KR102408821B1 - 변형된 화학적 기상 증착법(ap-cvd)에 의해 구리 기판 상에 그래핀을 생성하기 위한 방법 및 시스템 - Google Patents

변형된 화학적 기상 증착법(ap-cvd)에 의해 구리 기판 상에 그래핀을 생성하기 위한 방법 및 시스템 Download PDF

Info

Publication number
KR102408821B1
KR102408821B1 KR1020197002936A KR20197002936A KR102408821B1 KR 102408821 B1 KR102408821 B1 KR 102408821B1 KR 1020197002936 A KR1020197002936 A KR 1020197002936A KR 20197002936 A KR20197002936 A KR 20197002936A KR 102408821 B1 KR102408821 B1 KR 102408821B1
Authority
KR
South Korea
Prior art keywords
cylinder chamber
glass cylinder
copper sheets
graphene
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020197002936A
Other languages
English (en)
Korean (ko)
Other versions
KR20190032401A (ko
Inventor
타피아 패트리시오 하벌레
고메즈 크리스티안 오렐라나
Original Assignee
우니베르시대드 테크니카 페데리코 산타 마리아
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 우니베르시대드 테크니카 페데리코 산타 마리아 filed Critical 우니베르시대드 테크니카 페데리코 산타 마리아
Publication of KR20190032401A publication Critical patent/KR20190032401A/ko
Application granted granted Critical
Publication of KR102408821B1 publication Critical patent/KR102408821B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H10P14/42—
    • H10P95/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • General Induction Heating (AREA)
KR1020197002936A 2016-07-21 2017-07-18 변형된 화학적 기상 증착법(ap-cvd)에 의해 구리 기판 상에 그래핀을 생성하기 위한 방법 및 시스템 Active KR102408821B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CL2016001858A CL2016001858A1 (es) 2016-07-21 2016-07-21 Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado
CL1858-2016 2016-07-21
PCT/CL2017/050032 WO2018014143A1 (es) 2016-07-21 2017-07-18 Método y sistema para producir grafeno sobre un substrato de cobre por deposición de vapores químicos (ap-cvd) modificado

Publications (2)

Publication Number Publication Date
KR20190032401A KR20190032401A (ko) 2019-03-27
KR102408821B1 true KR102408821B1 (ko) 2022-06-14

Family

ID=59858379

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197002936A Active KR102408821B1 (ko) 2016-07-21 2017-07-18 변형된 화학적 기상 증착법(ap-cvd)에 의해 구리 기판 상에 그래핀을 생성하기 위한 방법 및 시스템

Country Status (6)

Country Link
US (1) US11624114B2 (enExample)
EP (1) EP3489194A4 (enExample)
JP (1) JP7039051B2 (enExample)
KR (1) KR102408821B1 (enExample)
CL (1) CL2016001858A1 (enExample)
WO (1) WO2018014143A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115744886A (zh) * 2022-11-24 2023-03-07 广东墨睿科技有限公司 一种石墨烯生长支架及生长石墨烯的方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CL2016001858A1 (es) 2016-07-21 2017-02-17 Univ Técnica Federico Santa Mar+Ia Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado
KR20220070031A (ko) * 2019-09-30 2022-05-27 램 리써치 코포레이션 리모트 플라즈마를 사용한 선택적인 그래핀 증착
CN115380365A (zh) 2020-02-13 2022-11-22 朗姆研究公司 具有无穷大选择性的高深宽比蚀刻
US12368075B2 (en) 2020-02-19 2025-07-22 Lam Research Corporation Graphene integration
CN115433920B (zh) * 2021-06-03 2024-05-14 上海新池能源科技有限公司 生长单层石墨烯的工艺方法
CN113566044A (zh) * 2021-07-30 2021-10-29 重庆大学 一种获取连续高温氯气的加热方法
CN113699503B (zh) * 2021-08-31 2022-09-09 上海交通大学 金属表面具有多相复合碳源的石墨烯制备方法及装置
CN114459336A (zh) * 2022-03-04 2022-05-10 广东粤港澳大湾区国家纳米科技创新研究院 石墨烯应变传感器及石墨烯应变传感器的制备方法
CN115125524A (zh) * 2022-07-05 2022-09-30 常州第六元素半导体有限公司 一种分段式卷对卷cvd石墨烯连续生长设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014038803A1 (en) 2012-09-04 2014-03-13 Samsung Techwin Co., Ltd Catalyst metal film-supporting device and method and apparatus for synthesizing multiple graphene films

