WO2018012248A1 - 太陽電池および太陽電池の製造方法 - Google Patents

太陽電池および太陽電池の製造方法 Download PDF

Info

Publication number
WO2018012248A1
WO2018012248A1 PCT/JP2017/023163 JP2017023163W WO2018012248A1 WO 2018012248 A1 WO2018012248 A1 WO 2018012248A1 JP 2017023163 W JP2017023163 W JP 2017023163W WO 2018012248 A1 WO2018012248 A1 WO 2018012248A1
Authority
WO
WIPO (PCT)
Prior art keywords
firing
solar cell
bus bar
electrode
bar electrode
Prior art date
Application number
PCT/JP2017/023163
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
浩一 上迫
傑也 新井
ミエ子 菅原
小林　賢一
秀利 小宮
正五 松井
周平 横山
潤 錦織
Original Assignee
アートビーム株式会社
農工大ティー・エル・オー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アートビーム株式会社, 農工大ティー・エル・オー株式会社 filed Critical アートビーム株式会社
Priority to KR1020187037405A priority Critical patent/KR102230367B1/ko
Priority to CN201780035719.0A priority patent/CN109314149A/zh
Publication of WO2018012248A1 publication Critical patent/WO2018012248A1/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/14—Compositions for glass with special properties for electro-conductive glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention a region that generates a high electron concentration when light or the like is irradiated on a substrate is formed, an insulating film that transmits light or the like is formed on the region, and electrons are extracted from the region on the insulating film.
  • the present invention relates to a solar cell having a bus bar electrode that forms a finger electrode that forms an outlet and further electrically connects a plurality of finger electrodes to extract electrons to the outside, and a method for manufacturing the solar cell.
  • the structure of a solar cell is an N-type / P-type silicon substrate 43 that converts solar energy into electrical energy, 43 prevents the reflection of the surface of the silicon nitride film 45, which is an insulating thin film, the finger electrode 42 that extracts the electrons generated in the silicon substrate 43, the bus bar electrode 41 that collects the electrons extracted by the finger electrode 42, and the bus bar electrode 41 It consists of each element of the lead electrode 47 for taking out the electrons to the outside.
  • silver and lead (lead glass) are used for the bus bar electrode 41 and the finger electrode 42, and the amount of silver used is eliminated or reduced, and further, the amount of lead (lead glass) used is not reduced. It has been desired to eliminate the cost and to make it pollution-free.
  • silver and lead (lead glass as a binder) are used for the finger electrode 42 and the like, and the amount of silver used is eliminated or reduced, and There was a problem of reducing or eliminating the amount of lead (lead glass) used, reducing the manufacturing cost of the solar cell, and making it pollution-free.
  • the finger electrode 42 containing silver and lead glass in FIG. 9B is fired to form an electrically conductive passage through the silicon nitride film 45 (referred to as “firing”), and electrons are transferred from the N / P diffusion layer 44.
  • firing an electrically conductive passage through the silicon nitride film 45
  • electrons were transferred from the N / P diffusion layer 44.
  • the bus bar electrode 41 was collected by the bus bar electrode 41 and taken out to the outside. There existed the subject of raising the efficiency of taking out these electrons, and improving the efficiency of a solar cell further.
  • the present inventors experimentally created a bus bar electrode using 100% NTA glass, which will be described later, in the paste, and have the same or superior characteristics as when the bus bar electrode was created using the above-described conventional silver paste. It was discovered that solar cells could be created (see Japanese Patent Application No. 2015-180720, etc.).
  • a region that generates a high electron concentration when light or the like is irradiated on the substrate is formed, and an insulating film that transmits light or the like is formed on the region, and an extraction port that extracts electrons from the region on the insulating film is formed.
  • bus bar electrode which is formed by using the NTA glass 100% to 0% or more as a bus bar electrode for electrically connecting a plurality of finger electrodes and taking out electrons to the outside After firing and firing, in addition to the formation of electrically conductive paths by firing from the conventional finger electrode to the high electron concentration region of the lower layer (referred to as lower layer firing), in addition, Formation of an electrically conductive passage exposed through the bus bar electrode (a strip lead wire is soldered to the electrically conductive passage) (hereinafter referred to as upper layer fire) (hereinafter referred to as upper layer fire) It found that ring hereinafter) are possible (Fig. 6 to be described later, see, FIG. 8).
  • the present invention forms a bus bar electrode that is a component of a solar cell in order to eliminate or reduce the amount of silver used and to reduce or eliminate the amount of lead (lead glass) used.
