JP6144164B2 - オニウム化合物およびその合成方法 - Google Patents
オニウム化合物およびその合成方法 Download PDFInfo
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- JP6144164B2 JP6144164B2 JP2013190009A JP2013190009A JP6144164B2 JP 6144164 B2 JP6144164 B2 JP 6144164B2 JP 2013190009 A JP2013190009 A JP 2013190009A JP 2013190009 A JP2013190009 A JP 2013190009A JP 6144164 B2 JP6144164 B2 JP 6144164B2
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- onium
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- YHRFUJPKMIMXND-UHFFFAOYSA-N CCC1(CCCC1)OC(COC(c(cc1)cc([S+](c2ccccc22)c(ccc(C(F)(F)F)c3)c3C2=O)c1OC)=O)=O Chemical compound CCC1(CCCC1)OC(COC(c(cc1)cc([S+](c2ccccc22)c(ccc(C(F)(F)F)c3)c3C2=O)c1OC)=O)=O YHRFUJPKMIMXND-UHFFFAOYSA-N 0.000 description 2
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C303/00—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
- C07C303/32—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of salts of sulfonic acids
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
- C07C309/12—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D335/00—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
- C07D335/04—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D335/10—Dibenzothiopyrans; Hydrogenated dibenzothiopyrans
- C07D335/12—Thioxanthenes
- C07D335/14—Thioxanthenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached in position 9
- C07D335/16—Oxygen atoms, e.g. thioxanthones
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
- C08K5/45—Heterocyclic compounds having sulfur in the ring
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/56—Ring systems containing bridged rings
- C07C2603/58—Ring systems containing bridged rings containing three rings
- C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
- C07C2603/74—Adamantanes
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- Chemical Kinetics & Catalysis (AREA)
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- Polymers & Plastics (AREA)
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Description
(a)スルホネート成分が電子求引性基を含む、当該スルホネート成分を含むオニウム塩化合物を提供し;および
(b)前記オニウム塩化合物をハロゲン化物塩で処理してオニウム化合物の異なる塩を形成すること
を含む方法によって得られうるヨウ化物塩オニウム化合物が提供される。
また、
(a)スルホネート成分が電子求引性基を含む、当該スルホネート成分を含むオニウム塩を提供し;および
(b)前記スルホネート塩をハロゲン化物塩で処理してオニウム化合物のハロゲン化物塩を形成し;および
(c)前記オニウム化合物の前記ハロゲン化物塩を処理して前記オニウム化合物の異なる塩を形成すること
を含む方法によって得られうるさらなるオニウム塩化合物も提供される。
上述のように、本明細書に開示されるオニウム塩化合物は、ポジ型およびネガ型の両方の化学増幅型レジスト組成物をはじめとする、フォトレジスト組成物中の放射線感受性成分として有用である。
開始剤溶液は、65.96gの開始剤(V−65)を66gのアセトニトリル/テトラヒドロフラン(2/1 v/v)に溶解することによって調製された。重合は、水凝縮器およびフラスコ内の反応をモニターするための温度計を装備した2L三口丸底フラスコで行われた。オーバーヘッド撹拌機を用いて内容物を撹拌した。反応器にヒール溶液を入れ、その内容物を75℃に加熱した。シリンジポンプを用いて、フィード溶液および開始剤溶液が4時間にわたって反応器に供給された。次に、内容物をさらに2時間撹拌し、それにより、ヒドロキノン(2.0g)を用いて反応がクエンチされた。内容物を室温まで冷却し、10倍の(重量による)IPE/MeOH 95/5(w/w)で2回沈殿させた。得られたポリマーを、各沈殿工程の後に50℃で24時間真空乾燥させて500gのポリマーを得た。
