KR102230367B1 - 태양전지 및 태양전지의 제조방법 - Google Patents
태양전지 및 태양전지의 제조방법 Download PDFInfo
- Publication number
- KR102230367B1 KR102230367B1 KR1020187037405A KR20187037405A KR102230367B1 KR 102230367 B1 KR102230367 B1 KR 102230367B1 KR 1020187037405 A KR1020187037405 A KR 1020187037405A KR 20187037405 A KR20187037405 A KR 20187037405A KR 102230367 B1 KR102230367 B1 KR 102230367B1
- Authority
- KR
- South Korea
- Prior art keywords
- firing
- solar cell
- electrode
- conductive
- glass
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000010304 firing Methods 0.000 claims abstract description 131
- 239000004332 silver Substances 0.000 claims abstract description 46
- 229910052709 silver Inorganic materials 0.000 claims abstract description 46
- 230000009471 action Effects 0.000 claims abstract description 11
- 239000011521 glass Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 30
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 24
- 229910052720 vanadium Inorganic materials 0.000 claims description 18
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 10
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052788 barium Inorganic materials 0.000 claims description 9
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 9
- 239000007791 liquid phase Substances 0.000 claims description 9
- 239000007790 solid phase Substances 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 238000005476 soldering Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims 2
- 239000010408 film Substances 0.000 description 44
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 35
- 150000004767 nitrides Chemical class 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 239000005355 lead glass Substances 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000000284 extract Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- LWUVWAREOOAHDW-UHFFFAOYSA-N lead silver Chemical compound [Ag].[Pb] LWUVWAREOOAHDW-UHFFFAOYSA-N 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/14—Compositions for glass with special properties for electro-conductive glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016139009A JP6810986B2 (ja) | 2016-07-14 | 2016-07-14 | 太陽電池および太陽電池の製造方法 |
| JPJP-P-2016-139009 | 2016-07-14 | ||
| PCT/JP2017/023163 WO2018012248A1 (ja) | 2016-07-14 | 2017-06-23 | 太陽電池および太陽電池の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20190010644A KR20190010644A (ko) | 2019-01-30 |
| KR102230367B1 true KR102230367B1 (ko) | 2021-03-19 |
Family
ID=60952435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187037405A KR102230367B1 (ko) | 2016-07-14 | 2017-06-23 | 태양전지 및 태양전지의 제조방법 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6810986B2 (zh) |
| KR (1) | KR102230367B1 (zh) |
| CN (1) | CN109314149A (zh) |
| TW (1) | TWI637528B (zh) |
| WO (1) | WO2018012248A1 (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI714127B (zh) * | 2018-06-26 | 2020-12-21 | 日商亞特比目有限公司 | 太陽能電池及太陽能電池的製造方法 |
| TWI699899B (zh) * | 2018-06-26 | 2020-07-21 | 日商亞特比目有限公司 | 太陽能電池及太陽能電池的製造方法 |
| TWI702413B (zh) * | 2019-03-21 | 2020-08-21 | 元太科技工業股份有限公司 | 鄰近感測器及其運作方法 |
| JP2021022735A (ja) * | 2020-09-21 | 2021-02-18 | アートビーム株式会社 | 太陽電池および太陽電池の製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008251324A (ja) * | 2007-03-30 | 2008-10-16 | Hitachi Powdered Metals Co Ltd | 導電性ペースト |
| JP2011144057A (ja) | 2010-01-13 | 2011-07-28 | Tokyo Electronics Chemicals Corp | 導電性ガラスペースト組成物 |
| JP2012527780A (ja) * | 2009-05-20 | 2012-11-08 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | シリコンウエハの前面上にグリッド電極を形成する方法 |