  • Paste is made with vanadate glass (hereinafter referred to as conductive NTA glass, "NTA” is registered trademark 5009023)) and fired to eliminate or reduce the use of silver and lead (lead glass)
  • NTA vanadate glass
  • the present invention creates a region that generates a high electron concentration when light or the like is irradiated on a substrate, and forms an insulating film that transmits light or the like on the region, and electrons from the region are formed on the insulating film.
  • Finger electrode containing silver and lead on an insulating film in a solar cell in which a finger electrode is formed to form a take-out port and a bus bar electrode is formed by electrically connecting a plurality of finger electrodes to take out electrons to the outside
  • a bus bar electrode is formed thereon and then fired in a lump, and the region and the finger penetrate through the insulating film, which is a film under the finger electrode, by the action of silver and lead contained in the finger electrode during the lump firing.
  • An electrically conductive path is formed between the electrodes (referred to as lower-layer firing), and the fingers are further affected by the action of silver and lead contained in the finger electrodes during firing. And so as to form an electrically conductive path is exposed on the bus bar electrode through the bus bar electrode is a layer above the electrode (referred upper firing).
  • the lower firing is the firing in the solid phase
  • the upper firing is the firing in the liquid phase
  • the length of the latter electrically conductive passage is compared to the length of the former electrically conductive passage. I try to make it much longer.
  • an electrically conductive passage is formed in the conductive layer when a conductive layer is formed on the bus bar electrode. I am doing so.
  • a strip-shaped lead wire is soldered to the exposed electrically conductive path or conductive layer.
  • the conductive bus bar electrode is made from 100% to 0% or more by weight and the rest is made of silver.
  • the conductive glass is vanadate glass containing at least vanadium or vanadium and barium.
  • the time for the process of firing the conductive glass is set to be within 1 minute at the longest and 1 second or longer.
  • the temperature is set within the range between them.
  • the conductive glass is Pb free.
  • the present invention further includes a bus bar electrode on the upper layer from the finger electrode.
  • the formation of the electrically conductive passage exposed through the upper surface makes it possible to increase the efficiency of taking out electrons from the high electron concentration region to the outside, and NTA glass on the bus bar electrode It was possible to eliminate or reduce the amount of silver used and to reduce or eliminate the amount of lead (lead glass) used.
  • FIG. 1 shows a block diagram of one embodiment of the present invention.
  • FIG. 1 (a) shows a plan view before firing
  • FIG. 1 (b) shows a sectional view before firing
  • FIG. 1 (c) shows a sectional view after firing.
  • the silicon substrate 1 is a known semiconductor silicon substrate.
  • An unillustrated high electron concentration region (diffusion doping layer) is formed in a portion of the silicon substrate 11 in contact with the nitride film 3, and the photoelectron concentration region is formed on the silicon substrate 1 with a desired p-type / n-type.
  • This is a known region (layer) formed by diffusion doping or the like.
  • FIG. 1B when sunlight is incident from above, electrons are generated (power generation) in the silicon substrate 1 and accumulated. It is an area. Here, the accumulated electrons are taken out upward by an electron outlet (finger electrode (silver) 4 in FIG. 1C).
  • the aluminum electrode (back electrode) 2 is a well-known electrode formed on the lower surface of the silicon substrate 1 and is here a paste-like material before firing (illustrated in FIG. Conductive aluminum electrode 2).
  • the nitride film (silicon nitride film) 3 is a known film that transmits (transmits) sunlight and electrically insulates the bus bar electrode 5 from the high electron concentration region, and is, for example, a SiNx film.
  • the nitride film 3 is a film (layer) that forms an electrically conductive passage through the nitride film in the solid phase by lower layer firing during batch firing described later.
  • the finger electrode 4 is an opening (finger electrode) for taking out electrons accumulated in the high electron concentration region through a hole formed in the nitride film 3, and before firing, a paste is formed on the nitride film 3 as shown in the figure. It is in a state of being printed and heat-dried (about 100 °) (when it is fired at once, it becomes as shown in FIG. 1 (c)).
  • the bus bar electrode 5 is an electrode for electrically connecting a plurality of electron outlets (a plurality of finger electrodes 4).
  • NTA glass paste is printed as the bus bar electrode 5 (for example, silk printing). ) And dried by heating to eliminate or reduce the amount of Ag used.
