TWI671283B - 經取代之芳基鎓材料 - Google Patents

經取代之芳基鎓材料 Download PDF

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Publication number
TWI671283B
TWI671283B TW103133462A TW103133462A TWI671283B TW I671283 B TWI671283 B TW I671283B TW 103133462 A TW103133462 A TW 103133462A TW 103133462 A TW103133462 A TW 103133462A TW I671283 B TWI671283 B TW I671283B
Authority
TW
Taiwan
Prior art keywords
group
optionally substituted
photoresist composition
hydrogen
acid
Prior art date
Application number
TW103133462A
Other languages
English (en)
Chinese (zh)
Other versions
TW201524947A (zh
Inventor
Paul J. Labeaume
保羅J 拉貝美
Original Assignee
Rohm And Haas Electronic Materials Llc
羅門哈斯電子材料有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm And Haas Electronic Materials Llc, 羅門哈斯電子材料有限公司 filed Critical Rohm And Haas Electronic Materials Llc
Publication of TW201524947A publication Critical patent/TW201524947A/zh
Application granted granted Critical
Publication of TWI671283B publication Critical patent/TWI671283B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D409/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms
    • C07D409/02—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings
    • C07D409/10—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a carbon chain containing aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
    • C07C323/50—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and carboxyl groups bound to the same carbon skeleton
    • C07C323/62—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and carboxyl groups bound to the same carbon skeleton having the sulfur atom of at least one of the thio groups bound to a carbon atom of a six-membered aromatic ring of the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/76—Dibenzothiophenes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D335/00—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
    • C07D335/04—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D335/10—Dibenzothiopyrans; Hydrogenated dibenzothiopyrans
    • C07D335/12—Thioxanthenes
    • C07D335/14—Thioxanthenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached in position 9
    • C07D335/16—Oxygen atoms, e.g. thioxanthones
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07J—STEROIDS
    • C07J31/00—Normal steroids containing one or more sulfur atoms not belonging to a hetero ring
    • C07J31/006—Normal steroids containing one or more sulfur atoms not belonging to a hetero ring not covered by C07J31/003
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07J—STEROIDS
    • C07J9/00—Normal steroids containing carbon, hydrogen, halogen or oxygen substituted in position 17 beta by a chain of more than two carbon atoms, e.g. cholane, cholestane, coprostane
    • C07J9/005—Normal steroids containing carbon, hydrogen, halogen or oxygen substituted in position 17 beta by a chain of more than two carbon atoms, e.g. cholane, cholestane, coprostane containing a carboxylic function directly attached or attached by a chain containing only carbon atoms to the cyclopenta[a]hydrophenanthrene skeleton
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW103133462A 2013-09-27 2014-09-26 經取代之芳基鎓材料 TWI671283B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/040,587 2013-09-27
US14/040,587 US10179778B2 (en) 2013-09-27 2013-09-27 Substituted aryl onium materials

Publications (2)

Publication Number Publication Date
TW201524947A TW201524947A (zh) 2015-07-01
TWI671283B true TWI671283B (zh) 2019-09-11

Family

ID=52740497

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103133462A TWI671283B (zh) 2013-09-27 2014-09-26 經取代之芳基鎓材料

Country Status (5)

