TWI752146B - 在晶圓幾何系統中透明薄膜誤差校正型態 - Google Patents
在晶圓幾何系統中透明薄膜誤差校正型態 Download PDFInfo
- Publication number
- TWI752146B TWI752146B TW107100588A TW107100588A TWI752146B TW I752146 B TWI752146 B TW I752146B TW 107100588 A TW107100588 A TW 107100588A TW 107100588 A TW107100588 A TW 107100588A TW I752146 B TWI752146 B TW I752146B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- calibration model
- calibration
- thickness
- geometry
- Prior art date
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
- G01B21/045—Correction of measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Seats For Vehicles (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762443815P | 2017-01-09 | 2017-01-09 | |
| US62/443,815 | 2017-01-09 | ||
| US15/649,259 | 2017-07-13 | ||
| US15/649,259 US10571248B2 (en) | 2017-01-09 | 2017-07-13 | Transparent film error correction pattern in wafer geometry system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201839876A TW201839876A (zh) | 2018-11-01 |
| TWI752146B true TWI752146B (zh) | 2022-01-11 |
Family
ID=62782771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107100588A TWI752146B (zh) | 2017-01-09 | 2018-01-08 | 在晶圓幾何系統中透明薄膜誤差校正型態 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10571248B2 (enExample) |
| EP (1) | EP3549159B1 (enExample) |
| JP (1) | JP6917462B2 (enExample) |
| KR (1) | KR102301560B1 (enExample) |
| CN (1) | CN110419098B (enExample) |
| SG (1) | SG11201906177WA (enExample) |
| TW (1) | TWI752146B (enExample) |
| WO (1) | WO2018129385A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI793321B (zh) * | 2018-05-18 | 2023-02-21 | 日商大塚電子股份有限公司 | 光學量測裝置及光學量測方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10317198B2 (en) * | 2016-09-30 | 2019-06-11 | Kla-Tencor Corporation | Three-dimensional mapping of a wafer |
| US11067902B2 (en) * | 2017-08-07 | 2021-07-20 | Asml Netherlands B.V. | Computational metrology |
| EP3489619B1 (en) | 2017-11-28 | 2025-08-13 | Koh Young Technology Inc. | Apparatus for inspecting substrate and method thereof |
| US10852125B2 (en) * | 2017-11-28 | 2020-12-01 | Koh Young Technology Inc. | Apparatus for inspecting film on substrate by using optical interference and method thereof |
| US11112234B2 (en) * | 2018-03-07 | 2021-09-07 | Applejack 199 L.P. | Multi-probe gauge for slab characterization |
| US11049720B2 (en) * | 2018-10-19 | 2021-06-29 | Kla Corporation | Removable opaque coating for accurate optical topography measurements on top surfaces of transparent films |
| EP3918384A1 (en) * | 2019-01-31 | 2021-12-08 | King Abdullah University of Science and Technology | Light processing device based on multilayer nano-elements |
| US20250044073A1 (en) * | 2023-08-04 | 2025-02-06 | Orbotech Ltd. | Thin film thickness adjustments for three-dimensional interferometric measurements |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200909845A (en) * | 2007-06-28 | 2009-03-01 | Microsharp Corp Ltd | Optical film |
| TW200938501A (en) * | 2007-11-02 | 2009-09-16 | Agc Flat Glass Na Inc | Transparent conductive oxide coating for thin film photovoltaic applications and methods of making the same |
| TW201638153A (zh) * | 2015-03-24 | 2016-11-01 | Konica Minolta Inc | 聚醯亞胺系光學薄膜、其製造方法及有機電致發光顯示器 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5042949A (en) | 1989-03-17 | 1991-08-27 | Greenberg Jeffrey S | Optical profiler for films and substrates |
| US5129724A (en) * | 1991-01-29 | 1992-07-14 | Wyko Corporation | Apparatus and method for simultaneous measurement of film thickness and surface height variation for film-substrate sample |
| US7324214B2 (en) * | 2003-03-06 | 2008-01-29 | Zygo Corporation | Interferometer and method for measuring characteristics of optically unresolved surface features |
| US6847458B2 (en) | 2003-03-20 | 2005-01-25 | Phase Shift Technology, Inc. | Method and apparatus for measuring the shape and thickness variation of polished opaque plates |
