KR102374881B1 - 구배 박막 필름 - Google Patents
구배 박막 필름 Download PDFInfo
- Publication number
- KR102374881B1 KR102374881B1 KR1020167009588A KR20167009588A KR102374881B1 KR 102374881 B1 KR102374881 B1 KR 102374881B1 KR 1020167009588 A KR1020167009588 A KR 1020167009588A KR 20167009588 A KR20167009588 A KR 20167009588A KR 102374881 B1 KR102374881 B1 KR 102374881B1
- Authority
- KR
- South Korea
- Prior art keywords
- film
- plasma
- article
- chemical
- precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 title claims description 16
- 238000000034 method Methods 0.000 claims abstract description 83
- 239000000203 mixture Substances 0.000 claims abstract description 59
- 239000000126 substance Substances 0.000 claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 211
- 239000000758 substrate Substances 0.000 claims description 88
- 238000000151 deposition Methods 0.000 claims description 71
- 239000002243 precursor Substances 0.000 claims description 50
- 230000008021 deposition Effects 0.000 claims description 49
- 239000012707 chemical precursor Substances 0.000 claims description 43
- 230000008569 process Effects 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000010790 dilution Methods 0.000 claims description 3
- 239000012895 dilution Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 229910052755 nonmetal Inorganic materials 0.000 claims description 2
- 150000002843 nonmetals Chemical class 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 72
- 238000000576 coating method Methods 0.000 description 43
- 239000010410 layer Substances 0.000 description 43
- 239000011248 coating agent Substances 0.000 description 26
- 238000010586 diagram Methods 0.000 description 17
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 14
- 238000005299 abrasion Methods 0.000 description 12
- 239000001307 helium Substances 0.000 description 12
- 229910052734 helium Inorganic materials 0.000 description 12
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- -1 and the like Substances 0.000 description 7
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009501 film coating Methods 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000002318 adhesion promoter Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- 150000002835 noble gases Chemical class 0.000 description 3
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000004918 carbon fiber reinforced polymer Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XWCDCDSDNJVCLO-UHFFFAOYSA-N Chlorofluoromethane Chemical compound FCCl XWCDCDSDNJVCLO-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 125000004773 chlorofluoromethyl group Chemical group [H]C(F)(Cl)* 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 230000004886 head movement Effects 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229920005615 natural polymer Polymers 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- IZRJPHXTEXTLHY-UHFFFAOYSA-N triethoxy(2-triethoxysilylethyl)silane Chemical compound CCO[Si](OCC)(OCC)CC[Si](OCC)(OCC)OCC IZRJPHXTEXTLHY-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/104,796 | 2013-12-12 | ||
| US14/104,796 US9139908B2 (en) | 2013-12-12 | 2013-12-12 | Gradient thin films |
| PCT/US2014/056467 WO2015088613A1 (en) | 2013-12-12 | 2014-09-19 | Gradient thin films |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20160098165A KR20160098165A (ko) | 2016-08-18 |
