KR102231083B1 - 기판 웨이퍼 상에 형성된 발광 디바이스들을 분리시키는 방법 - Google Patents

기판 웨이퍼 상에 형성된 발광 디바이스들을 분리시키는 방법 Download PDF

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KR102231083B1
KR102231083B1 KR1020167004378A KR20167004378A KR102231083B1 KR 102231083 B1 KR102231083 B1 KR 102231083B1 KR 1020167004378 A KR1020167004378 A KR 1020167004378A KR 20167004378 A KR20167004378 A KR 20167004378A KR 102231083 B1 KR102231083 B1 KR 102231083B1
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substrate
cracks
leds
thinning
sapphire substrate
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KR20160034987A (ko
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필립 일리에브스키
노베르투스 안토니우스 마리아 스위거스
쾅-힌 헨리 최
마크 안드레 드 샘버
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루미리즈 홀딩 비.브이.
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    • H01L33/20—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H01L21/78—
    • H01L33/0093—
    • H01L33/0095—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H01L2924/12041—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices

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  • Led Devices (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Drying Of Semiconductors (AREA)
KR1020167004378A 2013-07-22 2014-07-02 기판 웨이퍼 상에 형성된 발광 디바이스들을 분리시키는 방법 Active KR102231083B1 (ko)

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US201361856857P 2013-07-22 2013-07-22
US61/856,857 2013-07-22
PCT/IB2014/062784 WO2015011583A1 (en) 2013-07-22 2014-07-02 Method of separating light emitting devices formed on a substrate wafer

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KR20160034987A KR20160034987A (ko) 2016-03-30
KR102231083B1 true KR102231083B1 (ko) 2021-03-23

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US (3) US10079327B2 (https=)
EP (1) EP3025378B1 (https=)
JP (2) JP6429872B2 (https=)
KR (1) KR102231083B1 (https=)
CN (1) CN105556684B (https=)
TW (2) TWI726494B (https=)
WO (1) WO2015011583A1 (https=)

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DE102018111227A1 (de) * 2018-05-09 2019-11-14 Osram Opto Semiconductors Gmbh Verfahren zum Durchtrennen eines epitaktisch gewachsenen Halbleiterkörpers und Halbleiterchip
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CN112967990B (zh) * 2020-11-23 2023-02-24 重庆康佳光电技术研究院有限公司 芯片处理方法、led芯片及显示装置
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CN112701051B (zh) * 2020-12-25 2024-06-28 江苏中科智芯集成科技有限公司 一种高效散热的扇出型封装结构及其方法
CN113228310A (zh) * 2020-12-30 2021-08-06 泉州三安半导体科技有限公司 一种半导体发光元件及其制备方法
CN114141914B (zh) * 2021-12-01 2023-05-23 东莞市中麒光电技术有限公司 衬底剥离方法
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EP3025378B1 (en) 2020-05-06
WO2015011583A1 (en) 2015-01-29
TWI680588B (zh) 2019-12-21
CN105556684B (zh) 2019-10-18
US20190103508A1 (en) 2019-04-04
JP2019033280A (ja) 2019-02-28
TWI726494B (zh) 2021-05-01
KR20160034987A (ko) 2016-03-30
US20200235259A1 (en) 2020-07-23
US11038081B2 (en) 2021-06-15
US10079327B2 (en) 2018-09-18
JP6429872B2 (ja) 2018-11-28
JP2016533029A (ja) 2016-10-20
TW202006969A (zh) 2020-02-01
TW201511330A (zh) 2015-03-16
CN105556684A (zh) 2016-05-04
US11038082B2 (en) 2021-06-15
US20160163916A1 (en) 2016-06-09
EP3025378A1 (en) 2016-06-01

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