| JP2015506108A (ja) * | 2011-12-13 | 2015-02-26 | ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ | 光起電力電池及びその形成方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120222738A1 (en) * | 2011-03-02 | 2012-09-06 | Electronics And Telecommunications Research Institute | Conductive composition, silicon solar cell including the same, and manufacturing method thereof |
| WO2013106225A1 (en) * | 2012-01-12 | 2013-07-18 | Applied Materials, Inc. | Methods of manufacturing solar cell devices |
| KR20150000486A (ko) * | 2012-04-18 | 2015-01-02 | 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 | 태양전지 접촉부의 인쇄 방법 |
| KR101275583B1 (ko) * | 2012-09-11 | 2013-06-17 | 엘지전자 주식회사 | 태양 전지 |
| KR20140056524A (ko) * | 2012-10-29 | 2014-05-12 | 엘지전자 주식회사 | 태양전지 |
| EP2853567A1 (en) * | 2013-09-27 | 2015-04-01 | Heraeus Precious Metals GmbH & Co. KG | Solar cells produced from high ohmic wafers and paste comprising Ag metal-oxide additive |
| JP2016072518A (ja) * | 2014-09-30 | 2016-05-09 | パナソニックＩｐマネジメント株式会社 | 太陽電池モジュール |
-
2016
- 2016-07-14 JP JP2016139009A patent/JP6810986B2/ja active Active
-
2017
- 2017-06-23 KR KR1020187037405A patent/KR102230367B1/ko active IP Right Grant
- 2017-06-23 CN CN201780035719.0A patent/CN109314149A/zh active Pending
- 2017-06-23 WO PCT/JP2017/023163 patent/WO2018012248A1/ja active Application Filing
- 2017-07-11 TW TW106123190A patent/TWI637528B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008251324A (ja) * | 2007-03-30 | 2008-10-16 | Hitachi Powdered Metals Co Ltd | 導電性ペースト |
| JP2012527780A (ja) * | 2009-05-20 | 2012-11-08 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | シリコンウエハの前面上にグリッド電極を形成する方法 |
| JP2011144057A (ja) | 2010-01-13 | 2011-07-28 | Tokyo Electronics Chemicals Corp | 導電性ガラスペースト組成物 |
| JP2015506108A (ja) * | 2011-12-13 | 2015-02-26 | ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ | 光起電力電池及びその形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201807835A (zh) | 2018-03-01 |
| WO2018012248A1 (ja) | 2018-01-18 |
| JP2018010973A (ja) | 2018-01-18 |
| JP6810986B2 (ja) | 2021-01-13 |
| KR20190010644A (ko) | 2019-01-30 |
| TWI637528B (zh) | 2018-10-01 |
| CN109314149A (zh) | 2019-02-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102230367B1 (ko) | 태양전지 및 태양전지의 제조방법 | |
| JP5541370B2 (ja) | 太陽電池の製造方法、太陽電池及び太陽電池モジュール | |
| JP5626361B2 (ja) | 太陽電池及び太陽電池モジュール、並びに太陽電池の製造方法 | |
| US20110120530A1 (en) | Back surface contact type solar cell, back surface contact type solar cell with wiring board, solar cell string, and solar cell module | |
| JP5535297B2 (ja) | 太陽電池素子及び太陽電池モジュール | |
| US20110114179A1 (en) | Solar battery, method for manufacturing solar battery, and solar cell module | |
| JP6495649B2 (ja) | 太陽電池素子および太陽電池モジュール | |
| US9171975B2 (en) | Solar cell element and process for production thereof | |
| JPWO2010001473A1 (ja) | 光起電力装置およびその製造方法 | |
| EP2597685A2 (en) | Photovoltaic device and method of manufacturing the same | |
| WO2012128284A1 (ja) | 裏面電極型太陽電池、裏面電極型太陽電池の製造方法及び太陽電池モジュール | |
| JP2014220425A (ja) | 導電性ペースト、及び太陽電池セルの製造方法 | |
| JP7058390B2 (ja) | 太陽電池および太陽電池の製造方法 | |
| JP2021022735A (ja) | 太陽電池および太陽電池の製造方法 | |
| TW200531296A (en) | Contact fabrication of emitter wrap-through back contact silicon solar cells | |
| TWI603486B (zh) | 太陽電池及太陽電池之製造方法 | |
| TWI492400B (zh) | 太陽能電池及其製造方法與太陽能電池模組 | |
| TWI626755B (zh) | 單面受光之太陽能電池及其製造方法與太陽能電池模組 | |
| CN110047962A (zh) | Mwt太阳能电池片、电池串、电池组件及制备方法 | |
| JP2014220426A (ja) | 太陽電池セル用電極、太陽電池セル、及び太陽電池セルの製造方法 | |
| JP2003197931A (ja) | 太陽電池素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant |