KR102438826B1 - 하전 입자 빔 계측 시스템의 하전 영향들 및 방사 손상을 최소화하기 위한 스캔 전략들 - Google Patents

하전 입자 빔 계측 시스템의 하전 영향들 및 방사 손상을 최소화하기 위한 스캔 전략들 Download PDF

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KR102438826B1
KR102438826B1 KR1020207028710A KR20207028710A KR102438826B1 KR 102438826 B1 KR102438826 B1 KR 102438826B1 KR 1020207028710 A KR1020207028710 A KR 1020207028710A KR 20207028710 A KR20207028710 A KR 20207028710A KR 102438826 B1 KR102438826 B1 KR 102438826B1
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target
overlay
particle beam
charged particle
scan
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KR20200118908A (ko
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홍 시아오
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • H01L21/67242—
    • H01L22/20—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Electromagnetism (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020207028710A 2018-03-07 2019-03-05 하전 입자 빔 계측 시스템의 하전 영향들 및 방사 손상을 최소화하기 위한 스캔 전략들 Active KR102438826B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862639603P 2018-03-07 2018-03-07
US62/639,603 2018-03-07
US15/969,158 2018-05-02
US15/969,158 US10446367B2 (en) 2018-03-07 2018-05-02 Scan strategies to minimize charging effects and radiation damage of charged particle beam metrology system
PCT/US2019/020630 WO2019173252A1 (en) 2018-03-07 2019-03-05 Scan strategies to minimize charging effects and radiation damage of charged particle beam metrology system

Publications (2)

Publication Number Publication Date
KR20200118908A KR20200118908A (ko) 2020-10-16
KR102438826B1 true KR102438826B1 (ko) 2022-08-31

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KR1020207028710A Active KR102438826B1 (ko) 2018-03-07 2019-03-05 하전 입자 빔 계측 시스템의 하전 영향들 및 방사 손상을 최소화하기 위한 스캔 전략들

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Country Link
US (1) US10446367B2 (https=)
EP (1) EP3762779B1 (https=)
JP (1) JP7175319B2 (https=)
KR (1) KR102438826B1 (https=)
CN (2) CN121115423A (https=)
IL (1) IL276810B2 (https=)
SG (1) SG11202008092QA (https=)
WO (1) WO2019173252A1 (https=)

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US11605550B2 (en) * 2018-12-21 2023-03-14 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Alignment system
JP2021093336A (ja) * 2019-12-12 2021-06-17 株式会社日立ハイテク 画像調整方法および荷電粒子ビームシステム
US11874102B2 (en) * 2019-12-30 2024-01-16 Kla Corporation Thick photo resist layer metrology target
KR102857305B1 (ko) * 2020-02-07 2025-09-08 케이엘에이 코포레이션 반도체 디바이스의 오정합 측정에서의 비직교 타겟 및 이를 사용하기 위한 방법
CN115428139B (zh) * 2020-04-15 2024-04-12 科磊股份有限公司 可用于测量半导体装置偏移的具有装置级特征的偏移目标
US11054753B1 (en) * 2020-04-20 2021-07-06 Applied Materials Israel Ltd. Overlay monitoring
CN115485824B (zh) * 2020-05-05 2024-04-16 科磊股份有限公司 用于高表面型态半导体堆叠的计量目标
WO2021225587A1 (en) * 2020-05-06 2021-11-11 Kla Corporation Inter-step feedforward process control in the manufacture of semiconductor devices
US11686576B2 (en) * 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
US12100574B2 (en) 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
JP7144485B2 (ja) * 2020-07-15 2022-09-29 日本電子株式会社 像取得方法および電子顕微鏡
US11995848B2 (en) * 2021-03-22 2024-05-28 Applied Materials Israel Ltd. Image generation for examination of a semiconductor specimen
KR102617622B1 (ko) * 2021-04-26 2023-12-27 (주)오로스 테크놀로지 오버레이 마크 및 이를 이용한 오버레이 계측방법 및 반도체 디바이스 제조방법
KR102750903B1 (ko) * 2021-06-30 2025-01-09 (주) 오로스테크놀로지 오버레이 마크 및 이를 이용한 오버레이 계측방법 및 반도체 디바이스 제조방법
KR102750914B1 (ko) * 2021-06-30 2025-01-09 (주) 오로스테크놀로지 오버레이 마크 및 이를 이용한 오버레이 계측방법 및 반도체 디바이스 제조방법
KR102750923B1 (ko) * 2021-06-30 2025-01-09 (주) 오로스테크놀로지 오버레이 마크 및 이를 이용한 오버레이 계측방법 및 반도체 디바이스 제조방법
US12461456B2 (en) * 2022-01-28 2025-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for overlay measurement in semiconductor device manufacturing
TW202414771A (zh) * 2022-09-29 2024-04-01 聯華電子股份有限公司 疊對圖樣
US20240167813A1 (en) * 2022-11-23 2024-05-23 Kla Corporation System and method for suppression of tool induced shift in scanning overlay metrology

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US20050048741A1 (en) 2003-09-02 2005-03-03 Phan Khoi A. Pattern recognition and metrology structure for an x-initiative layout design
US20120133938A1 (en) 2010-11-30 2012-05-31 Asml Netherlands B.V. Measuring method, apparatus and substrate
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US20050048741A1 (en) 2003-09-02 2005-03-03 Phan Khoi A. Pattern recognition and metrology structure for an x-initiative layout design
US20120133938A1 (en) 2010-11-30 2012-05-31 Asml Netherlands B.V. Measuring method, apparatus and substrate
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Publication number Publication date
JP7175319B2 (ja) 2022-11-18
EP3762779A1 (en) 2021-01-13
WO2019173252A1 (en) 2019-09-12
CN121115423A (zh) 2025-12-12
CN111801626A (zh) 2020-10-20
IL276810A (en) 2020-10-29
EP3762779B1 (en) 2025-06-04
IL276810B2 (en) 2023-08-01
US10446367B2 (en) 2019-10-15
JP2021515232A (ja) 2021-06-17
US20190279841A1 (en) 2019-09-12
SG11202008092QA (en) 2020-09-29
IL276810B1 (en) 2023-04-01
KR20200118908A (ko) 2020-10-16
EP3762779A4 (en) 2021-12-01

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