JP6712804B2 - 磁気素子、スキルミオンメモリ、スキルミオンメモリ搭載中央演算処理ｌｓｉ、データ記録装置、データ処理装置およびデータ通信装置 - Google Patents

磁気素子、スキルミオンメモリ、スキルミオンメモリ搭載中央演算処理ｌｓｉ、データ記録装置、データ処理装置およびデータ通信装置 Download PDF

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JP6712804B2
JP6712804B2 JP2016225281A JP2016225281A JP6712804B2 JP 6712804 B2 JP6712804 B2 JP 6712804B2 JP 2016225281 A JP2016225281 A JP 2016225281A JP 2016225281 A JP2016225281 A JP 2016225281A JP 6712804 B2 JP6712804 B2 JP 6712804B2
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magnetic
thin film
skyrmion
electrode
transistor
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JP2018082124A5 (enExample
JP2018082124A (ja
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金子　良夫
良夫 金子
十倉　好紀
好紀 十倉
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RIKEN
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RIKEN
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Priority to PCT/JP2017/039829 priority patent/WO2018092610A1/ja
Priority to KR1020197014368A priority patent/KR102255871B1/ko
Publication of JP2018082124A publication Critical patent/JP2018082124A/ja
Priority to US16/416,317 priority patent/US10658426B2/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2016225281A 2016-11-18 2016-11-18 磁気素子、スキルミオンメモリ、スキルミオンメモリ搭載中央演算処理ｌｓｉ、データ記録装置、データ処理装置およびデータ通信装置 Active JP6712804B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016225281A JP6712804B2 (ja) 2016-11-18 2016-11-18 磁気素子、スキルミオンメモリ、スキルミオンメモリ搭載中央演算処理ｌｓｉ、データ記録装置、データ処理装置およびデータ通信装置
PCT/JP2017/039829 WO2018092610A1 (ja) 2016-11-18 2017-11-02 磁気素子、スキルミオンメモリ、スキルミオンメモリ搭載中央演算処理ｌｓｉ、データ記録装置、データ処理装置およびデータ通信装置
KR1020197014368A KR102255871B1 (ko) 2016-11-18 2017-11-02 자기 소자, 스커미온 메모리, 스커미온 메모리가 장착된 중앙 처리 lsi, 데이터 기록 장치, 데이터 처리 장치, 및 데이터 통신 장치
US16/416,317 US10658426B2 (en) 2016-11-18 2019-05-20 Magnetic element, skyrmion memory, skyrmion memory-mounted central processing LSI, data recording apparatus, data processing apparatus, and data communication apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016225281A JP6712804B2 (ja) 2016-11-18 2016-11-18 磁気素子、スキルミオンメモリ、スキルミオンメモリ搭載中央演算処理ｌｓｉ、データ記録装置、データ処理装置およびデータ通信装置

Publications (3)

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JP2018082124A JP2018082124A (ja) 2018-05-24
JP2018082124A5 JP2018082124A5 (enExample) 2019-07-11
JP6712804B2 true JP6712804B2 (ja) 2020-06-24

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US (1) US10658426B2 (enExample)
JP (1) JP6712804B2 (enExample)
KR (1) KR102255871B1 (enExample)
WO (1) WO2018092610A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP7149191B2 (ja) * 2019-01-16 2022-10-06 株式会社アルバック ＣｏＺｎＭｎ膜の形成方法、および、ＣｏＺｎＭｎターゲット
JP2021033579A (ja) * 2019-08-22 2021-03-01 国立大学法人大阪大学 演算装置
JP7586694B2 (ja) * 2020-12-01 2024-11-19 Tdk株式会社 磁気アレイ
US11793002B2 (en) * 2021-05-05 2023-10-17 International Business Machines Corporation Resistive memory device with magnetic layer having topological spin textures for tuning
KR102517665B1 (ko) * 2021-07-05 2023-04-05 한국표준과학연구원 스커미온 생성, 소거 및 이동 장치
CN116820390A (zh) * 2022-03-21 2023-09-29 中电海康集团有限公司 一种存算器件、计数器、移位累加器和存内乘加结构
CN115527576A (zh) * 2022-08-30 2022-12-27 香港中文大学（深圳） 一种基于磁隧道结产生及擦除单个斯格明子的方法

