KR102434087B1 - 기판 액 처리 장치 및 기판 액 처리 방법 및 기판 액 처리 프로그램을 기억한 컴퓨터 판독 가능한 기억 매체 - Google Patents

기판 액 처리 장치 및 기판 액 처리 방법 및 기판 액 처리 프로그램을 기억한 컴퓨터 판독 가능한 기억 매체 Download PDF

Info

Publication number
KR102434087B1
KR102434087B1 KR1020150143282A KR20150143282A KR102434087B1 KR 102434087 B1 KR102434087 B1 KR 102434087B1 KR 1020150143282 A KR1020150143282 A KR 1020150143282A KR 20150143282 A KR20150143282 A KR 20150143282A KR 102434087 B1 KR102434087 B1 KR 102434087B1
Authority
KR
South Korea
Prior art keywords
substrate
liquid
drying
chemical solution
solution
Prior art date
Application number
KR1020150143282A
Other languages
English (en)
Korean (ko)
Other versions
KR20160045591A (ko
Inventor
미츠노리 나카모리
준이치 기타노
데루오미 미나미
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20160045591A publication Critical patent/KR20160045591A/ko
Application granted granted Critical
Publication of KR102434087B1 publication Critical patent/KR102434087B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Spectroscopy & Molecular Physics (AREA)
KR1020150143282A 2014-10-17 2015-10-14 기판 액 처리 장치 및 기판 액 처리 방법 및 기판 액 처리 프로그램을 기억한 컴퓨터 판독 가능한 기억 매체 KR102434087B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014213012 2014-10-17
JPJP-P-2014-213012 2014-10-17
JPJP-P-2015-167418 2015-08-27
JP2015167418A JP6484144B2 (ja) 2014-10-17 2015-08-27 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体

Publications (2)

Publication Number Publication Date
KR20160045591A KR20160045591A (ko) 2016-04-27
KR102434087B1 true KR102434087B1 (ko) 2022-08-18

Family

ID=55959142

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150143282A KR102434087B1 (ko) 2014-10-17 2015-10-14 기판 액 처리 장치 및 기판 액 처리 방법 및 기판 액 처리 프로그램을 기억한 컴퓨터 판독 가능한 기억 매체

Country Status (3)

Country Link
JP (1) JP6484144B2 (ja)
KR (1) KR102434087B1 (ja)
TW (1) TWI697043B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6687486B2 (ja) * 2016-08-31 2020-04-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP7136543B2 (ja) * 2017-08-31 2022-09-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7250566B2 (ja) * 2019-02-26 2023-04-03 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7143465B2 (ja) * 2021-03-15 2022-09-28 東京エレクトロン株式会社 基板処理装置および基板処理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI286353B (en) 2004-10-12 2007-09-01 Tokyo Electron Ltd Substrate processing method and substrate processing apparatus
JP4767767B2 (ja) * 2006-06-19 2011-09-07 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
US7838425B2 (en) * 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
JP5404364B2 (ja) * 2009-12-15 2014-01-29 株式会社東芝 半導体基板の表面処理装置及び方法
JP5481366B2 (ja) * 2010-12-22 2014-04-23 東京エレクトロン株式会社 液処理方法および液処理装置
JP5320383B2 (ja) * 2010-12-27 2013-10-23 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録したコンピュータ読み取り可能な記録媒体
JP5789400B2 (ja) * 2011-04-12 2015-10-07 東京エレクトロン株式会社 液処理方法及び液処理装置
KR101497288B1 (ko) * 2012-03-06 2015-02-27 도쿄엘렉트론가부시키가이샤 액처리 방법, 액처리 장치 및 기억 매체
JP5743939B2 (ja) * 2012-03-27 2015-07-01 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
JP6148475B2 (ja) * 2013-01-25 2017-06-14 株式会社東芝 半導体製造装置および半導体装置の製造方法

Also Published As

Publication number Publication date
JP2016082223A (ja) 2016-05-16
TWI697043B (zh) 2020-06-21
JP6484144B2 (ja) 2019-03-13
TW201637086A (zh) 2016-10-16
KR20160045591A (ko) 2016-04-27

Similar Documents

Publication Publication Date Title
CN106796876B (zh) 基板液体处理方法、基板液体处理装置以及存储有基板液体处理程序的计算机可读存储介质
JP6410694B2 (ja) 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
CN110364431B (zh) 基板处理方法及基板处理装置
JP6118758B2 (ja) 基板処理装置及び基板処理方法並びに基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体
KR102434087B1 (ko) 기판 액 처리 장치 및 기판 액 처리 방법 및 기판 액 처리 프로그램을 기억한 컴퓨터 판독 가능한 기억 매체
CN105529288B (zh) 基板液处理装置和基板液处理方法
KR101350052B1 (ko) 기판처리방법 및 기판처리장치
KR102584337B1 (ko) 기판 처리 장치, 기판 처리 방법 및 기억 매체
KR20120116352A (ko) 액처리 방법 및 액처리 장치
KR102217053B1 (ko) 기판 처리 장치 및 기판 처리 방법 그리고 기판 처리 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체
KR102420293B1 (ko) 기판 처리 방법 및 기판 처리 장치, 및 기판 처리 프로그램을 기억한 컴퓨터 판독가능 기억 매체
KR102251256B1 (ko) 기판 액처리 장치 및 기판 액처리 방법
JP6983571B2 (ja) 基板処理方法および基板処理装置
JP6411571B2 (ja) 基板処理装置及び基板処理方法並びに基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体
KR102429211B1 (ko) 기판 처리 방법 및 기판 처리 장치
WO2016063886A1 (ja) 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
WO2016063885A1 (ja) 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant