KR102226378B1 - 기판 처리 장치 및 기판 처리 방법 - Google Patents

기판 처리 장치 및 기판 처리 방법 Download PDF

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Publication number
KR102226378B1
KR102226378B1 KR1020197022463A KR20197022463A KR102226378B1 KR 102226378 B1 KR102226378 B1 KR 102226378B1 KR 1020197022463 A KR1020197022463 A KR 1020197022463A KR 20197022463 A KR20197022463 A KR 20197022463A KR 102226378 B1 KR102226378 B1 KR 102226378B1
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KR
South Korea
Prior art keywords
valve
liquid
substrate
processing
leakage
Prior art date
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KR1020197022463A
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English (en)
Korean (ko)
Other versions
KR20190100368A (ko
Inventor
히토시 나카이
Original Assignee
가부시키가이샤 스크린 홀딩스
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Publication date
Application filed by 가부시키가이샤 스크린 홀딩스 filed Critical 가부시키가이샤 스크린 홀딩스
Priority claimed from PCT/JP2018/002151 external-priority patent/WO2018155054A1/ja
Publication of KR20190100368A publication Critical patent/KR20190100368A/ko
Application granted granted Critical
Publication of KR102226378B1 publication Critical patent/KR102226378B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020197022463A 2017-02-27 2018-01-24 기판 처리 장치 및 기판 처리 방법 KR102226378B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2017-035048 2017-02-27
JP2017035048 2017-02-27
JPJP-P-2017-242942 2017-12-19
JP2017242942A JP6975630B2 (ja) 2017-02-27 2017-12-19 基板処理装置および基板処理方法
PCT/JP2018/002151 WO2018155054A1 (ja) 2017-02-27 2018-01-24 基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
KR20190100368A KR20190100368A (ko) 2019-08-28
KR102226378B1 true KR102226378B1 (ko) 2021-03-10

Family

ID=63528274

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197022463A KR102226378B1 (ko) 2017-02-27 2018-01-24 기판 처리 장치 및 기판 처리 방법

Country Status (4)

Country Link
JP (1) JP6975630B2 (zh)
KR (1) KR102226378B1 (zh)
CN (1) CN110235226B (zh)
TW (1) TWI661871B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110534452B (zh) * 2018-11-08 2022-06-14 北京北方华创微电子装备有限公司 用于清洗工艺腔室的漏液监控装置及清洗工艺腔室
JP7364460B2 (ja) 2019-12-25 2023-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
TWI762072B (zh) * 2020-12-08 2022-04-21 力晶積成電子製造股份有限公司 晶圓清洗機台
DE102021100754A1 (de) * 2021-01-15 2022-07-21 Marco Systemanalyse Und Entwicklung Gmbh Dosierventil

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009158597A (ja) 2007-12-25 2009-07-16 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2017034120A (ja) 2015-08-03 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2017034188A (ja) 2015-08-05 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および処理液吐出方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2010521C3 (de) 1969-03-11 1974-05-09 Snam Progetti S.P.A., Mailand (Italien) Vorrichtung zur gleichzeitigen und quantitativen Bestimmung der Detonation und Frühzündung
JPH0770507B2 (ja) * 1989-07-05 1995-07-31 三菱電機株式会社 半導体ウエハ用洗浄装置
JP3577580B2 (ja) * 1998-03-17 2004-10-13 東京エレクトロン株式会社 空気駆動式液体供給装置
JP3730079B2 (ja) * 2000-03-21 2005-12-21 大日本スクリーン製造株式会社 基板処理装置
CN101436001B (zh) * 2003-07-28 2012-04-11 株式会社尼康 曝光装置、器件制造方法
JP2006156672A (ja) * 2004-11-29 2006-06-15 Dainippon Screen Mfg Co Ltd 基板処理装置
JP5073310B2 (ja) * 2007-02-13 2012-11-14 武蔵エンジニアリング株式会社 漏液検知機構およびそれを備えた液体材料塗布装置
KR20100046784A (ko) * 2008-10-28 2010-05-07 세메스 주식회사 기판 처리 장치 및 방법
CN103295938B (zh) * 2013-05-29 2017-10-10 上海华虹宏力半导体制造有限公司 半导体处理设备
JP6059087B2 (ja) * 2013-05-31 2017-01-11 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
CN105914167B (zh) * 2015-02-25 2018-09-04 株式会社思可林集团 基板处理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009158597A (ja) 2007-12-25 2009-07-16 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2017034120A (ja) 2015-08-03 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2017034188A (ja) 2015-08-05 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および処理液吐出方法

Also Published As

Publication number Publication date
CN110235226A (zh) 2019-09-13
TWI661871B (zh) 2019-06-11
JP2018142694A (ja) 2018-09-13
KR20190100368A (ko) 2019-08-28
JP6975630B2 (ja) 2021-12-01
CN110235226B (zh) 2022-12-23
TW201834754A (zh) 2018-10-01

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