  • the bus bar electrode 5 becomes a conductive electrode.
  • the paste-like aluminum electrode 2, finger electrode 4, and bus bar electrode 5 are sequentially printed and heated and dried to produce the structure shown in the drawing. Then, as shown in (c) of FIG. 1, the aluminum electrode 2, the finger electrode 4, and the bus bar electrode 5 are completed.
  • the finger electrode 4 is after batch firing, and when the bus bar electrode 5 according to the present invention is fired with 100% to 0% or more of NTA glass, the finger electrode 4 is described later.
  • the upper firing 42 in the liquid phase to be formed forms (fires) a portion that is the same as the height of the upper surface of the bus bar electrode 5 or a portion that protrudes through the upper surface of the bus bar electrode 5. It becomes possible to directly flow into the lead wire (not shown) to be soldered onto the bus bar electrode 5 (to directly take out electrons). That is, the high electron concentration region, the finger electrode 4, the bus bar electrode 5, the lead wire 6 path 1 and the high electron concentration region, the finger electrode 4, the lead wire 6 route 2 in the high electron concentration region.
  • Electrons (current) can be taken out via the lead wire 6, and as a result, the resistance value between the high electron concentration region and the lead wire 6 can be made extremely small, reducing the loss. As a result, the efficiency of the solar cell can be improved.
  • an electrically conductive path is formed between the finger electrode 4, the high electron concentration region, and the finger electrode 4 by the lower layer firing 41 in the solid phase, and penetrates the finger electrode 4 and the bus bar electrode 5 or the bus bar electrode 5.
  • an electrically conductive passage is formed by the upper layer firing 42 in the liquid phase.
  • the thickness of the nitride film 3 was 60 nm and the printed thickness of the bus bar electrode 5 was 20 ⁇ m.
  • the nitride film 3 is due to the lower firing 41 in the solid phase
  • the bus bar electrode 5 made of NTA glass is the upper layer firing 42 in the liquid phase
  • the middle upper layer firing 42 was confirmed by experiments. That is, the length of the electrically conductive passage of the upper layer firing 42 in the liquid phase can be formed at a high speed of several tens to thousands times as compared with the lower layer firing 41 in the solid phase. It became clear by experiment.
  • the lower firing 41 is in contact with a portion having a high electron concentration by breaking through the lower nitride film 4 and about 60 nm by the mixture of lead (lead glass) and silver contained in the finger electrode 4.
  • the silver portion extends from the high electron concentration portion to the slightly lower electron concentration portion, so that the conversion efficiency of the solar cell is lowered. It is necessary to determine the lower layer firing (batch firing temperature and time (1 minute or less, preferably 1 second or more)) 41.
  • the upper layer firing 42 occurs simultaneously in parallel when the lower layer firing 41 occurs.
  • the upper layer firing 42 like the lower layer firing 41, breaks through the upper bus bar electrode 5, about 20 ⁇ m, onto the bus bar electrode 5 by mixing lead (lead glass) and silver contained in the finger electrode 4. An exposed portion of silver (Ag) is formed.
  • the upper layer firing 42 is excessive (the temperature for batch firing is too high)
  • the NTA glass in the bus bar electrode 5 is re-solidified and deteriorated so as to cover the exposed Ag portion (a figure to be described later). 8 and the description thereof)
  • it is necessary to determine an appropriate upper layer firing (batch firing temperature and time (1 minute or less, preferably 1 second or more)) by experiments.
  • FIG. 2 is an explanatory diagram of the main part of the present invention. 2A is the same as FIG. 1C after batch firing, and FIG. 2B is an enlarged view of the main part of FIG. 2A.
  • the upper layer firing 42 of the finger electrode 4 penetrates or almost penetrates the bus bar electrode 5, and here, an electrically conductive path (silver path) in the bus bar electrode 5. Is formed.
  • both the lower layer firing 41 and the upper layer firing 42 of the finger electrode 4 cause firing of the region 11 having a high N-type concentration, the finger electrode 4, the bus bar electrode 5 and the path 1 of the lead wire 6,
  • a high N-type region 11 -F finger electrode 4 -lead wire 6 path 2 is formed and can be taken out from the lead wire 6 via both paths 1 and 2, and the N-type concentration is high.
  • the resistance value between the region 11 and the lead wire 6 was made extremely small, and the efficiency of the solar cell could be improved (described later with reference to FIGS. 4 and 7).
  • the bus bar electrode 5 made of NTA glass is, for example, in one experimental result, if the batch firing temperature is performed at a low temperature, for example, 700 ° C., firing is not sufficient, and the bus bar electrode 5 It will come off as one.