| KR102374881B1 true KR102374881B1 (ko) | 2022-03-15 |
Family
ID=51660657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020167009588A Active KR102374881B1 (ko) | 2013-12-12 | 2014-09-19 | 구배 박막 필름 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9139908B2 (enExample) |
| EP (1) | EP3080331B1 (enExample) |
| JP (1) | JP6381649B2 (enExample) |
| KR (1) | KR102374881B1 (enExample) |
| CN (1) | CN105723013B (enExample) |
| AU (1) | AU2014360781B2 (enExample) |
| RU (1) | RU2666198C1 (enExample) |
| WO (1) | WO2015088613A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9869013B2 (en) * | 2014-04-25 | 2018-01-16 | Applied Materials, Inc. | Ion assisted deposition top coat of rare-earth oxide |
| WO2018130289A1 (en) * | 2017-01-12 | 2018-07-19 | Applied Materials, Inc. | Hardcoat layer system and method for manufacturing a hardcoat layer system in a continuous roll-to-roll process |
| US10985344B2 (en) | 2017-10-27 | 2021-04-20 | Applied Materials, Inc. | Flexible cover lens films |
| JP7716853B2 (ja) | 2018-05-10 | 2025-08-01 | アプライド マテリアルズ インコーポレイテッド | フレキシブルディスプレイ用の交換可能なカバーレンズ |
| WO2020036693A1 (en) | 2018-08-14 | 2020-02-20 | Applied Materials, Inc. | Multi-layer wet-dry hardcoats for flexible cover lens |
| RU2702881C1 (ru) * | 2018-09-28 | 2019-10-11 | Общество с ограниченной ответственностью "Научно-производственное объединение "Защитные покрытия", ООО "НПО "Защитные покрытия" | Градиентное металлополимерное покрытие |
| CN113227909B (zh) | 2018-12-20 | 2025-07-04 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| KR102780681B1 (ko) | 2019-06-26 | 2025-03-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 폴더블 디스플레이들을 위한 플렉서블 다층 커버 렌즈 스택들 |
| TWI869221B (zh) | 2019-06-26 | 2025-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| JP7618601B2 (ja) * | 2019-06-28 | 2025-01-21 | ラム リサーチ コーポレーション | 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト |
| US20240117495A1 (en) * | 2019-10-14 | 2024-04-11 | Silcotek Corp. | Cold thermal chemical vapor deposition |
| KR20250007037A (ko) | 2020-01-15 | 2025-01-13 | 램 리써치 코포레이션 | 포토레지스트 부착 및 선량 감소를 위한 하부층 |
| CN116626993A (zh) | 2020-07-07 | 2023-08-22 | 朗姆研究公司 | 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺 |
| JP7562696B2 (ja) | 2020-11-13 | 2024-10-07 | ラム リサーチ コーポレーション | フォトレジストのドライ除去用プロセスツール |
| DE102022105041A1 (de) * | 2022-03-03 | 2023-09-07 | IonKraft GmbH | Beschichtungstechnik für Kunststoffbehälter |
| BR102022012045A2 (pt) * | 2022-06-17 | 2024-01-02 | Autocoat Equipamentos E Processos De Deposição Ltda | Dispositivo para deposição de filmes finos por lâmina e processo derivado |
| CN117004920A (zh) * | 2023-07-28 | 2023-11-07 | 上海大学 | 一种梯度h-BNC纳米自清洁薄膜设计方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012135879A (ja) * | 2010-12-24 | 2012-07-19 | Kojima Press Industry Co Ltd | 樹脂製品及びその製造方法 |
Family Cites Families (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1051393A (enExample) | 1964-08-28 | 1900-01-01 | ||
| US4414085A (en) * | 1981-10-08 | 1983-11-08 | Wickersham Charles E | Method of depositing a high-emissivity layer |
| DE3706340A1 (de) * | 1987-02-27 | 1988-09-08 | Winter & Sohn Ernst | Verfahren zum auftragen einer verschleissschutzschicht und danach hergestelltes erzeugnis |
| US5482602A (en) * | 1993-11-04 | 1996-01-09 | United Technologies Corporation | Broad-beam ion deposition coating methods for depositing diamond-like-carbon coatings on dynamic surfaces |
