KR102261309B1 - 전자 부품 및 그 제조 방법 및 전자 부품 제조 장치 - Google Patents

전자 부품 및 그 제조 방법 및 전자 부품 제조 장치 Download PDF

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Publication number
KR102261309B1
KR102261309B1 KR1020187017784A KR20187017784A KR102261309B1 KR 102261309 B1 KR102261309 B1 KR 102261309B1 KR 1020187017784 A KR1020187017784 A KR 1020187017784A KR 20187017784 A KR20187017784 A KR 20187017784A KR 102261309 B1 KR102261309 B1 KR 102261309B1
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KR
South Korea
Prior art keywords
resin
electronic component
substrate
semiconductor chip
grinding
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KR1020187017784A
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English (en)
Korean (ko)
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KR20180095829A (ko
Inventor
카츠노리 츠타후지
마사유키 야마모토
칸지 이시바시
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토와 가부시기가이샤
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Publication of KR20180095829A publication Critical patent/KR20180095829A/ko
Application granted granted Critical
Publication of KR102261309B1 publication Critical patent/KR102261309B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • H01L2924/1816Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161Exposing the passive side of the semiconductor or solid-state body of a flip chip

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
KR1020187017784A 2015-12-18 2016-08-09 전자 부품 및 그 제조 방법 및 전자 부품 제조 장치 KR102261309B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2015-247561 2015-12-18
JP2015247561A JP6482454B2 (ja) 2015-12-18 2015-12-18 電子部品の製造方法ならびに電子部品製造装置
PCT/JP2016/073389 WO2017104169A1 (ja) 2015-12-18 2016-08-09 電子部品およびその製造方法ならびに電子部品製造装置

Publications (2)

Publication Number Publication Date
KR20180095829A KR20180095829A (ko) 2018-08-28
KR102261309B1 true KR102261309B1 (ko) 2021-06-07

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KR1020187017784A KR102261309B1 (ko) 2015-12-18 2016-08-09 전자 부품 및 그 제조 방법 및 전자 부품 제조 장치

Country Status (5)

Country Link
JP (1) JP6482454B2 (ja)
KR (1) KR102261309B1 (ja)
CN (1) CN108431933B (ja)
TW (1) TW201724391A (ja)
WO (1) WO2017104169A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019012714A (ja) * 2017-06-29 2019-01-24 株式会社ディスコ 半導体パッケージの製造方法
JP6609674B1 (ja) * 2018-07-11 2019-11-20 浜松ホトニクス株式会社 光検出装置及び光検出装置の製造方法
JP6994279B1 (ja) * 2021-05-12 2022-01-14 ハイソル株式会社 研磨方法、及び研磨用半導体チップ保持構造

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001057404A (ja) * 1999-06-07 2001-02-27 Rohm Co Ltd 半導体装置およびその製造方法
JP2002305266A (ja) 2001-04-06 2002-10-18 Hitachi Ltd 半導体装置の製造方法
JP2003152005A (ja) 2001-11-19 2003-05-23 Towa Corp 半導体素子の樹脂封止成形装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS552112U (ja) * 1978-06-21 1980-01-09
JPH04297056A (ja) 1991-03-08 1992-10-21 Sony Corp 半導体装置の製造方法
JPH06120295A (ja) * 1992-10-02 1994-04-28 Mitsubishi Electric Corp 半導体装置
JP4803855B2 (ja) * 1999-02-09 2011-10-26 三洋電機株式会社 半導体装置の製造方法
DE10106346B4 (de) * 2001-02-09 2007-03-01 Infineon Technologies Ag Elektronisches Bauteil
JP4859814B2 (ja) * 2007-11-06 2012-01-25 株式会社東京精密 ウェーハ処理装置
JP5192790B2 (ja) * 2007-11-28 2013-05-08 Towa株式会社 基板の切断方法及び装置
JP3142888U (ja) * 2008-03-28 2008-07-03 幸三 松井 パタークラブ
JP2010073803A (ja) * 2008-09-17 2010-04-02 Nec Electronics Corp 半導体装置の製造方法
TW201032300A (en) * 2009-02-27 2010-09-01 Advanced Semiconductor Eng Chip scale package and method of fabricating the same
JP2011222706A (ja) * 2010-04-08 2011-11-04 Canon Inc 半導体パッケージ
US9318404B2 (en) * 2013-02-05 2016-04-19 Stats Chippac, Ltd. Semiconductor device and method of forming stress relieving vias for improved fan-out WLCSP package
JP2014165324A (ja) * 2013-02-25 2014-09-08 Disco Abrasive Syst Ltd パッケージ基板の加工方法
US9252092B2 (en) * 2013-07-24 2016-02-02 Stats Chippac, Ltd. Semiconductor device and method of forming through mold hole with alignment and dimension control
JP6235391B2 (ja) * 2014-03-27 2017-11-22 Towa株式会社 検査用治具、切断装置及び切断方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001057404A (ja) * 1999-06-07 2001-02-27 Rohm Co Ltd 半導体装置およびその製造方法
JP2002305266A (ja) 2001-04-06 2002-10-18 Hitachi Ltd 半導体装置の製造方法
JP2003152005A (ja) 2001-11-19 2003-05-23 Towa Corp 半導体素子の樹脂封止成形装置

Also Published As

Publication number Publication date
JP6482454B2 (ja) 2019-03-13
KR20180095829A (ko) 2018-08-28
CN108431933B (zh) 2021-07-13
JP2017112317A (ja) 2017-06-22
WO2017104169A1 (ja) 2017-06-22
CN108431933A (zh) 2018-08-21
TW201724391A (zh) 2017-07-01

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