KR102294584B1 - 치환된 아릴 오늄 물질 - Google Patents

치환된 아릴 오늄 물질 Download PDF

Info

Publication number
KR102294584B1
KR102294584B1 KR1020140129438A KR20140129438A KR102294584B1 KR 102294584 B1 KR102294584 B1 KR 102294584B1 KR 1020140129438 A KR1020140129438 A KR 1020140129438A KR 20140129438 A KR20140129438 A KR 20140129438A KR 102294584 B1 KR102294584 B1 KR 102294584B1
Authority
KR
South Korea
Prior art keywords
photoresist composition
formula
hydrogen
group
optionally substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020140129438A
Other languages
English (en)
Korean (ko)
Other versions
KR20150035454A (ko
Inventor
폴 제이. 라봄
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 filed Critical 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
Publication of KR20150035454A publication Critical patent/KR20150035454A/ko
Application granted granted Critical
Publication of KR102294584B1 publication Critical patent/KR102294584B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D409/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms
    • C07D409/02—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings
    • C07D409/10—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a carbon chain containing aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
    • C07C323/50—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and carboxyl groups bound to the same carbon skeleton
    • C07C323/62—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and carboxyl groups bound to the same carbon skeleton having the sulfur atom of at least one of the thio groups bound to a carbon atom of a six-membered aromatic ring of the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/76—Dibenzothiophenes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D335/00—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
    • C07D335/04—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D335/10—Dibenzothiopyrans; Hydrogenated dibenzothiopyrans
    • C07D335/12—Thioxanthenes
    • C07D335/14—Thioxanthenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached in position 9
    • C07D335/16—Oxygen atoms, e.g. thioxanthones
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07J—STEROIDS
    • C07J31/00—Normal steroids containing one or more sulfur atoms not belonging to a hetero ring
    • C07J31/006—Normal steroids containing one or more sulfur atoms not belonging to a hetero ring not covered by C07J31/003
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07J—STEROIDS
    • C07J9/00—Normal steroids containing carbon, hydrogen, halogen or oxygen substituted in position 17 beta by a chain of more than two carbon atoms, e.g. cholane, cholestane, coprostane
    • C07J9/005—Normal steroids containing carbon, hydrogen, halogen or oxygen substituted in position 17 beta by a chain of more than two carbon atoms, e.g. cholane, cholestane, coprostane containing a carboxylic function directly attached or attached by a chain containing only carbon atoms to the cyclopenta[a]hydrophenanthrene skeleton
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020140129438A 2013-09-27 2014-09-26 치환된 아릴 오늄 물질 Active KR102294584B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/040,587 2013-09-27
US14/040,587 US10179778B2 (en) 2013-09-27 2013-09-27 Substituted aryl onium materials

Publications (2)

Publication Number Publication Date
KR20150035454A KR20150035454A (ko) 2015-04-06
KR102294584B1 true KR102294584B1 (ko) 2021-08-26

Family

ID=52740497

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140129438A Active KR102294584B1 (ko) 2013-09-27 2014-09-26 치환된 아릴 오늄 물질

Country Status (5)

Country Link
US (1) US10179778B2 (enExample)
JP (1) JP6598445B2 (enExample)
KR (1) KR102294584B1 (enExample)
CN (1) CN104570602B (enExample)
TW (1) TWI671283B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9304394B2 (en) * 2013-09-27 2016-04-05 Rohm And Haas Electronic Materials, Llc Aryl acetate onium materials
US9606434B2 (en) * 2014-10-10 2017-03-28 Rohm And Haas Electronic Materials, Llc Polymer comprising repeat units with photoacid-generating functionality and base-solubility-enhancing functionality, and associated photoresist composition and electronic device forming method
US9551930B2 (en) 2014-10-10 2017-01-24 Rohm And Haas Electronic Materials Llc Photoresist composition and associated method of forming an electronic device
KR101944290B1 (ko) 2014-12-05 2019-04-17 도요 고세이 고교 가부시키가이샤 설폰산 유도체, 그것을 사용한 광산발생제, 레지스트 조성물 및 디바이스의 제조 방법
JP7204343B2 (ja) 2017-06-06 2023-01-16 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP7556709B2 (ja) * 2019-07-01 2024-09-26 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7618398B2 (ja) * 2019-07-01 2025-01-21 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7556708B2 (ja) * 2019-07-01 2024-09-26 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2021008455A (ja) * 2019-07-01 2021-01-28 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7627551B2 (ja) * 2019-07-01 2025-02-06 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US12140866B2 (en) 2020-12-31 2024-11-12 Rohm And Haas Electronic Materials Llc Photoacid generators, photoresist compositions, and pattern formation methods
WO2025197401A1 (ja) * 2024-03-22 2025-09-25 Jsr株式会社 感放射線性組成物及びレジストパターン形成方法
WO2025234401A1 (ja) * 2024-05-08 2025-11-13 Jsr株式会社 感放射線性組成物及びレジストパターン形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004361577A (ja) * 2003-06-03 2004-12-24 Fuji Photo Film Co Ltd 感光性組成物

