CN104253036B - 等离子体蚀刻方法及等离子体蚀刻装置 - Google Patents

等离子体蚀刻方法及等离子体蚀刻装置 Download PDF

Info

Publication number
CN104253036B
CN104253036B CN201410301711.2A CN201410301711A CN104253036B CN 104253036 B CN104253036 B CN 104253036B CN 201410301711 A CN201410301711 A CN 201410301711A CN 104253036 B CN104253036 B CN 104253036B
Authority
CN
China
Prior art keywords
gas
plasma
cos
flow
ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410301711.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN104253036A (zh
Inventor
石井孝幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN104253036A publication Critical patent/CN104253036A/zh
Application granted granted Critical
Publication of CN104253036B publication Critical patent/CN104253036B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201410301711.2A 2013-06-28 2014-06-27 等离子体蚀刻方法及等离子体蚀刻装置 Expired - Fee Related CN104253036B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013137118A JP6185305B2 (ja) 2013-06-28 2013-06-28 プラズマエッチング方法およびプラズマエッチング装置
JP2013-137118 2013-06-28

Publications (2)

Publication Number Publication Date
CN104253036A CN104253036A (zh) 2014-12-31
CN104253036B true CN104253036B (zh) 2017-11-28

Family

ID=50981431

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410301711.2A Expired - Fee Related CN104253036B (zh) 2013-06-28 2014-06-27 等离子体蚀刻方法及等离子体蚀刻装置

Country Status (6)

Country Link
US (1) US9324569B2 (enExample)
EP (1) EP2819151B1 (enExample)
JP (1) JP6185305B2 (enExample)
KR (1) KR102245901B1 (enExample)
CN (1) CN104253036B (enExample)
TW (1) TWI618145B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6817692B2 (ja) * 2015-08-27 2021-01-20 東京エレクトロン株式会社 プラズマ処理方法
JP6748354B2 (ja) 2015-09-18 2020-09-02 セントラル硝子株式会社 ドライエッチング方法及びドライエッチング剤
CN109997212B (zh) * 2016-11-29 2023-06-13 朗姆研究公司 在有机层蚀刻中生成竖直轮廓的方法
JP6833657B2 (ja) * 2017-11-07 2021-02-24 東京エレクトロン株式会社 基板をプラズマエッチングする方法
CN108550578B (zh) * 2018-03-26 2020-10-02 长江存储科技有限责任公司 三维存储器制造方法
JP7022651B2 (ja) 2018-05-28 2022-02-18 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
CN111373511B (zh) * 2018-10-26 2023-12-26 株式会社日立高新技术 等离子体处理方法
JP7195113B2 (ja) * 2018-11-07 2022-12-23 東京エレクトロン株式会社 処理方法及び基板処理装置
WO2020131608A1 (en) 2018-12-18 2020-06-25 Mattson Technology, Inc. Carbon containing hardmask removal process using sulfur containing process gas
US11476123B2 (en) 2019-09-13 2022-10-18 Tokyo Electron Limited Etching method, plasma processing apparatus, and substrate processing system
JP7493400B2 (ja) 2019-09-13 2024-05-31 東京エレクトロン株式会社 エッチング方法、プラズマ処理装置、及び基板処理システム
JP7336365B2 (ja) 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
US11443954B2 (en) 2019-12-10 2022-09-13 Tokyo Electron Limited Method and apparatus for controlling a shape of a pattern over a substrate
WO2021166674A1 (ja) * 2020-02-19 2021-08-26 東京エレクトロン株式会社 基板処理方法及び基板処理システム
WO2021171458A1 (ja) 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
KR102873060B1 (ko) 2021-04-23 2025-10-16 삼성전자주식회사 하드 마스크 구조체를 포함하는 반도체 소자
JP2023082809A (ja) * 2021-12-03 2023-06-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
WO2025089101A1 (ja) * 2023-10-24 2025-05-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1213456A (zh) * 1997-01-21 1999-04-07 松下电器产业株式会社 模样形成方法
CN101471236A (zh) * 2007-12-24 2009-07-01 海力士半导体有限公司 制造半导体器件的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3116533B2 (ja) * 1992-04-08 2000-12-11 ソニー株式会社 ドライエッチング方法
JP2000077386A (ja) * 1998-08-27 2000-03-14 Seiko Epson Corp パターン形成方法
JP2001168084A (ja) * 1999-12-07 2001-06-22 Nec Corp 半導体装置の製造方法
JP5108489B2 (ja) * 2007-01-16 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
US8133819B2 (en) * 2008-02-21 2012-03-13 Applied Materials, Inc. Plasma etching carbonaceous layers with sulfur-based etchants
JP2010041028A (ja) * 2008-07-11 2010-02-18 Tokyo Electron Ltd 基板処理方法
KR20100031962A (ko) 2008-09-17 2010-03-25 삼성전자주식회사 카본계막 식각 방법 및 이를 이용한 콘택홀 형성방법
JP5528244B2 (ja) * 2010-07-26 2014-06-25 東京エレクトロン株式会社 プラズマ処理方法および記憶媒体
JP5642001B2 (ja) * 2011-03-25 2014-12-17 東京エレクトロン株式会社 プラズマエッチング方法
FR3000603B1 (fr) * 2012-12-28 2016-11-25 Commissariat Energie Atomique Procede de gravure anisotrope

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1213456A (zh) * 1997-01-21 1999-04-07 松下电器产业株式会社 模样形成方法
CN101471236A (zh) * 2007-12-24 2009-07-01 海力士半导体有限公司 制造半导体器件的方法

Also Published As

Publication number Publication date
EP2819151B1 (en) 2020-08-05
JP6185305B2 (ja) 2017-08-23
KR102245901B1 (ko) 2021-04-29
KR20150002525A (ko) 2015-01-07
TWI618145B (zh) 2018-03-11
US20150004795A1 (en) 2015-01-01
US9324569B2 (en) 2016-04-26
JP2015012178A (ja) 2015-01-19
EP2819151A1 (en) 2014-12-31
CN104253036A (zh) 2014-12-31
TW201515102A (zh) 2015-04-16

Similar Documents

Publication Publication Date Title
CN104253036B (zh) 等离子体蚀刻方法及等离子体蚀刻装置
US9177823B2 (en) Plasma etching method and plasma etching apparatus
JP6360770B2 (ja) プラズマ処理方法及びプラズマ処理装置
CN101515542B (zh) 用硫基蚀刻剂等离子体蚀刻含碳层
JP6298391B2 (ja) プラズマ処理方法及びプラズマ処理装置
KR102441116B1 (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
US20180190505A1 (en) Method of selectively etching silicon oxide film on substrate
JP6017928B2 (ja) プラズマエッチング方法及びプラズマエッチング装置
KR101858324B1 (ko) 플라즈마 에칭 방법
KR102280572B1 (ko) 플라즈마 처리 방법
KR102424479B1 (ko) 플라즈마 에칭 방법 및 플라즈마 에칭 장치
JP6226668B2 (ja) プラズマ処理方法
JP5089871B2 (ja) 半導体装置の製造方法
KR101813321B1 (ko) 플라즈마 에칭 방법 및 플라즈마 에칭 장치

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20171128