  • batch firing is performed at a high temperature, for example, 820 ° C., the nitride film 3 immediately below the bus bar electrode 5 is damaged (hydrogen in the nitride film forms bubbles and damages the nitride film through the film)
  • the lead wire 6 is soldered, the nitride film 3 is peeled off from the silicon substrate 1.
  • the NTA glass constituting the bus bar electrode 5 is melted and re-solidified in the upper layer firing 42 so as to cover the electrically conductive path exposed on the bus bar electrode 5 and deteriorate. A situation has occurred (see FIG. 8).
  • FIG. 3 shows an example of a manufacturing process of a solar cell using the NTA glass of the present invention.
  • S1 prepares a silicon substrate (PN junction formation substrate). This is because, for example, nitriding is performed as an antireflection film (a film through which sunlight is passed and the surface reflection is reduced as much as possible) formed on the surface of the silicon substrate 1 by performing diffusion doping on the surface.
  • a silicon substrate 1 on which a film (silicon nitride film) 3 is formed is prepared.
  • S2 prints aluminum paste on the back of the silicon substrate.
  • the paste is dried by an electric furnace.
  • an aluminum paste is printed on the entire back surface of the silicon substrate 1 shown in FIGS. 1 and 2 and dried by heating in an electric furnace.
  • S4 prints a silver (lead) paste for finger electrodes on the surface of the silicon substrate.
  • a pattern of finger electrodes 4 to be formed is screen-printed on the nitride film 3.
  • the printing material for example, a paste in which lead glass is mixed as a frit in silver is used.
  • S5 dries the silver (lead) paste in an electric furnace.
  • S6 prints bus bar electrodes with silver / NTA glass paste on the surface of the silicon substrate. This screen-prints the pattern of the bus bar electrode 5 to be formed on the finger electrode dried in S4. .
  • the printing material for example, NTA glass (100% to 0% or more, remaining silver) is used as a frit.
  • the aluminum electrode 2 is formed on the back surface of the silicon substrate 1 on which the high electron concentration region 11 and the nitride film 3 are formed, and the finger electrode 4 and the bus bar electrode 5 paste are sequentially printed and heated and dried on the surface of the silicon substrate 1. This completes the preparation for batch firing.
  • S8 is a far-infrared firing furnace for firing all pastes of aluminum electrodes, finger electrodes, and bus bar electrodes.
  • an aluminum electrode 3 is formed,
  • the bus bar electrode 5 which is the upper layer film by the action of lead (lead glass) and silver in the finger electrode 4 is in the liquid phase, and electrons are transferred from the finger electrode 4 to the bus bar electrode 5 by the upper layer firing 42.
  • Path 2 finger electrode 4, path 2 of lead wire 6) to the part protruding upward (lead wire 6 is soldered) or path 1 (finger electrode 4, Forming the bus bar electrode 5 and the path 1) of the lead wire 6; This was confirmed by experiments.
  • S9 is soldered. This is performed by soldering the above-described lead wire 6 in FIG. 2A (soldering or ultrasonic soldering).
  • S10 measures the performance of the solar cell.
  • FIG. 4 shows a measurement example of the present invention.
  • the resistance value between two adjacent contact bars from above the bus bar electrode 5 (finger electrode 4) in the state before soldering the lead wire 6 produced in steps S1 to S8 in FIG. A measurement example is shown.
  • FIG. 4A shows a plan view
  • FIG. 4B shows a measurement position example (number)
  • FIG. 4C shows a measurement value example.
  • FIG. 4A schematically shows the configuration of the finger electrode 4 and the bus bar electrode 5.
  • the bus bar electrode 5 is formed in a band shape in a perpendicular direction so as to be electrically connected to the plurality of finger electrodes 4 having a thin band shape.
  • (B) in FIG. 4 is the number of the place where the resistance value between the two contact bars is measured.
  • (1) (2) (3) (4) (5) (6) is the portion of the finger electrode 4 exposed on the bus bar electrode 5 (the portion of the electrically conductive path formed by the upper layer firing 42). The position number.
  • (8) is the number of the illustrated position on the bus bar electrode 5 in the middle, not directly above the finger electrode 4.
  • (C) in FIG. 4 shows an example of measured values at the position in (b) in FIG.
  • the resistance values of (1), (2), (3), (4), (5), and (6) in the figure were all as small as 0.20 ⁇ . This is measured as a small resistance value because the finger electrode 4 is exposed on the bus bar electrode 5 by the upper layer firing 42 and the two contact bars are brought into direct contact with the exposed portion.
