KR102331084B1 - 플라스마 처리 방법 및 플라스마 애싱 장치 - Google Patents

플라스마 처리 방법 및 플라스마 애싱 장치 Download PDF

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KR102331084B1
KR102331084B1 KR1020190084891A KR20190084891A KR102331084B1 KR 102331084 B1 KR102331084 B1 KR 102331084B1 KR 1020190084891 A KR1020190084891 A KR 1020190084891A KR 20190084891 A KR20190084891 A KR 20190084891A KR 102331084 B1 KR102331084 B1 KR 102331084B1
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gas
plasma
amorphous carbon
carbon film
film
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KR1020190084891A
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Korean (ko)
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KR20200016164A (ko
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도루 이토
마사히토 모리
다다미츠 가네키요
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주식회사 히타치하이테크
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    • H—ELECTRICITY
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
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    • H01J37/32431—Constructional details of the reactor
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    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020190084891A 2018-08-06 2019-07-15 플라스마 처리 방법 및 플라스마 애싱 장치 KR102331084B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2018/029335 WO2020031224A1 (fr) 2018-08-06 2018-08-06 Procédé de traitement au plasma et dispositif de calcination au plasma
JPPCT/JP2018/029335 2018-08-06

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Publication Number Publication Date
KR20200016164A KR20200016164A (ko) 2020-02-14
KR102331084B1 true KR102331084B1 (ko) 2021-11-25

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KR1020190084891A KR102331084B1 (ko) 2018-08-06 2019-07-15 플라스마 처리 방법 및 플라스마 애싱 장치

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US (1) US11456183B2 (fr)
JP (1) JP6802883B2 (fr)
KR (1) KR102331084B1 (fr)
CN (1) CN110808210B (fr)
TW (1) TWI718597B (fr)
WO (1) WO2020031224A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021255812A1 (fr) * 2020-06-16 2021-12-23 株式会社日立ハイテク Dispositif de traitement par plasma et procédé de traitement par plasma
CN114563922B (zh) * 2020-11-27 2023-07-04 长鑫存储技术有限公司 刻蚀机台的处理方法

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US20110136346A1 (en) * 2009-12-04 2011-06-09 Axcelis Technologies, Inc. Substantially Non-Oxidizing Plasma Treatment Devices and Processes
US20150064914A1 (en) 2013-08-30 2015-03-05 Applied Materials, Inc. Method of etching a boron doped carbon hardmask

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JP2006276869A (ja) * 2006-04-14 2006-10-12 Fujitsu Ltd 半導体装置の製造方法
CN101622693B (zh) * 2007-02-28 2012-07-04 东京毅力科创株式会社 无定形碳膜的形成方法和半导体装置的制造方法
US20100330805A1 (en) 2007-11-02 2010-12-30 Kenny Linh Doan Methods for forming high aspect ratio features on a substrate
JP2011228436A (ja) 2010-04-19 2011-11-10 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2012084847A (ja) * 2010-09-17 2012-04-26 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
US8822350B2 (en) * 2010-11-19 2014-09-02 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus
US9299581B2 (en) * 2011-05-12 2016-03-29 Applied Materials, Inc. Methods of dry stripping boron-carbon films
JP5933222B2 (ja) * 2011-11-08 2016-06-08 東京エレクトロン株式会社 温度制御方法、制御装置及びプラズマ処理装置
JP2014007370A (ja) 2012-06-01 2014-01-16 Tokyo Electron Ltd プラズマエッチング方法
JP6078419B2 (ja) 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
KR102132361B1 (ko) * 2013-11-06 2020-07-10 매슨 테크놀로지 인크 수직 앤에이앤디 디바이스에 대한 새로운 마스크 제거 방법
JP6277004B2 (ja) 2014-01-31 2018-02-07 株式会社日立ハイテクノロジーズ ドライエッチング方法
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JP2018046185A (ja) 2016-09-15 2018-03-22 東京エレクトロン株式会社 酸化シリコン及び窒化シリコンを互いに選択的にエッチングする方法
JP6878853B2 (ja) 2016-11-28 2021-06-02 住友電気工業株式会社 半導体素子を作製する方法
JP6837886B2 (ja) 2017-03-21 2021-03-03 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
JP6772117B2 (ja) 2017-08-23 2020-10-21 株式会社日立ハイテク エッチング方法およびエッチング装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110136346A1 (en) * 2009-12-04 2011-06-09 Axcelis Technologies, Inc. Substantially Non-Oxidizing Plasma Treatment Devices and Processes
US20150064914A1 (en) 2013-08-30 2015-03-05 Applied Materials, Inc. Method of etching a boron doped carbon hardmask

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US11456183B2 (en) 2022-09-27
JP2020025084A (ja) 2020-02-13
CN110808210A (zh) 2020-02-18
CN110808210B (zh) 2023-12-12
KR20200016164A (ko) 2020-02-14
JP6802883B2 (ja) 2020-12-23
WO2020031224A1 (fr) 2020-02-13
TW202008461A (zh) 2020-02-16
TWI718597B (zh) 2021-02-11
US20200043744A1 (en) 2020-02-06

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