ポジ型フォトレジスト組成物は、実施例20のポリマーの乳酸エチル中10重量%溶液21.088g、上記実施例2の酸発生剤化合物の乳酸エチル中2重量%溶液18.779g、1,1’,1’’,1’’’−(エタン−1,2−ジイルビス(アザントリイル))テトラプロパン−2−オールの乳酸エチル中0.5重量%溶液1.898g、フッ素化界面活性剤(Omnova PF656)の乳酸エチル中0.5重量%溶液0.422g、47.342gの乳酸エチルおよび29.250gの2−ヒドロキシイソ酪酸メチルエステルを一緒にすることによって調製される。配合したレジストを0.01μm PTFEフィルターに通す。こうして製造したレジストをシリコンウエハ上にスピンコーティングし、ソフトベークしてキャリア溶媒を除去し、フォトマスクを通してEUV放射線に露光する。次に、像形成したレジスト層を110℃で60秒間ベークした後、水性アルカリ組成物で現像する。
ポジ型フォトレジスト組成物は、実施例20のポリマーの乳酸エチル中10重量%溶液21.088g、上記実施例2の酸発生剤化合物の乳酸エチル中2重量%溶液19.522g、1,1’,1’’,1’’’−(エタン−1,2−ジイルビス(アザントリイル))テトラプロパン−2−オールの乳酸エチル中0.5重量%溶液1.898g、フッ素化界面活性剤(Omnova PF656)の乳酸エチル中0.5重量%溶液0.422g、46.342gの乳酸エチルおよび29.150gの2−ヒドロキシイソ酪酸メチルエステルを一緒にすることによって調製される。配合したレジストを0.01μm PTFEフィルターに通す。こうして製造したレジストをシリコンウエハ上にスピンコーティングし、ソフトベークしてキャリア溶媒を除去し、フォトマスクを通してEUV放射線に露光する。次に、像形成したレジスト層を110℃で60秒間ベークした後、水性アルカリ組成物で現像する。
Claims (2)
- (a)オニウム化合物のトリフレート塩を提供し、および
(b)前記オニウム化合物のトリフレート塩をヨウ化物塩でアニオン置換してオニウム化合物のヨウ化物塩を形成する
ことを含み、前記オニウム化合物がスルホニウムカチオンまたはヨードニウムカチオンである、オニウム化合物の異なる塩を製造する方法。 - 前記オニウム化合物の前記ヨウ化物塩をさらにアニオン置換して、前記オニウム化合物の異なる塩を提供する、請求項1に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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US201261701612P | 2012-09-15 | 2012-09-15 | |
US61/701,612 | 2012-09-15 |
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JP2015209987A Division JP6343270B2 (ja) | 2012-09-15 | 2015-10-26 | オニウム化合物およびその合成方法 |
JP2017014544A Division JP2017105803A (ja) | 2012-09-15 | 2017-01-30 | オニウム化合物およびその合成方法 |
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JP2014097969A JP2014097969A (ja) | 2014-05-29 |
JP2014097969A5 JP2014097969A5 (ja) | 2015-01-29 |
JP6144164B2 true JP6144164B2 (ja) | 2017-06-07 |
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JP2013190009A Expired - Fee Related JP6144164B2 (ja) | 2012-09-15 | 2013-09-13 | オニウム化合物およびその合成方法 |
JP2015209987A Expired - Fee Related JP6343270B2 (ja) | 2012-09-15 | 2015-10-26 | オニウム化合物およびその合成方法 |
JP2017014544A Withdrawn JP2017105803A (ja) | 2012-09-15 | 2017-01-30 | オニウム化合物およびその合成方法 |
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JP2017014544A Withdrawn JP2017105803A (ja) | 2012-09-15 | 2017-01-30 | オニウム化合物およびその合成方法 |
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US (2) | US9703192B2 (ja) |
JP (3) | JP6144164B2 (ja) |
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TW (1) | TWI538902B (ja) |
Cited By (1)
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JP2016106073A (ja) * | 2012-09-15 | 2016-06-16 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | オニウム化合物およびその合成方法 |
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JP5790631B2 (ja) * | 2012-12-10 | 2015-10-07 | 信越化学工業株式会社 | スルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法、並びに該高分子化合物の製造方法 |
US10179778B2 (en) | 2013-09-27 | 2019-01-15 | Rohm And Haas Electronic Materials Llc | Substituted aryl onium materials |
WO2021199841A1 (ja) * | 2020-03-30 | 2021-10-07 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、レジスト膜、電子デバイスの製造方法 |
JP2023114439A (ja) * | 2022-02-04 | 2023-08-17 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
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JP4161497B2 (ja) * | 1999-12-24 | 2008-10-08 | Jsr株式会社 | ネガ型感放射線性樹脂組成物 |
