JP6598445B2 - 置換アリールオニウム材料 - Google Patents
置換アリールオニウム材料 Download PDFInfo
- Publication number
- JP6598445B2 JP6598445B2 JP2014197477A JP2014197477A JP6598445B2 JP 6598445 B2 JP6598445 B2 JP 6598445B2 JP 2014197477 A JP2014197477 A JP 2014197477A JP 2014197477 A JP2014197477 A JP 2014197477A JP 6598445 B2 JP6598445 B2 JP 6598445B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist composition
- hydrogen
- group
- optionally substituted
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 0 C[C@](CCC(OCCC(C([*-])=*)(F)F)=O)[C@@](CC[C@]1[C@@]([C@](C2)[C@@](C)(CCC(C3)=O)C3C3)C3=O)[C@@]1(C)C2=O Chemical compound C[C@](CCC(OCCC(C([*-])=*)(F)F)=O)[C@@](CC[C@]1[C@@]([C@](C2)[C@@](C)(CCC(C3)=O)C3C3)C3=O)[C@@]1(C)C2=O 0.000 description 2
- PGRNTQCDCOGSFC-UHFFFAOYSA-N CC1(C2CC(C3)CC1CC3C2)OC(COC(C(C(c1ccccc1)O)c1cc(S(C)(c2ccccc2)c2c(C)cccc2)ccc1O)=O)=O Chemical compound CC1(C2CC(C3)CC1CC3C2)OC(COC(C(C(c1ccccc1)O)c1cc(S(C)(c2ccccc2)c2c(C)cccc2)ccc1O)=O)=O PGRNTQCDCOGSFC-UHFFFAOYSA-N 0.000 description 1
- OPMJKIHDFJXQQM-UHFFFAOYSA-N CC1(C2CC(C3)CC1CC3C2)OC(COC(CC(C=C(CC1)[S+]2c3ccccc3-c3c2cccc3)=C1OC)=O)=O Chemical compound CC1(C2CC(C3)CC1CC3C2)OC(COC(CC(C=C(CC1)[S+]2c3ccccc3-c3c2cccc3)=C1OC)=O)=O OPMJKIHDFJXQQM-UHFFFAOYSA-N 0.000 description 1
- ANMLBHRLMZPQRG-UHFFFAOYSA-N CCC1(CCCC1)OC(CC(C(OCC(OC1(C)C(C2)C3(C4)C1CC4CC2C3)=O)=O)c1cc([Si-]2c3ccccc3-c3c2cccc3)ccc1OC)=O Chemical compound CCC1(CCCC1)OC(CC(C(OCC(OC1(C)C(C2)C3(C4)C1CC4CC2C3)=O)=O)c1cc([Si-]2c3ccccc3-c3c2cccc3)ccc1OC)=O ANMLBHRLMZPQRG-UHFFFAOYSA-N 0.000 description 1
- FEJIMDXQTLORKT-UHFFFAOYSA-N CCC1(CCCC1)OC(CC(C(OCC(OC1(C)C2CC(C3)CC1CC3C2)=O)=O)c1cc([S+]2c3ccccc3-c3c2cccc3)ccc1OC)=O Chemical compound CCC1(CCCC1)OC(CC(C(OCC(OC1(C)C2CC(C3)CC1CC3C2)=O)=O)c1cc([S+]2c3ccccc3-c3c2cccc3)ccc1OC)=O FEJIMDXQTLORKT-UHFFFAOYSA-N 0.000 description 1
- JRLPEMVDPFPYPJ-UHFFFAOYSA-N CCc1ccc(C)cc1 Chemical compound CCc1ccc(C)cc1 JRLPEMVDPFPYPJ-UHFFFAOYSA-N 0.000 description 1
- GXXXUZIRGXYDFP-UHFFFAOYSA-N Cc1ccc(CC(O)=O)cc1 Chemical compound Cc1ccc(CC(O)=O)cc1 GXXXUZIRGXYDFP-UHFFFAOYSA-N 0.000 description 1
- JGTNAGYHADQMCM-UHFFFAOYSA-N OS(C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)(=O)=O Chemical compound OS(C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)(=O)=O JGTNAGYHADQMCM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D409/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms
- C07D409/02—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings
- C07D409/10—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a carbon chain containing aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
- C07C323/50—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and carboxyl groups bound to the same carbon skeleton
- C07C323/62—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and carboxyl groups bound to the same carbon skeleton having the sulfur atom of at least one of the thio groups bound to a carbon atom of a six-membered aromatic ring of the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
- C07C381/12—Sulfonium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/76—Dibenzothiophenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D335/00—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
- C07D335/04—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D335/10—Dibenzothiopyrans; Hydrogenated dibenzothiopyrans
- C07D335/12—Thioxanthenes
- C07D335/14—Thioxanthenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached in position 9
- C07D335/16—Oxygen atoms, e.g. thioxanthones
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07J—STEROIDS
- C07J31/00—Normal steroids containing one or more sulfur atoms not belonging to a hetero ring
- C07J31/006—Normal steroids containing one or more sulfur atoms not belonging to a hetero ring not covered by C07J31/003
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07J—STEROIDS
- C07J9/00—Normal steroids containing carbon, hydrogen, halogen or oxygen substituted in position 17 beta by a chain of more than two carbon atoms, e.g. cholane, cholestane, coprostane
- C07J9/005—Normal steroids containing carbon, hydrogen, halogen or oxygen substituted in position 17 beta by a chain of more than two carbon atoms, e.g. cholane, cholestane, coprostane containing a carboxylic function directly attached or attached by a chain containing only carbon atoms to the cyclopenta[a]hydrophenanthrene skeleton
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/040,587 | 2013-09-27 | ||
| US14/040,587 US10179778B2 (en) | 2013-09-27 | 2013-09-27 | Substituted aryl onium materials |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015091935A JP2015091935A (ja) | 2015-05-14 |
