JP6598445B2 - 置換アリールオニウム材料 - Google Patents

置換アリールオニウム材料 Download PDF

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Publication number
JP6598445B2
JP6598445B2 JP2014197477A JP2014197477A JP6598445B2 JP 6598445 B2 JP6598445 B2 JP 6598445B2 JP 2014197477 A JP2014197477 A JP 2014197477A JP 2014197477 A JP2014197477 A JP 2014197477A JP 6598445 B2 JP6598445 B2 JP 6598445B2
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Japan
Prior art keywords
photoresist composition
hydrogen
group
optionally substituted
photoresist
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JP2014197477A
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English (en)
Japanese (ja)
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JP2015091935A (ja
JP2015091935A5 (enExample
Inventor
ポール・ジェイ・ラボーメ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
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Publication of JP2015091935A publication Critical patent/JP2015091935A/ja
Publication of JP2015091935A5 publication Critical patent/JP2015091935A5/ja
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D409/00Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms
    • C07D409/02Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings
    • C07D409/10Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a carbon chain containing aromatic rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C323/00Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
    • C07C323/50Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and carboxyl groups bound to the same carbon skeleton
    • C07C323/62Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and carboxyl groups bound to the same carbon skeleton having the sulfur atom of at least one of the thio groups bound to a carbon atom of a six-membered aromatic ring of the carbon skeleton
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12Sulfonium compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D333/00Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/76Dibenzothiophenes
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D335/00Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
    • C07D335/04Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D335/10Dibenzothiopyrans; Hydrogenated dibenzothiopyrans
    • C07D335/12Thioxanthenes
    • C07D335/14Thioxanthenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached in position 9
    • C07D335/16Oxygen atoms, e.g. thioxanthones
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07JSTEROIDS
    • C07J31/00Normal steroids containing one or more sulfur atoms not belonging to a hetero ring
    • C07J31/006Normal steroids containing one or more sulfur atoms not belonging to a hetero ring not covered by C07J31/003
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07JSTEROIDS
    • C07J9/00Normal steroids containing carbon, hydrogen, halogen or oxygen substituted in position 17 beta by a chain of more than two carbon atoms, e.g. cholane, cholestane, coprostane
    • C07J9/005Normal steroids containing carbon, hydrogen, halogen or oxygen substituted in position 17 beta by a chain of more than two carbon atoms, e.g. cholane, cholestane, coprostane containing a carboxylic function directly attached or attached by a chain containing only carbon atoms to the cyclopenta[a]hydrophenanthrene skeleton
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2014197477A 2013-09-27 2014-09-26 置換アリールオニウム材料 Active JP6598445B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/040,587 2013-09-27
US14/040,587 US10179778B2 (en) 2013-09-27 2013-09-27 Substituted aryl onium materials

Publications (3)

Publication Number Publication Date
JP2015091935A JP2015091935A (ja) 2015-05-14
JP2015091935A5 JP2015091935A5 (enExample) 2019-03-14
JP6598445B2 true JP6598445B2 (ja) 2019-10-30

Family

ID=52740497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014197477A Active JP6598445B2 (ja) 2013-09-27 2014-09-26 置換アリールオニウム材料

Country Status (5)

Country Link
US (1) US10179778B2 (enExample)
JP (1) JP6598445B2 (enExample)
KR (1) KR102294584B1 (enExample)
CN (1) CN104570602B (enExample)
TW (1) TWI671283B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9304394B2 (en) * 2013-09-27 2016-04-05 Rohm And Haas Electronic Materials, Llc Aryl acetate onium materials
US9606434B2 (en) * 2014-10-10 2017-03-28 Rohm And Haas Electronic Materials, Llc Polymer comprising repeat units with photoacid-generating functionality and base-solubility-enhancing functionality, and associated photoresist composition and electronic device forming method
US9551930B2 (en) 2014-10-10 2017-01-24 Rohm And Haas Electronic Materials Llc Photoresist composition and associated method of forming an electronic device
KR101944290B1 (ko) 2014-12-05 2019-04-17 도요 고세이 고교 가부시키가이샤 설폰산 유도체, 그것을 사용한 광산발생제, 레지스트 조성물 및 디바이스의 제조 방법
JP7204343B2 (ja) 2017-06-06 2023-01-16 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP7556709B2 (ja) * 2019-07-01 2024-09-26 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7618398B2 (ja) * 2019-07-01 2025-01-21 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7556708B2 (ja) * 2019-07-01 2024-09-26 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2021008455A (ja) * 2019-07-01 2021-01-28 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7627551B2 (ja) * 2019-07-01 2025-02-06 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US12140866B2 (en) 2020-12-31 2024-11-12 Rohm And Haas Electronic Materials Llc Photoacid generators, photoresist compositions, and pattern formation methods
WO2025197401A1 (ja) * 2024-03-22 2025-09-25 Jsr株式会社 感放射線性組成物及びレジストパターン形成方法
WO2025234401A1 (ja) * 2024-05-08 2025-11-13 Jsr株式会社 感放射線性組成物及びレジストパターン形成方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4287355A (en) 1979-10-26 1981-09-01 Sandoz, Inc. Carboxyl-(phenyl or tolyl)-sulfonium salts
JPH11279213A (ja) * 1998-03-30 1999-10-12 Nippon Soda Co Ltd オニウム塩化合物およびそれを含有する光硬化性組成物
US7214465B2 (en) * 2002-01-10 2007-05-08 Fujifilm Corporation Positive photosensitive composition
JP4083053B2 (ja) * 2003-03-31 2008-04-30 富士フイルム株式会社 ポジ型レジスト組成物
JP4399192B2 (ja) * 2003-06-03 2010-01-13 富士フイルム株式会社 感光性組成物
JP2005274647A (ja) * 2004-03-23 2005-10-06 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4866605B2 (ja) * 2005-12-28 2012-02-01 富士フイルム株式会社 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
JP2007293250A (ja) * 2006-03-27 2007-11-08 Fujifilm Corp ポジ型レジスト組成物およびそれを用いたパターン形成方法
WO2008056795A1 (en) * 2006-11-10 2008-05-15 Jsr Corporation Polymerizable sulfonic acid onium salt and resin
TWI471298B (zh) 2009-05-28 2015-02-01 Sumitomo Chemical Co 鹽及含有該鹽之光阻組成物
JP5618877B2 (ja) 2010-07-15 2014-11-05 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物及び酸発生剤
JP5449276B2 (ja) * 2011-09-02 2014-03-19 富士フイルム株式会社 感光性組成物に用いられる化合物
TWI545118B (zh) 2012-09-15 2016-08-11 羅門哈斯電子材料有限公司 酸產生劑化合物及包含該化合物之光阻劑
JP6144164B2 (ja) 2012-09-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC オニウム化合物およびその合成方法
US9304394B2 (en) * 2013-09-27 2016-04-05 Rohm And Haas Electronic Materials, Llc Aryl acetate onium materials

Also Published As

Publication number Publication date
US10179778B2 (en) 2019-01-15
TWI671283B (zh) 2019-09-11
CN104570602B (zh) 2019-12-10
KR102294584B1 (ko) 2021-08-26
JP2015091935A (ja) 2015-05-14
TW201524947A (zh) 2015-07-01
US20150093708A1 (en) 2015-04-02
CN104570602A (zh) 2015-04-29
KR20150035454A (ko) 2015-04-06

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