  • the resistance values of (7) and (8) were both 0.30 ⁇ and a slightly large resistance value. This is because even if the finger electrode 4 is exposed on the bus bar electrode 5 by the upper layer firing 42, the two contact bars are brought into direct contact with the illustrated position apart from the exposed portion, so that the resistance is slightly large. Measured as a value.
  • the resistance value of the finger electrode 4 was 0.20 ⁇ , which was almost the same as those of (1) to (6).
  • the finger electrode 4 is exposed on the bus bar electrode 5 by the upper layer firing 42 according to the present invention, and the resistance value can be made extremely small.
  • FIG 5 and 6 show cross-sectional observation examples of the bus bar electrode of the present invention.
  • the sample conditions used are as shown below.
  • FIG. 5A shows a partial plan view when manufacturing up to the bus bar electrode 5 of the solar cell (S1 to S8 in FIG. 3). .
  • the horizontal band is the bus bar electrode 5, and the vertical line is the finger electrode 4.
  • the center of the strip-shaped lateral bus bar electrode 5 was cut in the lateral direction.
  • FIG. 6 shows a photograph of this cut surface.
  • FIG. 5 shows a cross-sectional enlarged image diagram. This shows an enlarged image of the cut surface when cut along the dotted cut surface in FIG.
  • a finger electrode 4 is formed on the silicon substrate 1 in a direction perpendicular to the paper surface, and a bus bar electrode 5 is formed on the finger electrode 4 in the lateral direction of the paper surface.
  • FIG. 6 shows an electron micrograph (Ag distribution slightly inclined in the cross section).
  • This is a photograph showing an SEM image of the Ag distribution in the cross-sectional view of FIG.
  • the part of the finger electrode 4 is easily understood by a white outline.
  • the portion indicated by the arrow (white) that “the silver of the finger electrode 4 has penetrated the nitride film 3” shown in the figure is high because the finger electrode 4 has penetrated the nitride film 3 by lower firing.
  • FIG. 6 shows an electron micrograph (cross section). This is a photograph showing the SEM image of the cross-sectional view of FIG.
  • the part of the finger electrode 4 is easily understood by a white outline.
  • the portion indicated by the arrow (black) that “the silver of the finger electrode 4 penetrates the nitride film 3” shown in the figure is high because the finger electrode 4 penetrates the nitride film 3 by the lower firing.
  • FIG. 7 shows a characteristic example of a solar cell using the bus bar electrode of the present invention. This shows an example of measuring the IV characteristics of the following various samples described on the right side.
  • NTA50-781-8 (Sample1) ⁇ NTA50-781-8 (Sample2) ⁇ NTA50-781-8 (Sample3) ⁇ NTA50-781-8 (Sample4) ⁇ NTA50-781-8 (Sample5) ⁇ NTA50-781-8 (Sample 6) ⁇ Ref820-4 (Sample1) ⁇ Ref820-4 (Sample2) ⁇ Ref820-4 (Sample3)
  • NTA50 is a bus bar electrode material
  • NTA glass 50% wt
  • the rest is silver
  • the next “781” is fired at 781 ° C.
  • the next “8” is a firing time of 8 seconds Represents the fact (far infrared heating).
  • Ref 820” represents 820 ° C.
  • the next “4” represents 4 seconds (far infrared heating).
  • FIG. 7 shows the IV characteristics measured and plotted for the samples prepared above.
  • I is slightly larger than the bus bar electrode 4 not including NTA glass as shown in the figure, and the resistance value is improved (decreased) by the paths 1 and 2 described above.
  • the efficiency of extracting electrons from the high electron concentration region can be improved.
  • FIG. 8 is an explanatory diagram of the upper layer firing of the present invention.
  • FIG. 8A shows an example of an upper layer firing (appropriate) micrograph
  • FIG. 8B shows an example of an upper layer firing (excessive) micrograph.
  • two thin lines in the horizontal direction are the finger electrodes 4, and one wide strip in the vertical direction is the bus bar electrode 5.
  • FIG. 1 is a configuration diagram of one embodiment of the present invention. It is principal part explanatory drawing of this invention. It is an example of a manufacturing process of a solar cell using the NTA glass of the present invention. It is a measurement example of the present invention. It is a cross-sectional observation example (the 1) of the bus-bar electrode of this invention. It is a cross-sectional observation example (the 2) of the bus-bar electrode of this invention. It is an example of the characteristic of the solar cell using the bus-bar electrode of this invention. It is explanatory drawing of the upper layer filing of this invention. It is explanatory drawing of a prior art.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
PCT/JP2017/023163 2016-07-14 2017-06-23 太陽電池および太陽電池の製造方法 WO2018012248A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020187037405A KR102230367B1 (ko) 2016-07-14 2017-06-23 태양전지 및 태양전지의 제조방법
CN201780035719.0A CN109314149A (zh) 2016-07-14 2017-06-23 太阳电池及太阳电池的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016139009A JP6810986B2 (ja) 2016-07-14 2016-07-14 太陽電池および太陽電池の製造方法
JP2016-139009 2016-07-14

