KR102255871B1 - 자기 소자, 스커미온 메모리, 스커미온 메모리가 장착된 중앙 처리 lsi, 데이터 기록 장치, 데이터 처리 장치, 및 데이터 통신 장치 - Google Patents

자기 소자, 스커미온 메모리, 스커미온 메모리가 장착된 중앙 처리 lsi, 데이터 기록 장치, 데이터 처리 장치, 및 데이터 통신 장치 Download PDF

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KR102255871B1
KR102255871B1 KR1020197014368A KR20197014368A KR102255871B1 KR 102255871 B1 KR102255871 B1 KR 102255871B1 KR 1020197014368 A KR1020197014368 A KR 1020197014368A KR 20197014368 A KR20197014368 A KR 20197014368A KR 102255871 B1 KR102255871 B1 KR 102255871B1
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magnetic
thin film
skirmion
electrode
transistor
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KR20190065441A (ko
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요시오 가네코
요시노리 토쿠라
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고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소
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    • H01L43/08—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H01L27/222—
    • H01L29/82—
    • H01L43/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020197014368A 2016-11-18 2017-11-02 자기 소자, 스커미온 메모리, 스커미온 메모리가 장착된 중앙 처리 lsi, 데이터 기록 장치, 데이터 처리 장치, 및 데이터 통신 장치 Active KR102255871B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2016-225281 2016-11-18
JP2016225281A JP6712804B2 (ja) 2016-11-18 2016-11-18 磁気素子、スキルミオンメモリ、スキルミオンメモリ搭載中央演算処理ｌｓｉ、データ記録装置、データ処理装置およびデータ通信装置
PCT/JP2017/039829 WO2018092610A1 (ja) 2016-11-18 2017-11-02 磁気素子、スキルミオンメモリ、スキルミオンメモリ搭載中央演算処理ｌｓｉ、データ記録装置、データ処理装置およびデータ通信装置

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KR20190065441A KR20190065441A (ko) 2019-06-11
KR102255871B1 true KR102255871B1 (ko) 2021-05-24

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US (1) US10658426B2 (enExample)
JP (1) JP6712804B2 (enExample)
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WO (1) WO2018092610A1 (enExample)

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JP7149191B2 (ja) * 2019-01-16 2022-10-06 株式会社アルバック ＣｏＺｎＭｎ膜の形成方法、および、ＣｏＺｎＭｎターゲット
JP2021033579A (ja) * 2019-08-22 2021-03-01 国立大学法人大阪大学 演算装置
JP7586694B2 (ja) * 2020-12-01 2024-11-19 Tdk株式会社 磁気アレイ
US11793002B2 (en) * 2021-05-05 2023-10-17 International Business Machines Corporation Resistive memory device with magnetic layer having topological spin textures for tuning
KR102517665B1 (ko) * 2021-07-05 2023-04-05 한국표준과학연구원 스커미온 생성, 소거 및 이동 장치
CN116820390A (zh) * 2022-03-21 2023-09-29 中电海康集团有限公司 一种存算器件、计数器、移位累加器和存内乘加结构
CN115527576A (zh) * 2022-08-30 2022-12-27 香港中文大学（深圳） 一种基于磁隧道结产生及擦除单个斯格明子的方法

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US8897061B2 (en) 2012-01-30 2014-11-25 Quantumag Consultancy Corp. MTJ cell for an MRAM device and a manufacturing method thereof
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KR101878418B1 (ko) * 2014-11-06 2018-07-13 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소 자기 소자, 스커미온 메모리, 스커미온 메모리 탑재 고체 전자 장치, 데이터 기록 장치, 데이터 처리 장치 및 통신 장치
JP6721902B2 (ja) * 2014-11-27 2020-07-15 国立研究開発法人理化学研究所 磁気素子、スキルミオンメモリ、スキルミオンメモリ搭載固体電子デバイス、データ記録装置、データ処理装置及び通信装置
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US20190267427A1 (en) 2019-08-29
KR20190065441A (ko) 2019-06-11
US10658426B2 (en) 2020-05-19
JP2018082124A (ja) 2018-05-24
JP6712804B2 (ja) 2020-06-24
WO2018092610A1 (ja) 2018-05-24

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