KR102390111B1 - 혼합 마모제 텅스텐 cmp 조성물 - Google Patents

혼합 마모제 텅스텐 cmp 조성물 Download PDF

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Publication number
KR102390111B1
KR102390111B1 KR1020167029079A KR20167029079A KR102390111B1 KR 102390111 B1 KR102390111 B1 KR 102390111B1 KR 1020167029079 A KR1020167029079 A KR 1020167029079A KR 20167029079 A KR20167029079 A KR 20167029079A KR 102390111 B1 KR102390111 B1 KR 102390111B1
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Prior art keywords
acid
colloidal silica
silica abrasive
polishing composition
polishing
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Korean (ko)
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KR20160135774A (ko
Inventor
윌리엄 워드
글렌 화이트너
스티븐 그럼빈
제프리 다이사드
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씨엠씨 머티리얼즈, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/745—Iron
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H01L21/304—
    • H01L21/30625—
    • H01L21/3212—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020167029079A 2014-03-24 2015-03-20 혼합 마모제 텅스텐 cmp 조성물 Active KR102390111B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/222,736 US9303190B2 (en) 2014-03-24 2014-03-24 Mixed abrasive tungsten CMP composition
US14/222,736 2014-03-24
PCT/US2015/021674 WO2015148295A1 (en) 2014-03-24 2015-03-20 Mixed abrasive tungsten cmp composition

Publications (2)

Publication Number Publication Date
KR20160135774A KR20160135774A (ko) 2016-11-28
KR102390111B1 true KR102390111B1 (ko) 2022-04-25

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KR1020167029079A Active KR102390111B1 (ko) 2014-03-24 2015-03-20 혼합 마모제 텅스텐 cmp 조성물

Country Status (7)

Country Link
US (1) US9303190B2 (https=)
EP (1) EP3123498B1 (https=)
JP (1) JP6633540B2 (https=)
KR (1) KR102390111B1 (https=)
CN (1) CN106415796B (https=)
TW (1) TWI545184B (https=)
WO (1) WO2015148295A1 (https=)

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US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
WO2018058347A1 (en) * 2016-09-28 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing of tungsten using method and composition containing quaternary phosphonium compounds
WO2018058397A1 (en) * 2016-09-29 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US10633558B2 (en) 2016-09-29 2020-04-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
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US10181408B2 (en) * 2017-01-31 2019-01-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten using polyglycols and polyglycol derivatives
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US10600655B2 (en) 2017-08-10 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
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US20200172759A1 (en) * 2018-12-04 2020-06-04 Cabot Microelectronics Corporation Composition and method for cobalt cmp
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US10676647B1 (en) * 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
US12325639B2 (en) * 2019-03-06 2025-06-10 Fuso Chemical Co., Ltd. Colloidal silica and production method therefor
KR102258900B1 (ko) * 2019-04-22 2021-06-02 주식회사 케이씨텍 금속막 연마용 슬러리 조성물
US11597854B2 (en) * 2019-07-16 2023-03-07 Cmc Materials, Inc. Method to increase barrier film removal rate in bulk tungsten slurry
WO2021202500A1 (en) * 2020-03-31 2021-10-07 Cmc Materials, Inc. Cmp composition including a novel abrasive
KR102851125B1 (ko) * 2021-03-31 2025-08-28 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR20240145790A (ko) 2023-03-28 2024-10-07 고등기술연구원연구조합 실리카 나노 분말 및 웨이퍼의 화학기계 연마용 슬러리 제조 방법

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Publication number Publication date
EP3123498A4 (en) 2017-12-27
WO2015148295A1 (en) 2015-10-01
EP3123498A1 (en) 2017-02-01
KR20160135774A (ko) 2016-11-28
US20150267083A1 (en) 2015-09-24
TWI545184B (zh) 2016-08-11
JP2017516296A (ja) 2017-06-15
US9303190B2 (en) 2016-04-05
JP6633540B2 (ja) 2020-01-22
TW201602324A (zh) 2016-01-16
CN106415796B (zh) 2019-06-25
EP3123498B1 (en) 2019-10-02
CN106415796A (zh) 2017-02-15

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