JP6739960B2 - 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 - Google Patents

反射型マスクブランク、反射型マスク及び半導体装置の製造方法 Download PDF

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Publication number
JP6739960B2
JP6739960B2 JP2016064269A JP2016064269A JP6739960B2 JP 6739960 B2 JP6739960 B2 JP 6739960B2 JP 2016064269 A JP2016064269 A JP 2016064269A JP 2016064269 A JP2016064269 A JP 2016064269A JP 6739960 B2 JP6739960 B2 JP 6739960B2
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Prior art keywords
film
layer
phase shift
reflective mask
mask blank
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JP2016064269A
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English (en)
Japanese (ja)
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JP2017181571A (ja
JP2017181571A5 (cg-RX-API-DMAC7.html
Inventor
洋平 池邊
洋平 池邊
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Hoya Corp
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Hoya Corp
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Priority to JP2016064269A priority Critical patent/JP6739960B2/ja
Priority to KR1020227001343A priority patent/KR102479274B1/ko
Priority to SG11201807251SA priority patent/SG11201807251SA/en
Priority to PCT/JP2017/009721 priority patent/WO2017169658A1/ja
Priority to KR1020187030286A priority patent/KR102352732B1/ko
Priority to US16/084,698 priority patent/US10871707B2/en
Priority to TW106109866A priority patent/TWI730071B/zh
Priority to TW110118052A priority patent/TWI775442B/zh
Publication of JP2017181571A publication Critical patent/JP2017181571A/ja
Publication of JP2017181571A5 publication Critical patent/JP2017181571A5/ja
Priority to JP2020125052A priority patent/JP6968945B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
JP2016064269A 2016-03-28 2016-03-28 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 Active JP6739960B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2016064269A JP6739960B2 (ja) 2016-03-28 2016-03-28 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
SG11201807251SA SG11201807251SA (en) 2016-03-28 2017-03-10 Reflective mask blank, reflective mask and method of manufacturing semiconductor device
PCT/JP2017/009721 WO2017169658A1 (ja) 2016-03-28 2017-03-10 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
KR1020187030286A KR102352732B1 (ko) 2016-03-28 2017-03-10 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
US16/084,698 US10871707B2 (en) 2016-03-28 2017-03-10 Reflective mask blank, reflective mask and method of manufacturing semiconductor device
KR1020227001343A KR102479274B1 (ko) 2016-03-28 2017-03-10 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
TW106109866A TWI730071B (zh) 2016-03-28 2017-03-24 反射型遮罩基底、反射型遮罩及半導體裝置之製造方法
TW110118052A TWI775442B (zh) 2016-03-28 2017-03-24 反射型遮罩基底、反射型遮罩及半導體裝置之製造方法
JP2020125052A JP6968945B2 (ja) 2016-03-28 2020-07-22 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016064269A JP6739960B2 (ja) 2016-03-28 2016-03-28 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

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JP2020125052A Division JP6968945B2 (ja) 2016-03-28 2020-07-22 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Publications (3)

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JP2017181571A JP2017181571A (ja) 2017-10-05
JP2017181571A5 JP2017181571A5 (cg-RX-API-DMAC7.html) 2019-04-04
JP6739960B2 true JP6739960B2 (ja) 2020-08-12

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Country Status (6)

Country Link
US (1) US10871707B2 (cg-RX-API-DMAC7.html)
JP (1) JP6739960B2 (cg-RX-API-DMAC7.html)
KR (2) KR102479274B1 (cg-RX-API-DMAC7.html)
SG (1) SG11201807251SA (cg-RX-API-DMAC7.html)
TW (2) TWI730071B (cg-RX-API-DMAC7.html)
WO (1) WO2017169658A1 (cg-RX-API-DMAC7.html)

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Publication number Publication date
KR102479274B1 (ko) 2022-12-20
JP2017181571A (ja) 2017-10-05
TWI775442B (zh) 2022-08-21
KR102352732B1 (ko) 2022-01-19
TW201800831A (zh) 2018-01-01
TWI730071B (zh) 2021-06-11
US10871707B2 (en) 2020-12-22
SG11201807251SA (en) 2018-09-27
WO2017169658A1 (ja) 2017-10-05
KR20180129838A (ko) 2018-12-05
KR20220012412A (ko) 2022-02-03
US20190079383A1 (en) 2019-03-14
TW202134776A (zh) 2021-09-16

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