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4287355A (en) 1979-10-26 1981-09-01 Sandoz, Inc. Carboxyl-(phenyl or tolyl)-sulfonium salts
JPH11279213A (ja) * 1998-03-30 1999-10-12 Nippon Soda Co Ltd オニウム塩化合物およびそれを含有する光硬化性組成物
US7214465B2 (en) * 2002-01-10 2007-05-08 Fujifilm Corporation Positive photosensitive composition
JP4083053B2 (ja) * 2003-03-31 2008-04-30 富士フイルム株式会社 ポジ型レジスト組成物
JP2005274647A (ja) * 2004-03-23 2005-10-06 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4866605B2 (ja) * 2005-12-28 2012-02-01 富士フイルム株式会社 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
JP2007293250A (ja) * 2006-03-27 2007-11-08 Fujifilm Corp ポジ型レジスト組成物およびそれを用いたパターン形成方法
WO2008056795A1 (en) * 2006-11-10 2008-05-15 Jsr Corporation Polymerizable sulfonic acid onium salt and resin
TWI471298B (zh) 2009-05-28 2015-02-01 Sumitomo Chemical Co 鹽及含有該鹽之光阻組成物
JP5618877B2 (ja) 2010-07-15 2014-11-05 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物及び酸発生剤
JP5449276B2 (ja) * 2011-09-02 2014-03-19 富士フイルム株式会社 感光性組成物に用いられる化合物
TWI545118B (zh) 2012-09-15 2016-08-11 羅門哈斯電子材料有限公司 酸產生劑化合物及包含該化合物之光阻劑
JP6144164B2 (ja) 2012-09-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ オニウム化合物およびその合成方法
US9304394B2 (en) * 2013-09-27 2016-04-05 Rohm And Haas Electronic Materials, Llc Aryl acetate onium materials

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004361577A (ja) * 2003-06-03 2004-12-24 Fuji Photo Film Co Ltd 感光性組成物

Also Published As

Publication number Publication date
US10179778B2 (en) 2019-01-15
TWI671283B (zh) 2019-09-11
CN104570602B (zh) 2019-12-10
JP2015091935A (ja) 2015-05-14
JP6598445B2 (ja) 2019-10-30
TW201524947A (zh) 2015-07-01
US20150093708A1 (en) 2015-04-02
CN104570602A (zh) 2015-04-29
KR20150035454A (ko) 2015-04-06

Similar Documents

Publication Publication Date Title
KR102294584B1 (ko) 치환된 아릴 오늄 물질
KR101997510B1 (ko) 다수의 산 발생제 화합물을 포함하는 포토레지스트
KR101997513B1 (ko) 산 발생제 화합물 및 이를 포함하는 포토레지스트
KR102162623B1 (ko) 산 발생제 및 이를 포함하는 포토레지스트
KR102319656B1 (ko) 아릴 아세테이트 오늄 물질
CN103728836B (zh) 生酸剂化合物和含有其的光致抗蚀剂组合物
KR102204530B1 (ko) 산 발생제 및 이를 포함하는 포토레지스트
JP6716643B2 (ja) 酸発生剤化合物及びそれを含むフォトレジスト
KR102012203B1 (ko) 오늄 화합물 및 그의 합성방법

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20140926

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20190920

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20140926

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20201124

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20210527

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20210823

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20210823

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20240722

Start annual number: 4

End annual number: 4