| JP4192038B2 (ja) * | 2003-06-04 | 2008-12-03 | 東レエンジニアリング株式会社 | 表面形状および/または膜厚測定方法及びその装置 |
| US7292346B2 (en) * | 2003-09-15 | 2007-11-06 | Zygo Corporation | Triangulation methods and systems for profiling surfaces through a thin film coating |
| CA2559324A1 (en) * | 2004-03-11 | 2005-09-22 | Nano-Or Technologies (Israel) Ltd. | Methods and apparatus for wavefront manipulations and improved 3-d measurements |
| US7595891B2 (en) * | 2005-07-09 | 2009-09-29 | Kla-Tencor Corporation | Measurement of the top surface of an object with/without transparent thin films in white light interferometry |
| US8068234B2 (en) | 2009-02-18 | 2011-11-29 | Kla-Tencor Corporation | Method and apparatus for measuring shape or thickness information of a substrate |
| US8395191B2 (en) * | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
| CN102483582B (zh) | 2009-08-24 | 2016-01-20 | Asml荷兰有限公司 | 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底 |
| MY186210A (en) | 2010-07-23 | 2021-06-30 | First Solar Inc | In-line metrology system and method |
| US20120089365A1 (en) * | 2010-10-08 | 2012-04-12 | Zygo Corporation | Data interpolation methods for metrology of surfaces, films and underresolved structures |
| US8818754B2 (en) * | 2011-04-22 | 2014-08-26 | Nanometrics Incorporated | Thin films and surface topography measurement using reduced library |
| US8552369B2 (en) * | 2011-05-03 | 2013-10-08 | International Business Machines Corporation | Obtaining elemental concentration profile of sample |
| US9385058B1 (en) * | 2012-12-29 | 2016-07-05 | Monolithic 3D Inc. | Semiconductor device and structure |
| US20140293291A1 (en) | 2013-04-01 | 2014-10-02 | Kla-Tencor Corporation | Wafer Shape and Thickness Measurement System Utilizing Shearing Interferometers |
| US9189705B2 (en) * | 2013-08-08 | 2015-11-17 | JSMSW Technology LLC | Phase-controlled model-based overlay measurement systems and methods |
| JP5871242B2 (ja) * | 2013-10-30 | 2016-03-01 | レーザーテック株式会社 | 膜厚測定装置及び膜厚測定方法 |
| JP6321579B2 (ja) | 2015-06-01 | 2018-05-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム |
| EP3150959B1 (en) * | 2015-10-02 | 2018-12-26 | Soitec | Method for measuring thickness variations in a layer of a multilayer semiconductor structure |
-
2017
- 2017-07-13 US US15/649,259 patent/US10571248B2/en active Active
-
2018
- 2018-01-05 JP JP2019537105A patent/JP6917462B2/ja active Active
- 2018-01-05 KR KR1020197022676A patent/KR102301560B1/ko active Active
- 2018-01-05 EP EP18735858.5A patent/EP3549159B1/en active Active
- 2018-01-05 SG SG11201906177WA patent/SG11201906177WA/en unknown
- 2018-01-05 CN CN201880011565.6A patent/CN110419098B/zh active Active
- 2018-01-05 WO PCT/US2018/012673 patent/WO2018129385A1/en not_active Ceased
- 2018-01-08 TW TW107100588A patent/TWI752146B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200909845A (en) * | 2007-06-28 | 2009-03-01 | Microsharp Corp Ltd | Optical film |
| TW200938501A (en) * | 2007-11-02 | 2009-09-16 | Agc Flat Glass Na Inc | Transparent conductive oxide coating for thin film photovoltaic applications and methods of making the same |
| TW201638153A (zh) * | 2015-03-24 | 2016-11-01 | Konica Minolta Inc | 聚醯亞胺系光學薄膜、其製造方法及有機電致發光顯示器 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI793321B (zh) * | 2018-05-18 | 2023-02-21 | 日商大塚電子股份有限公司 | 光學量測裝置及光學量測方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018129385A1 (en) | 2018-07-12 |
| US20180195855A1 (en) | 2018-07-12 |
| KR20190097281A (ko) | 2019-08-20 |
| TW201839876A (zh) | 2018-11-01 |
| CN110419098B (zh) | 2021-02-02 |
| CN110419098A (zh) | 2019-11-05 |
| EP3549159A1 (en) | 2019-10-09 |
| JP2020503526A (ja) | 2020-01-30 |
| US10571248B2 (en) | 2020-02-25 |
| JP6917462B2 (ja) | 2021-08-11 |
| EP3549159A4 (en) | 2020-09-09 |
| EP3549159B1 (en) | 2024-08-07 |
| KR102301560B1 (ko) | 2021-09-10 |
| SG11201906177WA (en) | 2019-08-27 |
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