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JP3980990B2 (ja) * 2002-10-31 2007-09-26 株式会社東芝 磁気メモリ
FR2963152B1 (fr) * 2010-07-26 2013-03-29 Centre Nat Rech Scient Element de memoire magnetique
US8897061B2 (en) 2012-01-30 2014-11-25 Quantumag Consultancy Corp. MTJ cell for an MRAM device and a manufacturing method thereof
SE538342C2 (sv) * 2014-04-09 2016-05-24 Nanosc Ab Spinnoscillator-anordning
JP6677944B2 (ja) * 2014-07-04 2020-04-08 国立研究開発法人理化学研究所 磁気素子、スキルミオンメモリ、固体電子デバイス、データ記録装置、データ処理装置および通信装置
JP6450389B2 (ja) * 2014-08-07 2019-01-09 国立研究開発法人理化学研究所 磁気記憶媒体およびデータ記録装置
JP6637427B2 (ja) * 2014-09-02 2020-01-29 国立研究開発法人理化学研究所 磁気素子、スキルミオンメモリ、スキルミオンメモリデバイス、固体電子デバイス、データ記録装置、データ処理装置およびデータ通信装置
JP2016052697A (ja) 2014-09-03 2016-04-14 インターマン株式会社 人型ロボット
EP3196944B1 (en) * 2014-09-04 2021-05-05 Riken Magnetic element and skyrmion memory
FR3025655B1 (fr) * 2014-09-09 2016-10-14 Thales Sa Systeme de generation de skyrmions
JP6674899B2 (ja) 2014-10-28 2020-04-01 国立研究開発法人理化学研究所 磁気素子、スキルミオンメモリ、スキルミオンメモリデバイス、スキルミオンメモリ搭載固体電子デバイス、データ記録装置、データ処理装置および通信装置
KR101878418B1 (ko) * 2014-11-06 2018-07-13 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소 자기 소자, 스커미온 메모리, 스커미온 메모리 탑재 고체 전자 장치, 데이터 기록 장치, 데이터 처리 장치 및 통신 장치
JP6721902B2 (ja) * 2014-11-27 2020-07-15 国立研究開発法人理化学研究所 磁気素子、スキルミオンメモリ、スキルミオンメモリ搭載固体電子デバイス、データ記録装置、データ処理装置及び通信装置
WO2017024253A1 (en) * 2015-08-05 2017-02-09 The Regents Of The University Of California Ground state artificial skyrmion lattices at room temperature
JP5985728B1 (ja) 2015-09-15 2016-09-06 株式会社東芝 磁気メモリ
US10593389B2 (en) * 2016-03-01 2020-03-17 Virginia Commonwealth University Switching skyrmions with VCMA/electric field for memory, computing and information processing
JP6206688B2 (ja) * 2016-05-11 2017-10-04 セイコーエプソン株式会社 熱サイクル装置
KR101963482B1 (ko) * 2016-10-20 2019-03-28 고려대학교 산학협력단 자기 터널 접합 소자 및 자기 메모리 소자
WO2018204755A1 (en) * 2017-05-04 2018-11-08 Massachusetts Institute Of Technology Methods and apparatus for making magnetic skyrmions

Also Published As

Publication number Publication date
US20190267427A1 (en) 2019-08-29
KR20190065441A (ko) 2019-06-11
US10658426B2 (en) 2020-05-19
KR102255871B1 (ko) 2021-05-24
JP2018082124A (ja) 2018-05-24
WO2018092610A1 (ja) 2018-05-24

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