWI730071B (zh) 2021-06-11
US10871707B2 (en) 2020-12-22
SG11201807251SA (en) 2018-09-27
WO2017169658A1 (ja) 2017-10-05
JP6739960B2 (ja) 2020-08-12
KR20180129838A (ko) 2018-12-05
KR20220012412A (ko) 2022-02-03
US20190079383A1 (en) 2019-03-14
TW202134776A (zh) 2021-09-16

Similar Documents

Publication Publication Date Title
KR102479274B1 (ko) 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
JP6636581B2 (ja) 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP7361027B2 (ja) 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
KR102639087B1 (ko) 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
KR102331865B1 (ko) 반사형 마스크 블랭크 및 반사형 마스크, 및 반도체 장치의 제조 방법
JP6381921B2 (ja) 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
WO2019225737A1 (ja) 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法
JPWO2018135468A1 (ja) 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP7478208B2 (ja) 反射型マスク、並びに反射型マスクブランク及び半導体装置の製造方法
JP6968945B2 (ja) 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP6475400B2 (ja) 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP6441012B2 (ja) 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
KR20220161261A (ko) 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크, 및 반도체 장치의 제조 방법
JP6440996B2 (ja) 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
JP2016046370A5 (cg-RX-API-DMAC7.html)
WO2018159392A1 (ja) 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP6556885B2 (ja) 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 4