Publications (1)

Publication Number Publication Date
WO2018012248A1 true WO2018012248A1 (ja) 2018-01-18

Family

ID=60952435

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/023163 WO2018012248A1 (ja) 2016-07-14 2017-06-23 太陽電池および太陽電池の製造方法

Country Status (5)

Country Link
JP (1) JP6810986B2 (zh)
KR (1) KR102230367B1 (zh)
CN (1) CN109314149A (zh)
TW (1) TWI637528B (zh)
WO (1) WO2018012248A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020004290A1 (ja) * 2018-06-26 2020-01-02 アートビーム有限会社 太陽電池および太陽電池の製造方法
TWI702413B (zh) * 2019-03-21 2020-08-21 元太科技工業股份有限公司 鄰近感測器及其運作方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI699899B (zh) * 2018-06-26 2020-07-21 日商亞特比目有限公司 太陽能電池及太陽能電池的製造方法
JP2021022735A (ja) * 2020-09-21 2021-02-18 アートビーム株式会社 太陽電池および太陽電池の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011144057A (ja) * 2010-01-13 2011-07-28 Tokyo Electronics Chemicals Corp 導電性ガラスペースト組成物
JP2012182457A (ja) * 2011-03-02 2012-09-20 Korea Electronics Telecommun 伝導性組成物並びにこれを含むシリコン太陽電池及びその製造方法
JP2012527780A (ja) * 2009-05-20 2012-11-08 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー シリコンウエハの前面上にグリッド電極を形成する方法
JP2015506108A (ja) * 2011-12-13 2015-02-26 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ 光起電力電池及びその形成方法
JP2015523707A (ja) * 2012-04-18 2015-08-13 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 太陽電池接点の印刷方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4885781B2 (ja) * 2007-03-30 2012-02-29 日立粉末冶金株式会社 導電性ペースト
CN104011882A (zh) * 2012-01-12 2014-08-27 应用材料公司 制造太阳能电池装置的方法
KR101275583B1 (ko) * 2012-09-11 2013-06-17 엘지전자 주식회사 태양 전지
KR20140056524A (ko) * 2012-10-29 2014-05-12 엘지전자 주식회사 태양전지
EP2853567A1 (en) * 2013-09-27 2015-04-01 Heraeus Precious Metals GmbH & Co. KG Solar cells produced from high ohmic wafers and paste comprising Ag metal-oxide additive
JP2016072518A (ja) * 2014-09-30 2016-05-09 パナソニックＩｐマネジメント株式会社 太陽電池モジュール