Country Link
US (1) US10179778B2 (enExample)
JP (1) JP6598445B2 (enExample)
KR (1) KR102294584B1 (enExample)
CN (1) CN104570602B (enExample)
TW (1) TWI671283B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9304394B2 (en) * 2013-09-27 2016-04-05 Rohm And Haas Electronic Materials, Llc Aryl acetate onium materials
US9551930B2 (en) 2014-10-10 2017-01-24 Rohm And Haas Electronic Materials Llc Photoresist composition and associated method of forming an electronic device
US9606434B2 (en) * 2014-10-10 2017-03-28 Rohm And Haas Electronic Materials, Llc Polymer comprising repeat units with photoacid-generating functionality and base-solubility-enhancing functionality, and associated photoresist composition and electronic device forming method
KR101944290B1 (ko) * 2014-12-05 2019-04-17 도요 고세이 고교 가부시키가이샤 설폰산 유도체, 그것을 사용한 광산발생제, 레지스트 조성물 및 디바이스의 제조 방법
JP7204343B2 (ja) 2017-06-06 2023-01-16 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP2021008455A (ja) * 2019-07-01 2021-01-28 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7618398B2 (ja) * 2019-07-01 2025-01-21 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7556709B2 (ja) * 2019-07-01 2024-09-26 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7556708B2 (ja) * 2019-07-01 2024-09-26 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7627551B2 (ja) * 2019-07-01 2025-02-06 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US12140866B2 (en) * 2020-12-31 2024-11-12 Rohm And Haas Electronic Materials Llc Photoacid generators, photoresist compositions, and pattern formation methods
WO2025197401A1 (ja) * 2024-03-22 2025-09-25 Jsr株式会社 感放射線性組成物及びレジストパターン形成方法
TW202607054A (zh) * 2024-05-08 2026-02-16 日商Jsr股份有限公司 感放射線性樹脂組成物及抗蝕劑圖案形成方法
WO2025253859A1 (ja) * 2024-06-05 2025-12-11 Jsr株式会社 感放射線性組成物、パターン形成方法及びオニウム塩化合物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004361577A (ja) * 2003-06-03 2004-12-24 Fuji Photo Film Co Ltd 感光性組成物
US20070148592A1 (en) * 2005-12-28 2007-06-28 Fujifilm Corporation Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition
US20100063232A1 (en) * 2006-11-10 2010-03-11 Jsr Corporation Polymerizable sulfonic acid onium salt and resin

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4287355A (en) 1979-10-26 1981-09-01 Sandoz, Inc. Carboxyl-(phenyl or tolyl)-sulfonium salts
JPH11279213A (ja) * 1998-03-30 1999-10-12 Nippon Soda Co Ltd オニウム塩化合物およびそれを含有する光硬化性組成物
US7214465B2 (en) * 2002-01-10 2007-05-08 Fujifilm Corporation Positive photosensitive composition
JP4083053B2 (ja) * 2003-03-31 2008-04-30 富士フイルム株式会社 ポジ型レジスト組成物
JP2005274647A (ja) * 2004-03-23 2005-10-06 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2007293250A (ja) * 2006-03-27 2007-11-08 Fujifilm Corp ポジ型レジスト組成物およびそれを用いたパターン形成方法
CN101898987A (zh) 2009-05-28 2010-12-01 住友化学株式会社 盐以及含有该盐的光致抗蚀剂组合物
JP5618877B2 (ja) 2010-07-15 2014-11-05 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物及び酸発生剤
JP5449276B2 (ja) * 2011-09-02 2014-03-19 富士フイルム株式会社 感光性組成物に用いられる化合物
JP5739497B2 (ja) 2012-09-15 2015-06-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 酸発生剤化合物およびそれを含むフォトレジスト
TWI538902B (zh) 2012-09-15 2016-06-21 羅門哈斯電子材料有限公司 鎓化合物及其合成方法
US9304394B2 (en) 2013-09-27 2016-04-05 Rohm And Haas Electronic Materials, Llc Aryl acetate onium materials

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004361577A (ja) * 2003-06-03 2004-12-24 Fuji Photo Film Co Ltd 感光性組成物
US20070148592A1 (en) * 2005-12-28 2007-06-28 Fujifilm Corporation Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition
US20100063232A1 (en) * 2006-11-10 2010-03-11 Jsr Corporation Polymerizable sulfonic acid onium salt and resin

Also Published As

Publication number Publication date
JP6598445B2 (ja) 2019-10-30
KR102294584B1 (ko) 2021-08-26
US10179778B2 (en) 2019-01-15
US20150093708A1 (en) 2015-04-02
TW201524947A (zh) 2015-07-01
CN104570602B (zh) 2019-12-10
CN104570602A (zh) 2015-04-29
KR20150035454A (ko) 2015-04-06
JP2015091935A (ja) 2015-05-14

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