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4698354B2 (ja) 2005-09-15 2011-06-08 株式会社リコー Ｃｖｄ装置
US20100301212A1 (en) * 2009-05-18 2010-12-02 The Regents Of The University Of California Substrate-free gas-phase synthesis of graphene sheets
KR101912798B1 (ko) 2011-01-31 2018-10-30 한화에어로스페이스 주식회사 그래핀 합성장치 및 합성방법
DE112013000502T5 (de) * 2012-01-06 2015-01-08 Ut-Battelle, Llc. Herstellung von Mono- und Multischicht-Graphen hoher Qualität in großem Maßstab durch chemische Abscheidung aus der Gasphase
GB201215579D0 (en) 2012-08-31 2012-10-17 Univ Leiden Thin film formation
US20150140211A1 (en) * 2013-11-19 2015-05-21 Cvd Equipment Corporation Scalable 2D-Film CVD Synthesis
CL2016001858A1 (es) 2016-07-21 2017-02-17 Univ Técnica Federico Santa Mar+Ia Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014038803A1 (en) 2012-09-04 2014-03-13 Samsung Techwin Co., Ltd Catalyst metal film-supporting device and method and apparatus for synthesizing multiple graphene films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115744886A (zh) * 2022-11-24 2023-03-07 广东墨睿科技有限公司 一种石墨烯生长支架及生长石墨烯的方法
CN115744886B (zh) * 2022-11-24 2024-04-19 广东墨睿科技有限公司 一种石墨烯生长支架及生长石墨烯的方法

Also Published As

Publication number Publication date
US11624114B2 (en) 2023-04-11
EP3489194A4 (en) 2020-04-22
JP2019529323A (ja) 2019-10-17
JP7039051B2 (ja) 2022-03-22
KR20190032401A (ko) 2019-03-27
WO2018014143A1 (es) 2018-01-25
CL2016001858A1 (es) 2017-02-17
EP3489194A1 (en) 2019-05-29
US20190233942A1 (en) 2019-08-01

Similar Documents

Publication Publication Date Title
KR102408821B1 (ko) 변형된 화학적 기상 증착법(ap-cvd)에 의해 구리 기판 상에 그래핀을 생성하기 위한 방법 및 시스템
Rybin et al. Efficient nitrogen doping of graphene by plasma treatment
US20150353362A1 (en) Graphene manufacturing apparatus and method
TW201609341A (zh) 連續式合成碳薄膜或無機材料薄膜之設備與方法
CN102995119B (zh) 大尺寸的六角形双层石墨烯单晶畴及其制备方法
CN103352202B (zh) 一种常压化学气相沉积大面积高质量双层石墨烯薄膜的可控制备方法
Wang Laser based fabrication of graphene
Lavin-Lopez et al. Thickness control of graphene deposited over polycrystalline nickel
KR20160092344A (ko) 탄소가 포함된 액체상의 전구체를 이용한 연속 롤투롤 방식의 고품질 그래핀 제조방법과 그 제조장치
US20140170317A1 (en) Chemical vapor deposition of graphene using a solid carbon source
Hong et al. Open-atmosphere flame synthesis of monolayer graphene
Hirano et al. Synthesis of transfer-free graphene on an insulating substrate using a solid phase reaction
KR101154416B1 (ko) 단결정 성장 방법
Rouessac et al. Preparation of silica membranes inside macroporous alumina tubes by PECVD for hydrogen selectivity
KR20130107117A (ko) 그래핀 합성 장치
RU196377U1 (ru) Устройство для получения структурированного графена
JP2019116643A (ja) グラフェンの成膜方法及びその装置
JP2008251956A (ja) 酸化膜の形成方法及びその装置
JPH03274275A (ja) 有機金属ガス利用薄膜形成装置
KR101306007B1 (ko) Ｓｂ－Ｔｅ계 열전박막의 제조방법
CN116281980B (zh) 一种利用模具构建特定限域空间制备高均匀度石墨烯薄膜的方法
JP6944699B2 (ja) 六方晶系窒化ホウ素膜の製造方法
JP7240946B2 (ja) 酸化珪素膜形成方法
TW201617476A (zh) 合成高品質碳薄膜或無機材料薄膜之設備與方法
US20240383757A1 (en) Methods for the growth of a graphene layer structure on a substrate and an opto-electronic device

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20190129

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20200715

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20211217

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20220411

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20220609

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20220610

End annual number: 3

Start annual number: 1

PG1601 Publication of registration