| JP2015091935A5 JP2015091935A5 (enExample) | 2019-03-14 |
| JP6598445B2 true JP6598445B2 (ja) | 2019-10-30 |
Family
ID=52740497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014197477A Active JP6598445B2 (ja) | 2013-09-27 | 2014-09-26 | 置換アリールオニウム材料 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10179778B2 (enExample) |
| JP (1) | JP6598445B2 (enExample) |
| KR (1) | KR102294584B1 (enExample) |
| CN (1) | CN104570602B (enExample) |
| TW (1) | TWI671283B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9304394B2 (en) * | 2013-09-27 | 2016-04-05 | Rohm And Haas Electronic Materials, Llc | Aryl acetate onium materials |
| US9606434B2 (en) * | 2014-10-10 | 2017-03-28 | Rohm And Haas Electronic Materials, Llc | Polymer comprising repeat units with photoacid-generating functionality and base-solubility-enhancing functionality, and associated photoresist composition and electronic device forming method |
| US9551930B2 (en) | 2014-10-10 | 2017-01-24 | Rohm And Haas Electronic Materials Llc | Photoresist composition and associated method of forming an electronic device |
| KR101944290B1 (ko) | 2014-12-05 | 2019-04-17 | 도요 고세이 고교 가부시키가이샤 | 설폰산 유도체, 그것을 사용한 광산발생제, 레지스트 조성물 및 디바이스의 제조 방법 |
| JP7204343B2 (ja) | 2017-06-06 | 2023-01-16 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP7556709B2 (ja) * | 2019-07-01 | 2024-09-26 | 住友化学株式会社 | カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| JP7618398B2 (ja) * | 2019-07-01 | 2025-01-21 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| JP7556708B2 (ja) * | 2019-07-01 | 2024-09-26 | 住友化学株式会社 | カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| JP2021008455A (ja) * | 2019-07-01 | 2021-01-28 | 住友化学株式会社 | カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| JP7627551B2 (ja) * | 2019-07-01 | 2025-02-06 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| US12140866B2 (en) | 2020-12-31 | 2024-11-12 | Rohm And Haas Electronic Materials Llc | Photoacid generators, photoresist compositions, and pattern formation methods |
| WO2025197401A1 (ja) * | 2024-03-22 | 2025-09-25 | Jsr株式会社 | 感放射線性組成物及びレジストパターン形成方法 |
| WO2025234401A1 (ja) * | 2024-05-08 | 2025-11-13 | Jsr株式会社 | 感放射線性組成物及びレジストパターン形成方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4287355A (en) | 1979-10-26 | 1981-09-01 | Sandoz, Inc. | Carboxyl-(phenyl or tolyl)-sulfonium salts |
| JPH11279213A (ja) * | 1998-03-30 | 1999-10-12 | Nippon Soda Co Ltd | オニウム塩化合物およびそれを含有する光硬化性組成物 |
| US7214465B2 (en) * | 2002-01-10 | 2007-05-08 | Fujifilm Corporation | Positive photosensitive composition |
| JP4083053B2 (ja) * | 2003-03-31 | 2008-04-30 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| JP4399192B2 (ja) * | 2003-06-03 | 2010-01-13 | 富士フイルム株式会社 | 感光性組成物 |
| JP2005274647A (ja) * | 2004-03-23 | 2005-10-06 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4866605B2 (ja) * | 2005-12-28 | 2012-02-01 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物 |
| JP2007293250A (ja) * | 2006-03-27 | 2007-11-08 | Fujifilm Corp | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
| WO2008056795A1 (en) * | 2006-11-10 | 2008-05-15 | Jsr Corporation | Polymerizable sulfonic acid onium salt and resin |
| TWI471298B (zh) | 2009-05-28 | 2015-02-01 | Sumitomo Chemical Co | 鹽及含有該鹽之光阻組成物 |
| JP5618877B2 (ja) | 2010-07-15 | 2014-11-05 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、新規な化合物及び酸発生剤 |
| JP5449276B2 (ja) * | 2011-09-02 | 2014-03-19 | 富士フイルム株式会社 | 感光性組成物に用いられる化合物 |
| TWI545118B (zh) | 2012-09-15 | 2016-08-11 | 羅門哈斯電子材料有限公司 | 酸產生劑化合物及包含該化合物之光阻劑 |
| JP6144164B2 (ja) | 2012-09-15 | 2017-06-07 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | オニウム化合物およびその合成方法 |
| US9304394B2 (en) * | 2013-09-27 | 2016-04-05 | Rohm And Haas Electronic Materials, Llc | Aryl acetate onium materials |
-
2013
- 2013-09-27 US US14/040,587 patent/US10179778B2/en active Active
-
2014
- 2014-09-26 TW TW103133462A patent/TWI671283B/zh active
- 2014-09-26 JP JP2014197477A patent/JP6598445B2/ja active Active
- 2014-09-26 KR KR1020140129438A patent/KR102294584B1/ko active Active
- 2014-09-29 CN CN201410755977.4A patent/CN104570602B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US10179778B2 (en) | 2019-01-15 |
| TWI671283B (zh) | 2019-09-11 |
| CN104570602B (zh) | 2019-12-10 |
| KR102294584B1 (ko) | 2021-08-26 |
| JP2015091935A (ja) | 2015-05-14 |
| TW201524947A (zh) | 2015-07-01 |
| US20150093708A1 (en) | 2015-04-02 |
| CN104570602A (zh) | 2015-04-29 |
| KR20150035454A (ko) | 2015-04-06 |
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