| DE4445427C2 (de) * | 1994-12-20 | 1997-04-30 | Schott Glaswerke | Plasma-CVD-Verfahren zur Herstellung einer Gradientenschicht |
| RU2189663C2 (ru) * | 1997-06-30 | 2002-09-20 | Мацушита Электрик Индастриал Ко., Лтд. | Способ и устройство для изготовления тонкой полупроводниковой пленки |
| US5926740A (en) * | 1997-10-27 | 1999-07-20 | Micron Technology, Inc. | Graded anti-reflective coating for IC lithography |
| JPH11124693A (ja) | 1997-10-20 | 1999-05-11 | Nippon Steel Corp | 精密機器用部材 |
| JP3782608B2 (ja) | 1998-05-22 | 2006-06-07 | キヤノン株式会社 | 薄膜材料および薄膜作成法 |
| JP2000256850A (ja) * | 1999-03-04 | 2000-09-19 | Riken Corp | ダイヤモンドライクカーボン薄膜及びその製造方法 |
| US6221737B1 (en) | 1999-09-30 | 2001-04-24 | Philips Electronics North America Corporation | Method of making semiconductor devices with graded top oxide and graded drift region |
| AU4901201A (en) | 1999-10-25 | 2001-07-03 | Rolls-Royce Corporation | Erosion-resistant coatings for organic matric composites |
| US20050268962A1 (en) | 2000-04-27 | 2005-12-08 | Russell Gaudiana | Flexible Photovoltaic cells, systems and methods |
| US20050257827A1 (en) | 2000-04-27 | 2005-11-24 | Russell Gaudiana | Rotational photovoltaic cells, systems and methods |
| US6962751B2 (en) * | 2001-06-13 | 2005-11-08 | Sumitomo Electric Industries, Ltd. | Amorphous carbon coated tools and method of producing the same |
| US6881475B2 (en) * | 2001-06-13 | 2005-04-19 | Sumitomo Electric Industries, Ltd | Amorphous carbon coated tool and fabrication method thereof |
| JP4151000B2 (ja) * | 2002-06-13 | 2008-09-17 | 株式会社オンワード技研 | ワークの表面処理方法と、その装置 |
| US6852920B2 (en) | 2002-06-22 | 2005-02-08 | Nanosolar, Inc. | Nano-architected/assembled solar electricity cell |
| US7713592B2 (en) * | 2003-02-04 | 2010-05-11 | Tegal Corporation | Nanolayer deposition process |
| US20050118502A1 (en) | 2003-11-27 | 2005-06-02 | Matsushita Electric Industrial Co., Ltd. | Energy device and method for producing the same |
| US20090026587A1 (en) * | 2004-01-14 | 2009-01-29 | International Business Machines Corporation | Gradient deposition of low-k cvd materials |
| KR20070037492A (ko) * | 2004-06-15 | 2007-04-04 | 에비자 테크놀로지, 인크. | 다성분 유전체 필름을 형성하기 위한 시스템 및 방법 |
| US20060210783A1 (en) * | 2005-03-18 | 2006-09-21 | Seder Thomas A | Coated article with anti-reflective coating and method of making same |
| US7637967B2 (en) | 2005-12-08 | 2009-12-29 | Siemens Energy, Inc. | Stepped gradient fuel electrode and method for making the same |
| US7700167B2 (en) | 2006-08-31 | 2010-04-20 | Honeywell International Inc. | Erosion-protective coatings on polymer-matrix composites and components incorporating such coated composites |
| WO2008114627A1 (ja) * | 2007-03-16 | 2008-09-25 | Konica Minolta Holdings, Inc. | 防汚性積層体及びディスプレイ用前面板 |
| US7615482B2 (en) * | 2007-03-23 | 2009-11-10 | International Business Machines Corporation | Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength |
| JP5407869B2 (ja) * | 2007-11-19 | 2014-02-05 | コニカミノルタ株式会社 | 撥水または防汚性物品、それを用いて構成された建築用窓ガラス、車両用窓ガラス、ディスプレイ部材、光学部品 |
| US20090301550A1 (en) | 2007-12-07 | 2009-12-10 | Sunprint Inc. | Focused acoustic printing of patterned photovoltaic materials |
| US8099792B1 (en) | 2008-01-07 | 2012-01-17 | Northwestern University | Methods and apparatus for spatially resolved photocurrent mapping of operating photovoltaic devices using atomic force photovoltaic microscopy |