JP4341406B2 (ja) * | 2002-03-04 | 2009-10-07 | 和光純薬工業株式会社 | ヘテロ環含有スルホニウム塩 |
US7160669B2 (en) * | 2002-10-16 | 2007-01-09 | Sumitomo Chemical Company, Limited | Chemical amplification type resist composition |
US7217492B2 (en) | 2002-12-25 | 2007-05-15 | Jsr Corporation | Onium salt compound and radiation-sensitive resin composition |
TWI412888B (zh) * | 2006-08-18 | 2013-10-21 | Sumitomo Chemical Co | 適合作為酸產生劑之鹽及含有該鹽之化學放大型正光阻組成物 |
JP5116311B2 (ja) * | 2007-02-05 | 2013-01-09 | 東洋合成工業株式会社 | スルホニウム塩 |
JP5453834B2 (ja) * | 2008-02-22 | 2014-03-26 | 住友化学株式会社 | エステル化合物及びその製造方法 |
JP5208573B2 (ja) * | 2008-05-06 | 2013-06-12 | サンアプロ株式会社 | スルホニウム塩、光酸発生剤、光硬化性組成物及びこの硬化体 |
JP5481046B2 (ja) * | 2008-08-13 | 2014-04-23 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤 |
JP5201363B2 (ja) * | 2008-08-28 | 2013-06-05 | 信越化学工業株式会社 | 重合性アニオンを有するスルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法 |
JP5469920B2 (ja) * | 2009-05-29 | 2014-04-16 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
EP2495234B1 (en) * | 2009-10-26 | 2018-06-06 | Adeka Corporation | Aromatic sulfonium salt compound |
WO2011070947A1 (ja) | 2009-12-08 | 2011-06-16 | Jsr株式会社 | 感放射線性樹脂組成物、重合体、単量体及び感放射線性樹脂組成物の製造方法 |
JP5801723B2 (ja) * | 2010-01-29 | 2015-10-28 | タカノ株式会社 | ネオポンコラノール類の製造方法 |
JP5763433B2 (ja) * | 2010-06-29 | 2015-08-12 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
JP5517811B2 (ja) * | 2010-07-26 | 2014-06-11 | サンアプロ株式会社 | 化学増幅型ネガ型フォトレジスト組成物 |
JP5960991B2 (ja) | 2011-01-28 | 2016-08-02 | 住友化学株式会社 | 塩、レジスト組成物及びレジストパターンの製造方法 |
JP5906787B2 (ja) | 2011-03-08 | 2016-04-20 | 住友化学株式会社 | 塩、レジスト組成物及びレジストパターンの製造方法 |
PT105584B (pt) * | 2011-03-28 | 2013-08-30 | Hovione Farmaciencia S A | Reagentes electrofílicos de alquilação, a sua preparação e usos |
JP5739497B2 (ja) | 2012-09-15 | 2015-06-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 酸発生剤化合物およびそれを含むフォトレジスト |
TWI538902B (zh) * | 2012-09-15 | 2016-06-21 | 羅門哈斯電子材料有限公司 | 鎓化合物及其合成方法 |
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Cited By (2)
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JP2016106073A (ja) * | 2012-09-15 | 2016-06-16 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | オニウム化合物およびその合成方法 |
JP2017105803A (ja) * | 2012-09-15 | 2017-06-15 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | オニウム化合物およびその合成方法 |
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Publication number | Publication date |
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US9703192B2 (en) | 2017-07-11 |
KR20160032074A (ko) | 2016-03-23 |
US20180052390A1 (en) | 2018-02-22 |
JP2017105803A (ja) | 2017-06-15 |
KR102012203B1 (ko) | 2019-08-20 |
CN103664870A (zh) | 2014-03-26 |
JP6343270B2 (ja) | 2018-06-13 |
TW201418199A (zh) | 2014-05-16 |
CN107266415A (zh) | 2017-10-20 |
US20140080056A1 (en) | 2014-03-20 |
JP2016106073A (ja) | 2016-06-16 |
KR20140036118A (ko) | 2014-03-25 |
JP2014097969A (ja) | 2014-05-29 |
CN103664870B (zh) | 2017-07-18 |
TWI538902B (zh) | 2016-06-21 |
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