CN104253036B - 等离子体蚀刻方法及等离子体蚀刻装置 - Google Patents
等离子体蚀刻方法及等离子体蚀刻装置 Download PDFInfo
- Publication number
- CN104253036B CN104253036B CN201410301711.2A CN201410301711A CN104253036B CN 104253036 B CN104253036 B CN 104253036B CN 201410301711 A CN201410301711 A CN 201410301711A CN 104253036 B CN104253036 B CN 104253036B
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- China
- Prior art keywords
- gas
- flow rate
- plasma
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
- H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
- H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
Landscapes
- Drying Of Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-137118 | 2013-06-28 | ||
| JP2013137118A JP6185305B2 (ja) | 2013-06-28 | 2013-06-28 | プラズマエッチング方法およびプラズマエッチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104253036A CN104253036A (zh) | 2014-12-31 |
| CN104253036B true CN104253036B (zh) | 2017-11-28 |
Family
ID=50981431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410301711.2A Expired - Fee Related CN104253036B (zh) | 2013-06-28 | 2014-06-27 | 等离子体蚀刻方法及等离子体蚀刻装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9324569B2 (enExample) |
| EP (1) | EP2819151B1 (enExample) |
| JP (1) | JP6185305B2 (enExample) |
| KR (1) | KR102245901B1 (enExample) |
| CN (1) | CN104253036B (enExample) |
| TW (1) | TWI618145B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6817692B2 (ja) * | 2015-08-27 | 2021-01-20 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JP6748354B2 (ja) | 2015-09-18 | 2020-09-02 | セントラル硝子株式会社 | ドライエッチング方法及びドライエッチング剤 |
| US10546756B2 (en) * | 2016-11-29 | 2020-01-28 | Lam Research Corporation | Method for generating vertical profiles in organic layer etches |
| JP6833657B2 (ja) * | 2017-11-07 | 2021-02-24 | 東京エレクトロン株式会社 | 基板をプラズマエッチングする方法 |
| CN108550578B (zh) * | 2018-03-26 | 2020-10-02 | 长江存储科技有限责任公司 | 三维存储器制造方法 |
| JP7022651B2 (ja) | 2018-05-28 | 2022-02-18 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
| JP6778822B2 (ja) * | 2018-10-26 | 2020-11-04 | 株式会社日立ハイテク | プラズマ処理方法 |
| JP7195113B2 (ja) * | 2018-11-07 | 2022-12-23 | 東京エレクトロン株式会社 | 処理方法及び基板処理装置 |
| CN112368805B (zh) | 2018-12-18 | 2024-10-08 | 玛特森技术公司 | 使用含硫工艺气体的含碳硬掩模去除工艺 |
| US11476123B2 (en) | 2019-09-13 | 2022-10-18 | Tokyo Electron Limited | Etching method, plasma processing apparatus, and substrate processing system |
| JP7493400B2 (ja) | 2019-09-13 | 2024-05-31 | 東京エレクトロン株式会社 | エッチング方法、プラズマ処理装置、及び基板処理システム |
| JP7336365B2 (ja) | 2019-11-19 | 2023-08-31 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
| US11443954B2 (en) | 2019-12-10 | 2022-09-13 | Tokyo Electron Limited | Method and apparatus for controlling a shape of a pattern over a substrate |
| CN115066742B (zh) * | 2020-02-19 | 2025-09-30 | 东京毅力科创株式会社 | 基片处理方法和基片处理系统 |
| WO2021171458A1 (ja) | 2020-02-27 | 2021-09-02 | 株式会社日立ハイテク | プラズマ処理方法 |
| KR102873060B1 (ko) | 2021-04-23 | 2025-10-16 | 삼성전자주식회사 | 하드 마스크 구조체를 포함하는 반도체 소자 |
| JP2023082809A (ja) * | 2021-12-03 | 2023-06-15 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| WO2025089101A1 (ja) * | 2023-10-24 | 2025-05-01 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1213456A (zh) * | 1997-01-21 | 1999-04-07 | 松下电器产业株式会社 | 模样形成方法 |
| CN101471236A (zh) * | 2007-12-24 | 2009-07-01 | 海力士半导体有限公司 | 制造半导体器件的方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3116533B2 (ja) * | 1992-04-08 | 2000-12-11 | ソニー株式会社 | ドライエッチング方法 |
| JP2000077386A (ja) * | 1998-08-27 | 2000-03-14 | Seiko Epson Corp | パターン形成方法 |
| JP2001168084A (ja) * | 1999-12-07 | 2001-06-22 | Nec Corp | 半導体装置の製造方法 |
| JP5108489B2 (ja) * | 2007-01-16 | 2012-12-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| US8133819B2 (en) | 2008-02-21 | 2012-03-13 | Applied Materials, Inc. | Plasma etching carbonaceous layers with sulfur-based etchants |
| JP2010041028A (ja) | 2008-07-11 | 2010-02-18 | Tokyo Electron Ltd | 基板処理方法 |
| KR20100031962A (ko) | 2008-09-17 | 2010-03-25 | 삼성전자주식회사 | 카본계막 식각 방법 및 이를 이용한 콘택홀 형성방법 |
| JP5528244B2 (ja) * | 2010-07-26 | 2014-06-25 | 東京エレクトロン株式会社 | プラズマ処理方法および記憶媒体 |
| JP5642001B2 (ja) * | 2011-03-25 | 2014-12-17 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| FR3000603B1 (fr) * | 2012-12-28 | 2016-11-25 | Commissariat Energie Atomique | Procede de gravure anisotrope |
-
2013
- 2013-06-28 JP JP2013137118A patent/JP6185305B2/ja not_active Expired - Fee Related
-
2014
- 2014-06-26 EP EP14174609.9A patent/EP2819151B1/en not_active Not-in-force
- 2014-06-26 TW TW103122141A patent/TWI618145B/zh not_active IP Right Cessation
- 2014-06-26 US US14/316,082 patent/US9324569B2/en not_active Expired - Fee Related
- 2014-06-27 KR KR1020140079591A patent/KR102245901B1/ko not_active Expired - Fee Related
- 2014-06-27 CN CN201410301711.2A patent/CN104253036B/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1213456A (zh) * | 1997-01-21 | 1999-04-07 | 松下电器产业株式会社 | 模样形成方法 |
| CN101471236A (zh) * | 2007-12-24 | 2009-07-01 | 海力士半导体有限公司 | 制造半导体器件的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150002525A (ko) | 2015-01-07 |
| JP2015012178A (ja) | 2015-01-19 |
| US20150004795A1 (en) | 2015-01-01 |
| EP2819151A1 (en) | 2014-12-31 |
| TW201515102A (zh) | 2015-04-16 |
| CN104253036A (zh) | 2014-12-31 |
| TWI618145B (zh) | 2018-03-11 |
| JP6185305B2 (ja) | 2017-08-23 |
| KR102245901B1 (ko) | 2021-04-29 |
| EP2819151B1 (en) | 2020-08-05 |
| US9324569B2 (en) | 2016-04-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171128 |