| WO2009094663A2 (en) | 2008-01-25 | 2009-07-30 | University Of Washington | Photovoltaic devices having metal oxide electron-transport layers |
| US20090229667A1 (en) | 2008-03-14 | 2009-09-17 | Solarmer Energy, Inc. | Translucent solar cell |
| FR2931844B1 (fr) | 2008-06-02 | 2013-11-01 | Alex Hr Roustaei | Systemes pour la production de l'energie a la demande comme une source seule ou en assistance avec autres sources d'energie dans le domaine du transport ou de l'habitat. |
| DE102008028540A1 (de) * | 2008-06-16 | 2009-12-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Abscheiden einer Gradientenschicht auf einem Kunststoffsubstrat sowie Kunststoffsubstrat mit einer Gradientenschicht |
| DE102008033938B4 (de) | 2008-07-18 | 2012-04-19 | Innovent E.V. | Verfahren zur Abscheidung von Schichten auf einem Substrat |
| US20110253217A1 (en) | 2008-09-30 | 2011-10-20 | The Regents Of The University Of California | Controlled Alignment in Polymeric Solar Cells |
| US8269100B2 (en) | 2008-09-30 | 2012-09-18 | Uchicago Argonne, Llc | Hybrid solar cells via UV-polymerization of polymer precursor |
| KR20110094279A (ko) | 2008-10-31 | 2011-08-23 | 바스프 에스이 | 유기 태양 전지용 및 유기 광검출기용 광활성 층 제조를 위한 메로시아닌 |
| DE102008060923B4 (de) | 2008-12-06 | 2012-09-27 | Innovent E.V. | Verwendung einer Schicht |
| FR2956869B1 (fr) | 2010-03-01 | 2014-05-16 | Alex Hr Roustaei | Systeme de production de film flexible a haute capacite destine a des cellules photovoltaiques et oled par deposition cyclique des couches |
| JP2012519965A (ja) | 2009-03-06 | 2012-08-30 | ユニバーシティ オブ フロリダ リサーチ ファウンデーション，インク． | 空気安定性有機−無機ナノ粒子ハイブリッド太陽電池 |
| JP5222764B2 (ja) * | 2009-03-24 | 2013-06-26 | 株式会社神戸製鋼所 | 積層皮膜および積層皮膜被覆部材 |
| US8206794B2 (en) * | 2009-05-04 | 2012-06-26 | The Boeing Company | System and method for applying abrasion-resistant coatings |
| CN101560653A (zh) * | 2009-05-14 | 2009-10-21 | 浙江大学 | 梯度折射率薄膜的制备方法 |
| US20110030770A1 (en) | 2009-08-04 | 2011-02-10 | Molecular Imprints, Inc. | Nanostructured organic solar cells |
| EP2462254A1 (en) * | 2009-08-07 | 2012-06-13 | Oerlikon Trading AG, Trübbach | Tribology combined with corrosion resistance: a new family of pvd- and pacvd coatings |
| WO2011045253A1 (de) | 2009-10-13 | 2011-04-21 | Basf Se | Mischungen zur herstellung von photoaktiven schichten für organische solarzellen und organische photodetektoren |
| US8871884B2 (en) | 2009-10-28 | 2014-10-28 | University Of Washington | Copolymer semiconductors comprising thiazolothiazole or benzobisthiazole, or benzobisoxazole electron acceptor subunits, and electron donor subunits, and their uses in transistors and solar cells |
| WO2012031083A2 (en) | 2010-09-01 | 2012-03-08 | Iowa State University Research Foundation, Inc. | Textured micrometer scale templates as light managing fabrication platform for organic solar cells |
| US20120024380A1 (en) | 2010-10-27 | 2012-02-02 | Primestar Solar, Inc. | Intermixing of cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices and methods of their manufacture |
| EP2647050B1 (en) | 2010-12-03 | 2018-04-11 | Novaled GmbH | Method for forming an electrical interconnection in an organic photovoltaic device and an organic photovoltaic device made by the same |
| CA2872274C (en) * | 2012-06-23 | 2016-11-29 | Frito-Lay North America, Inc. | Deposition of ultra-thin inorganic oxide coatings on packaging |
