KR102301560B1 - 웨이퍼 지오메트리 시스템에서의 투명막 에러 보정 패턴 - Google Patents

웨이퍼 지오메트리 시스템에서의 투명막 에러 보정 패턴 Download PDF

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KR102301560B1
KR102301560B1 KR1020197022676A KR20197022676A KR102301560B1 KR 102301560 B1 KR102301560 B1 KR 102301560B1 KR 1020197022676 A KR1020197022676 A KR 1020197022676A KR 20197022676 A KR20197022676 A KR 20197022676A KR 102301560 B1 KR102301560 B1 KR 102301560B1
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wafer
geometry
calibration model
calibration
thickness
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KR20190097281A (ko
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헬렌 리우
앤드류 젱
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/045—Correction of measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Seats For Vehicles (AREA)
KR1020197022676A 2017-01-09 2018-01-05 웨이퍼 지오메트리 시스템에서의 투명막 에러 보정 패턴 Active KR102301560B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762443815P 2017-01-09 2017-01-09
US62/443,815 2017-01-09
US15/649,259 US10571248B2 (en) 2017-01-09 2017-07-13 Transparent film error correction pattern in wafer geometry system
US15/649,259 2017-07-13
PCT/US2018/012673 WO2018129385A1 (en) 2017-01-09 2018-01-05 Transparent film error correction pattern in wafer geometry system

Publications (2)

Publication Number Publication Date
KR20190097281A KR20190097281A (ko) 2019-08-20
KR102301560B1 true KR102301560B1 (ko) 2021-09-10

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KR1020197022676A Active KR102301560B1 (ko) 2017-01-09 2018-01-05 웨이퍼 지오메트리 시스템에서의 투명막 에러 보정 패턴

Country Status (8)

Country Link
US (1) US10571248B2 (enExample)
EP (1) EP3549159B1 (enExample)
JP (1) JP6917462B2 (enExample)
KR (1) KR102301560B1 (enExample)
CN (1) CN110419098B (enExample)
SG (1) SG11201906177WA (enExample)
TW (1) TWI752146B (enExample)
WO (1) WO2018129385A1 (enExample)

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US10317198B2 (en) * 2016-09-30 2019-06-11 Kla-Tencor Corporation Three-dimensional mapping of a wafer
CN110998449B (zh) * 2017-08-07 2022-03-01 Asml荷兰有限公司 计算量测
US10852125B2 (en) * 2017-11-28 2020-12-01 Koh Young Technology Inc. Apparatus for inspecting film on substrate by using optical interference and method thereof
EP3489619B1 (en) 2017-11-28 2025-08-13 Koh Young Technology Inc. Apparatus for inspecting substrate and method thereof
US11112234B2 (en) * 2018-03-07 2021-09-07 Applejack 199 L.P. Multi-probe gauge for slab characterization
JP6402273B1 (ja) * 2018-05-18 2018-10-10 大塚電子株式会社 光学測定装置及び光学測定方法
US11049720B2 (en) * 2018-10-19 2021-06-29 Kla Corporation Removable opaque coating for accurate optical topography measurements on top surfaces of transparent films
JP2022524926A (ja) * 2019-01-31 2022-05-11 キング・アブドゥッラー・ユニバーシティ・オブ・サイエンス・アンド・テクノロジー 多層ナノ素子に基づく光処理デバイス
US20250044073A1 (en) * 2023-08-04 2025-02-06 Orbotech Ltd. Thin film thickness adjustments for three-dimensional interferometric measurements

Citations (3)

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JP2004361218A (ja) 2003-06-04 2004-12-24 Toray Eng Co Ltd 表面形状および／または膜厚測定方法及びその装置
JP2015087197A (ja) 2013-10-30 2015-05-07 レーザーテック株式会社 膜厚測定装置及び膜厚測定方法
JP2018531381A (ja) 2015-10-02 2018-10-25 ソワテク 多層半導体構造の層における厚さ変動を測定する方法

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US5129724A (en) * 1991-01-29 1992-07-14 Wyko Corporation Apparatus and method for simultaneous measurement of film thickness and surface height variation for film-substrate sample
US7324214B2 (en) 2003-03-06 2008-01-29 Zygo Corporation Interferometer and method for measuring characteristics of optically unresolved surface features
US6847458B2 (en) 2003-03-20 2005-01-25 Phase Shift Technology, Inc. Method and apparatus for measuring the shape and thickness variation of polished opaque plates
WO2005029193A2 (en) * 2003-09-15 2005-03-31 Zygo Corporation Interferometric analysis of surfaces.
CN100485312C (zh) * 2004-03-11 2009-05-06 Icos视检系统有限公司 用于波前控制和改进的3d测量的方法和装置
US7595891B2 (en) * 2005-07-09 2009-09-29 Kla-Tencor Corporation Measurement of the top surface of an object with/without transparent thin films in white light interferometry
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JP2013502592A (ja) 2009-08-24 2013-01-24 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジ方法および装置、リソグラフィ装置、リソグラフィプロセシングセル、およびメトロロジターゲットを備える基板
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JP2004361218A (ja) 2003-06-04 2004-12-24 Toray Eng Co Ltd 表面形状および／または膜厚測定方法及びその装置
JP2015087197A (ja) 2013-10-30 2015-05-07 レーザーテック株式会社 膜厚測定装置及び膜厚測定方法
JP2018531381A (ja) 2015-10-02 2018-10-25 ソワテク 多層半導体構造の層における厚さ変動を測定する方法

Also Published As

Publication number Publication date
US10571248B2 (en) 2020-02-25
TW201839876A (zh) 2018-11-01
TWI752146B (zh) 2022-01-11
JP2020503526A (ja) 2020-01-30
EP3549159A1 (en) 2019-10-09
SG11201906177WA (en) 2019-08-27
KR20190097281A (ko) 2019-08-20
US20180195855A1 (en) 2018-07-12
EP3549159B1 (en) 2024-08-07
EP3549159A4 (en) 2020-09-09
JP6917462B2 (ja) 2021-08-11
CN110419098B (zh) 2021-02-02
WO2018129385A1 (en) 2018-07-12
CN110419098A (zh) 2019-11-05

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