KR102426328B1 - 반도체 기판의 처리 방법 및 반도체 기판의 처리 장치 - Google Patents

반도체 기판의 처리 방법 및 반도체 기판의 처리 장치 Download PDF

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Publication number
KR102426328B1
KR102426328B1 KR1020197024760A KR20197024760A KR102426328B1 KR 102426328 B1 KR102426328 B1 KR 102426328B1 KR 1020197024760 A KR1020197024760 A KR 1020197024760A KR 20197024760 A KR20197024760 A KR 20197024760A KR 102426328 B1 KR102426328 B1 KR 102426328B1
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KR
South Korea
Prior art keywords
curing agent
protective film
semiconductor substrate
wafer
curing
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KR1020197024760A
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English (en)
Korean (ko)
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KR20190108151A (ko
Inventor
켄지 키요타
테츠오 후쿠오카
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20190108151A publication Critical patent/KR20190108151A/ko
Application granted granted Critical
Publication of KR102426328B1 publication Critical patent/KR102426328B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020197024760A 2017-01-23 2018-01-16 반도체 기판의 처리 방법 및 반도체 기판의 처리 장치 KR102426328B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2017009584 2017-01-23
JPJP-P-2017-009584 2017-01-23
JP2017009555 2017-01-23
JPJP-P-2017-009555 2017-01-23
PCT/JP2018/001025 WO2018135492A1 (ja) 2017-01-23 2018-01-16 半導体基板の処理方法及び半導体基板の処理装置

Publications (2)

Publication Number Publication Date
KR20190108151A KR20190108151A (ko) 2019-09-23
KR102426328B1 true KR102426328B1 (ko) 2022-07-28

Family

ID=62907961

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197024760A KR102426328B1 (ko) 2017-01-23 2018-01-16 반도체 기판의 처리 방법 및 반도체 기판의 처리 장치

Country Status (5)

Country Link
JP (1) JP6904368B2 (ja)
KR (1) KR102426328B1 (ja)
CN (1) CN110199379B (ja)
TW (1) TWI745532B (ja)
WO (1) WO2018135492A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240050457A (ko) * 2017-08-10 2024-04-18 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
JP2020027918A (ja) * 2018-08-17 2020-02-20 株式会社ディスコ 樹脂被覆方法
JP2021129061A (ja) * 2020-02-17 2021-09-02 力成科技股▲分▼有限公司 半導体製造装置および製造方法
CN112635309A (zh) * 2020-12-07 2021-04-09 福建晶安光电有限公司 衬底加工方法及利用该方法加工的衬底
JPWO2022190916A1 (ja) * 2021-03-08 2022-09-15
JP2022188558A (ja) * 2021-06-09 2022-12-21 株式会社荏原製作所 基板処理システム、及び基板処理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005303214A (ja) * 2004-04-16 2005-10-27 Matsushita Electric Ind Co Ltd 半導体ウェーハの研削方法
JP2010192616A (ja) * 2009-02-17 2010-09-02 Disco Abrasive Syst Ltd 保護膜の形成方法及びウエーハの加工方法
JP2012084780A (ja) * 2010-10-14 2012-04-26 Renesas Electronics Corp 半導体装置の製造方法
US20150364432A1 (en) * 2014-06-16 2015-12-17 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor package
JP2016092343A (ja) * 2014-11-11 2016-05-23 富士通株式会社 半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203828A (ja) * 2000-12-28 2002-07-19 Lintec Corp ウエハの裏面研削方法
JP4728023B2 (ja) 2005-03-24 2011-07-20 株式会社ディスコ ウェハの製造方法
JP2007048958A (ja) * 2005-08-10 2007-02-22 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP5517615B2 (ja) * 2007-06-22 2014-06-11 電気化学工業株式会社 半導体ウエハ研削方法とそれに用いる樹脂組成物及び保護シート
JP2011054827A (ja) * 2009-09-03 2011-03-17 Fujitsu Semiconductor Ltd 半導体装置の製造方法及び表面保護テープ
JP5123329B2 (ja) * 2010-01-07 2013-01-23 株式会社岡本工作機械製作所 半導体基板の平坦化加工装置および平坦化加工方法
JP5744486B2 (ja) * 2010-11-17 2015-07-08 株式会社ディスコ 保護膜剥離装置
JP6213127B2 (ja) * 2012-10-25 2017-10-18 セントラル硝子株式会社 接着性組成物およびその接着方法、並びに接着後の剥離方法
JP5718515B1 (ja) 2014-01-23 2015-05-13 古河電気工業株式会社 半導体ウエハ表面保護用粘着テープおよび半導体ウエハの加工方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005303214A (ja) * 2004-04-16 2005-10-27 Matsushita Electric Ind Co Ltd 半導体ウェーハの研削方法
JP2010192616A (ja) * 2009-02-17 2010-09-02 Disco Abrasive Syst Ltd 保護膜の形成方法及びウエーハの加工方法
JP2012084780A (ja) * 2010-10-14 2012-04-26 Renesas Electronics Corp 半導体装置の製造方法
US20150364432A1 (en) * 2014-06-16 2015-12-17 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor package
JP2016092343A (ja) * 2014-11-11 2016-05-23 富士通株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
CN110199379A (zh) 2019-09-03
TWI745532B (zh) 2021-11-11
TW201841241A (zh) 2018-11-16
KR20190108151A (ko) 2019-09-23
JP6904368B2 (ja) 2021-07-14
JPWO2018135492A1 (ja) 2019-12-19
WO2018135492A1 (ja) 2018-07-26
CN110199379B (zh) 2023-07-21

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