-
2013
- 2013-12-12 US US14/104,796 patent/US9139908B2/en active Active
-
2014
- 2014-09-19 KR KR1020167009588A patent/KR102374881B1/ko active Active
- 2014-09-19 AU AU2014360781A patent/AU2014360781B2/en active Active
- 2014-09-19 RU RU2016111166A patent/RU2666198C1/ru active
- 2014-09-19 JP JP2016538729A patent/JP6381649B2/ja active Active
- 2014-09-19 EP EP14780989.1A patent/EP3080331B1/en active Active
- 2014-09-19 CN CN201480062243.6A patent/CN105723013B/zh active Active
- 2014-09-19 WO PCT/US2014/056467 patent/WO2015088613A1/en not_active Ceased
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012135879A (ja) * | 2010-12-24 | 2012-07-19 | Kojima Press Industry Co Ltd | 樹脂製品及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105723013B (zh) | 2018-01-16 |
| KR20160098165A (ko) | 2016-08-18 |
| CN105723013A (zh) | 2016-06-29 |
| WO2015088613A1 (en) | 2015-06-18 |
| RU2666198C1 (ru) | 2018-09-06 |
| JP2017500448A (ja) | 2017-01-05 |
| EP3080331A1 (en) | 2016-10-19 |
| EP3080331B1 (en) | 2024-12-18 |
| AU2014360781A1 (en) | 2016-04-21 |
| US20150167170A1 (en) | 2015-06-18 |
| AU2014360781B2 (en) | 2018-04-12 |
| JP6381649B2 (ja) | 2018-08-29 |
| US9139908B2 (en) | 2015-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102374881B1 (ko) | 구배 박막 필름 | |
| JP4860603B2 (ja) | コーティング、並びにそれを製造するための方法及び装置 | |
| CN105556698A (zh) | 用于高性能涂层的沉积的方法以及封装的电子器件 | |
| TW201413540A (zh) | 藍寶石上之疏油性塗層 | |
| JP2016513753A (ja) | 酸素分圧を有する環境内におけるアルミニウム源の使用によって酸化アルミニウムを基板上に成長させ、透光性、耐スクラッチ性の窓部材を形成する方法。 | |
| TW201331143A (zh) | 用於製造具光學及易於清潔之塗層的玻璃製品之製程 | |
| JP6276266B2 (ja) | 封入バリアフィルムを備える光起電装置 | |
| TWI424185B (zh) | 抗反射板及其抗反射結構之製造方法 | |
| JP6022629B2 (ja) | コーティング方法 | |
| CN103906855B (zh) | 用于使用常压等离子体进行沉积的方法和装置 | |
| Maula | Atomic layer deposition for industrial optical coatings | |
| CN108137832B (zh) | 多层阻隔叠堆 | |
| TWI668320B (zh) | 提高抗汙膜之附著力的方法 | |
| GB2518358A (en) | Glass preforms for molding and a method of molding glass articles | |
| JP7410964B2 (ja) | 薄膜中に金属または金属酸化物を含むシリコン金属酸化物封止膜およびその製造方法 | |
| Suzaki et al. | Fabrication of a Transparent Anti-stain Thin Film Using an Atmospheric Pressure Cold Plasma Deposition System | |
| CN120233472A (zh) | 玻璃显示面板防护膜、其制备方法以及包括其的产品 | |
| Yan et al. | Observation and analysis of micro pizza defects in organosilicon coatings of industrial manufacture | |
| Wang et al. | Investigation on Micro Defects of the Protective Coating SiOx in Mass Manufacturing Processes | |
| Teshima et al. | Gas Barrier Performance of Surface-Modified Silica Films: Dependencies on Surface Functional Groups of the Films | |
| Lee et al. | Barrier SiO | |
| CN101762834A (zh) | 抗反射板及其抗反射结构的制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20160412 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20190731 Comment text: Request for Examination of Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20210210 Patent event code: PE09021S01D |
|
| E90F | Notification of reason for final refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Final Notice of Reason for Refusal Patent event date: 20210825 Patent event code: PE09021S02D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20220221 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20220311 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20220311 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration |