KR102397854B1 - 안정화된 고온 증착을 위한 가스 냉각식 기판 지지부 - Google Patents

안정화된 고온 증착을 위한 가스 냉각식 기판 지지부 Download PDF

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KR102397854B1
KR102397854B1 KR1020217028046A KR20217028046A KR102397854B1 KR 102397854 B1 KR102397854 B1 KR 102397854B1 KR 1020217028046 A KR1020217028046 A KR 1020217028046A KR 20217028046 A KR20217028046 A KR 20217028046A KR 102397854 B1 KR102397854 B1 KR 102397854B1
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South Korea
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cooling
substrate
flow
temperature
processing
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KR20210110416A (ko
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브라이언 웨스트
미쉘 에스. 콕스
정훈 오
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어플라이드 머티어리얼스, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H01L21/203—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H01L21/67109—
    • H01L21/6831—
    • H01L21/6835—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
KR1020217028046A 2014-02-14 2015-01-13 안정화된 고온 증착을 위한 가스 냉각식 기판 지지부 Active KR102397854B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201461940215P 2014-02-14 2014-02-14
US61/940,215 2014-02-14
US201461943595P 2014-02-24 2014-02-24
US61/943,595 2014-02-24
KR1020167025401A KR102299392B1 (ko) 2014-02-14 2015-01-13 안정화된 고온 증착을 위한 가스 냉각식 기판 지지부
PCT/US2015/011203 WO2015122979A1 (en) 2014-02-14 2015-01-13 Gas cooled substrate support for stabilized high temperature deposition

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020167025401A Division KR102299392B1 (ko) 2014-02-14 2015-01-13 안정화된 고온 증착을 위한 가스 냉각식 기판 지지부

Publications (2)

Publication Number Publication Date
KR20210110416A KR20210110416A (ko) 2021-09-07
KR102397854B1 true KR102397854B1 (ko) 2022-05-12

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KR1020217028046A Active KR102397854B1 (ko) 2014-02-14 2015-01-13 안정화된 고온 증착을 위한 가스 냉각식 기판 지지부
KR1020167025401A Active KR102299392B1 (ko) 2014-02-14 2015-01-13 안정화된 고온 증착을 위한 가스 냉각식 기판 지지부

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Country Status (9)

Country Link
US (2) US9790589B2 (cg-RX-API-DMAC7.html)
EP (1) EP3105778B1 (cg-RX-API-DMAC7.html)
JP (1) JP6484642B2 (cg-RX-API-DMAC7.html)
KR (2) KR102397854B1 (cg-RX-API-DMAC7.html)
CN (1) CN105993062B (cg-RX-API-DMAC7.html)
IL (1) IL247032B (cg-RX-API-DMAC7.html)
SG (1) SG11201606361QA (cg-RX-API-DMAC7.html)
TW (1) TWI662596B (cg-RX-API-DMAC7.html)
WO (1) WO2015122979A1 (cg-RX-API-DMAC7.html)

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CN111850501B (zh) * 2020-07-20 2022-09-27 江苏集萃有机光电技术研究所有限公司 一种基片架结构及真空蒸镀装置
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US12606912B2 (en) * 2020-10-23 2026-04-21 Applied Materials, Inc. High heat loss heater and electrostatic chuck for semiconductor processing
CN112663014A (zh) * 2021-01-05 2021-04-16 德润特数字影像科技（北京）有限公司 一种镀膜基板的均匀控温装置及方法
US11598006B2 (en) * 2021-01-08 2023-03-07 Sky Tech Inc. Wafer support and thin-film deposition apparatus using the same
KR20220101566A (ko) * 2021-01-11 2022-07-19 에이에스엠 아이피 홀딩 비.브이. 정전기 척
CN114959620A (zh) * 2021-02-26 2022-08-30 鑫天虹(厦门)科技有限公司 薄膜沉积设备及其晶圆承载盘
US12091752B2 (en) 2021-03-18 2024-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of manufacturing interconnect structures
KR102685208B1 (ko) 2021-04-21 2024-07-16 주식회사 피브이티 마그네트론 스퍼터링 장치
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JP7317083B2 (ja) * 2021-09-01 2023-07-28 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法
CN115305452B (zh) * 2022-07-06 2023-09-08 北京北方华创微电子装备有限公司 反应腔室
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US20100243437A1 (en) 2009-03-25 2010-09-30 Alliance For Sustainable Energy, Llc Research-scale, cadmium telluride (cdte) device development platform

Also Published As

Publication number Publication date
US9790589B2 (en) 2017-10-17
US20180037987A1 (en) 2018-02-08
CN105993062A (zh) 2016-10-05
EP3105778B1 (en) 2019-07-03
EP3105778A4 (en) 2017-11-01
JP2017512379A (ja) 2017-05-18
TW201532126A (zh) 2015-08-16
US10344375B2 (en) 2019-07-09
KR20210110416A (ko) 2021-09-07
IL247032B (en) 2022-07-01
JP6484642B2 (ja) 2019-03-13
KR102299392B1 (ko) 2021-09-06
CN105993062B (zh) 2020-08-11
TWI662596B (zh) 2019-06-11
SG11201606361QA (en) 2016-09-29
IL247032A0 (en) 2016-09-29
KR20160120339A (ko) 2016-10-17
US20150232983A1 (en) 2015-08-20
WO2015122979A1 (en) 2015-08-20
EP3105778A1 (en) 2016-12-21

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