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012527780A (ja) * 2009-05-20 2012-11-08 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー シリコンウエハの前面上にグリッド電極を形成する方法
JP2011144057A (ja) * 2010-01-13 2011-07-28 Tokyo Electronics Chemicals Corp 導電性ガラスペースト組成物
JP2012182457A (ja) * 2011-03-02 2012-09-20 Korea Electronics Telecommun 伝導性組成物並びにこれを含むシリコン太陽電池及びその製造方法
JP2015506108A (ja) * 2011-12-13 2015-02-26 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ 光起電力電池及びその形成方法
JP2015523707A (ja) * 2012-04-18 2015-08-13 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 太陽電池接点の印刷方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020004290A1 (ja) * 2018-06-26 2020-01-02 アートビーム有限会社 太陽電池および太陽電池の製造方法
JPWO2020004290A1 (ja) * 2018-06-26 2021-07-01 アートビーム有限会社 太陽電池および太陽電池の製造方法
TWI702413B (zh) * 2019-03-21 2020-08-21 元太科技工業股份有限公司 鄰近感測器及其運作方法
US11226400B2 (en) 2019-03-21 2022-01-18 E Ink Holdings Inc. Proximity sensor and operation method thereof

Also Published As

Publication number Publication date
KR20190010644A (ko) 2019-01-30
CN109314149A (zh) 2019-02-05
JP2018010973A (ja) 2018-01-18
KR102230367B1 (ko) 2021-03-19
TW201807835A (zh) 2018-03-01
JP6810986B2 (ja) 2021-01-13
TWI637528B (zh) 2018-10-01

Similar Documents

Publication Publication Date Title
WO2018012248A1 (ja) 太陽電池および太陽電池の製造方法
JP5541370B2 (ja) 太陽電池の製造方法、太陽電池及び太陽電池モジュール
JP5626361B2 (ja) 太陽電池及び太陽電池モジュール、並びに太陽電池の製造方法
CN105474408B (zh) 太阳能电池元件及其制造方法
US8748310B2 (en) Method for producing a metal contact structure of a photovoltaic solar cell
TWI725035B (zh) 導電性膠、太陽能電池及太陽能電池的製造方法
US9171975B2 (en) Solar cell element and process for production thereof
KR20200138136A (ko) 태양전지 및 태양전지의 제조방법
DE102016221655A1 (de) Passivierte Kontakte für photovoltaische Zellen
CN107408587A (zh) 太阳能电池装置及其制造方法
EP2351109A2 (de) Verfahren zur herstellung einer solarzelle und solarzelle
WO2017073299A1 (ja) 超音波半田付け方法および超音波半田付け装置
JP2014220425A (ja) 導電性ペースト、及び太陽電池セルの製造方法
JP7058390B2 (ja) 太陽電池および太陽電池の製造方法
TW201306283A (zh) 背接觸式太陽能電池及其製造方法
JP2021022735A (ja) 太陽電池および太陽電池の製造方法
KR101791480B1 (ko) 태양전지 및 태양전지의 제조방법
CN110634618B (zh) 太阳能电池电极的制造方法、导电浆及其制造方法
CN108575097B (zh) 具有印刷的氧化物隧道结的叉指背接触金属-绝缘体-半导体太阳能电池
CN205542803U (zh) 太阳能电池结构
JP5541395B2 (ja) 太陽電池の製造方法
JP5105427B2 (ja) 焼成電極の形成方法とそれを利用する光電変換素子の製造方法。
JP2007035982A (ja) 太陽電池モジュールの製造方法
JP2014220426A (ja) 太陽電池セル用電極、太陽電池セル、及び太陽電池セルの製造方法
JP2008078239A (ja) 太陽電池セルの製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17827378

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20187037405

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17827378

Country of ref document: EP

Kind code of ref document: A1