KR102245901B1 - 플라즈마 에칭 방법 및 플라즈마 에칭 장치 - Google Patents

플라즈마 에칭 방법 및 플라즈마 에칭 장치 Download PDF

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KR102245901B1
KR102245901B1 KR1020140079591A KR20140079591A KR102245901B1 KR 102245901 B1 KR102245901 B1 KR 102245901B1 KR 1020140079591 A KR1020140079591 A KR 1020140079591A KR 20140079591 A KR20140079591 A KR 20140079591A KR 102245901 B1 KR102245901 B1 KR 102245901B1
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South Korea
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flow rate
gas
film
cos
groove
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English (en)
Korean (ko)
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KR20150002525A (ko
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타카유키 이시이
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

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  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
KR1020140079591A 2013-06-28 2014-06-27 플라즈마 에칭 방법 및 플라즈마 에칭 장치 Expired - Fee Related KR102245901B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-137118 2013-06-28
JP2013137118A JP6185305B2 (ja) 2013-06-28 2013-06-28 プラズマエッチング方法およびプラズマエッチング装置

Publications (2)

Publication Number Publication Date
KR20150002525A KR20150002525A (ko) 2015-01-07
KR102245901B1 true KR102245901B1 (ko) 2021-04-29

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KR1020140079591A Expired - Fee Related KR102245901B1 (ko) 2013-06-28 2014-06-27 플라즈마 에칭 방법 및 플라즈마 에칭 장치

Country Status (6)

Country Link
US (1) US9324569B2 (enExample)
EP (1) EP2819151B1 (enExample)
JP (1) JP6185305B2 (enExample)
KR (1) KR102245901B1 (enExample)
CN (1) CN104253036B (enExample)
TW (1) TWI618145B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6817692B2 (ja) * 2015-08-27 2021-01-20 東京エレクトロン株式会社 プラズマ処理方法
JP6748354B2 (ja) 2015-09-18 2020-09-02 セントラル硝子株式会社 ドライエッチング方法及びドライエッチング剤
US10546756B2 (en) * 2016-11-29 2020-01-28 Lam Research Corporation Method for generating vertical profiles in organic layer etches
JP6833657B2 (ja) * 2017-11-07 2021-02-24 東京エレクトロン株式会社 基板をプラズマエッチングする方法
CN108550578B (zh) * 2018-03-26 2020-10-02 长江存储科技有限责任公司 三维存储器制造方法
JP7022651B2 (ja) 2018-05-28 2022-02-18 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
JP6778822B2 (ja) * 2018-10-26 2020-11-04 株式会社日立ハイテク プラズマ処理方法
JP7195113B2 (ja) * 2018-11-07 2022-12-23 東京エレクトロン株式会社 処理方法及び基板処理装置
CN112368805B (zh) 2018-12-18 2024-10-08 玛特森技术公司 使用含硫工艺气体的含碳硬掩模去除工艺
US11476123B2 (en) 2019-09-13 2022-10-18 Tokyo Electron Limited Etching method, plasma processing apparatus, and substrate processing system
JP7493400B2 (ja) 2019-09-13 2024-05-31 東京エレクトロン株式会社 エッチング方法、プラズマ処理装置、及び基板処理システム
JP7336365B2 (ja) 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
US11443954B2 (en) 2019-12-10 2022-09-13 Tokyo Electron Limited Method and apparatus for controlling a shape of a pattern over a substrate
CN115066742B (zh) * 2020-02-19 2025-09-30 东京毅力科创株式会社 基片处理方法和基片处理系统
WO2021171458A1 (ja) 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
KR102873060B1 (ko) 2021-04-23 2025-10-16 삼성전자주식회사 하드 마스크 구조체를 포함하는 반도체 소자
JP2023082809A (ja) * 2021-12-03 2023-06-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
WO2025089101A1 (ja) * 2023-10-24 2025-05-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3116533B2 (ja) * 1992-04-08 2000-12-11 ソニー株式会社 ドライエッチング方法
EP0903777A4 (en) * 1997-01-21 2005-09-14 Matsushita Electric Industrial Co Ltd PATTERN MOLDING
JP2000077386A (ja) * 1998-08-27 2000-03-14 Seiko Epson Corp パターン形成方法
JP2001168084A (ja) * 1999-12-07 2001-06-22 Nec Corp 半導体装置の製造方法
JP5108489B2 (ja) * 2007-01-16 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR20090069122A (ko) * 2007-12-24 2009-06-29 주식회사 하이닉스반도체 반도체 장치의 제조방법
US8133819B2 (en) 2008-02-21 2012-03-13 Applied Materials, Inc. Plasma etching carbonaceous layers with sulfur-based etchants
JP2010041028A (ja) 2008-07-11 2010-02-18 Tokyo Electron Ltd 基板処理方法
KR20100031962A (ko) 2008-09-17 2010-03-25 삼성전자주식회사 카본계막 식각 방법 및 이를 이용한 콘택홀 형성방법
JP5528244B2 (ja) * 2010-07-26 2014-06-25 東京エレクトロン株式会社 プラズマ処理方法および記憶媒体
JP5642001B2 (ja) * 2011-03-25 2014-12-17 東京エレクトロン株式会社 プラズマエッチング方法
FR3000603B1 (fr) * 2012-12-28 2016-11-25 Commissariat Energie Atomique Procede de gravure anisotrope

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Publication number Publication date
KR20150002525A (ko) 2015-01-07
JP2015012178A (ja) 2015-01-19
US20150004795A1 (en) 2015-01-01
EP2819151A1 (en) 2014-12-31
TW201515102A (zh) 2015-04-16
CN104253036A (zh) 2014-12-31
TWI618145B (zh) 2018-03-11
CN104253036B (zh) 2017-11-28
JP6185305B2 (ja) 2017-08-23
EP2819151B1 (en) 2020-08-05
US9324569B2 (en) 2016-04-26

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