KR102218136B1 - 패턴 형성 장치 및 패턴 형성 방법 - Google Patents

패턴 형성 장치 및 패턴 형성 방법 Download PDF

Info

Publication number
KR102218136B1
KR102218136B1 KR1020150135508A KR20150135508A KR102218136B1 KR 102218136 B1 KR102218136 B1 KR 102218136B1 KR 1020150135508 A KR1020150135508 A KR 1020150135508A KR 20150135508 A KR20150135508 A KR 20150135508A KR 102218136 B1 KR102218136 B1 KR 102218136B1
Authority
KR
South Korea
Prior art keywords
substrate
pattern
main surface
alignment marks
group
Prior art date
Application number
KR1020150135508A
Other languages
English (en)
Korean (ko)
Other versions
KR20160038790A (ko
Inventor
가즈히로 나카이
Original Assignee
가부시키가이샤 스크린 홀딩스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 스크린 홀딩스 filed Critical 가부시키가이샤 스크린 홀딩스
Publication of KR20160038790A publication Critical patent/KR20160038790A/ko
Application granted granted Critical
Publication of KR102218136B1 publication Critical patent/KR102218136B1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR1020150135508A 2014-09-30 2015-09-24 패턴 형성 장치 및 패턴 형성 방법 KR102218136B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-200521 2014-09-30
JP2014200521A JP6357064B2 (ja) 2014-09-30 2014-09-30 パターン形成装置およびパターン形成方法

Publications (2)

Publication Number Publication Date
KR20160038790A KR20160038790A (ko) 2016-04-07
KR102218136B1 true KR102218136B1 (ko) 2021-02-19

Family

ID=55789843

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150135508A KR102218136B1 (ko) 2014-09-30 2015-09-24 패턴 형성 장치 및 패턴 형성 방법

Country Status (3)

Country Link
JP (1) JP6357064B2 (ja)
KR (1) KR102218136B1 (ja)
TW (1) TWI647739B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190097065A (ko) 2016-12-20 2019-08-20 에베 그룹 에. 탈너 게엠베하 광-감지 층을 노광하기 위한 디바이스 및 방법
US10852528B2 (en) * 2016-12-20 2020-12-01 Ev Group E. Thallner Gmbh Method and device for exposure of photosensitive layer
CN109957504B (zh) * 2017-12-14 2022-08-02 长春长光华大智造测序设备有限公司 便于初始对准的高通量基因测序仪硅片及初始对准方法
JP7379183B2 (ja) 2020-01-28 2023-11-14 株式会社Ｓｃｒｅｅｎホールディングス ステージ姿勢推定装置、搬送装置、およびステージ姿勢推定方法
JP7374790B2 (ja) 2020-01-30 2023-11-07 株式会社Ｓｃｒｅｅｎホールディングス 搬送装置および搬送方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000228347A (ja) 1999-02-08 2000-08-15 Nikon Corp 位置決め方法及び露光装置
JP2007220986A (ja) * 2006-02-17 2007-08-30 Nikon Corp デバイス製造処理方法
JP2012079739A (ja) 2010-09-30 2012-04-19 Dainippon Screen Mfg Co Ltd 変位算出方法、描画データの補正方法、描画方法および描画装置
JP2013012639A (ja) 2011-06-30 2013-01-17 Dainippon Screen Mfg Co Ltd パターン描画装置およびパターン描画方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2622573B2 (ja) * 1988-01-27 1997-06-18 キヤノン株式会社 マーク検知装置及び方法
JP3169068B2 (ja) * 1997-12-04 2001-05-21 日本電気株式会社 電子線露光方法及び半導体ウエハ
JPH11329950A (ja) * 1998-05-13 1999-11-30 Nikon Corp 位置検出方法、露光方法及び露光装置
WO2000057126A1 (fr) * 1999-03-24 2000-09-28 Nikon Corporation Dispositifs et procedes de determination de position, d'exposition, et de determination d'alignement
JPWO2006025386A1 (ja) * 2004-08-31 2008-05-08 株式会社ニコン 位置合わせ方法、処理システム、基板の投入再現性計測方法、位置計測方法、露光方法、基板処理装置、計測方法及び計測装置
JP2008249958A (ja) 2007-03-30 2008-10-16 Fujifilm Corp 基準位置計測装置及び方法、並びに描画装置
US20080292177A1 (en) * 2007-05-23 2008-11-27 Sheets Ronald E System and Method for Providing Backside Alignment in a Lithographic Projection System
JP5538048B2 (ja) * 2010-04-22 2014-07-02 日東電工株式会社 アライメントマークの検出方法および配線回路基板の製造方法
JP5703069B2 (ja) * 2010-09-30 2015-04-15 株式会社Ｓｃｒｅｅｎホールディングス 描画装置および描画方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000228347A (ja) 1999-02-08 2000-08-15 Nikon Corp 位置決め方法及び露光装置
JP2007220986A (ja) * 2006-02-17 2007-08-30 Nikon Corp デバイス製造処理方法
JP2012079739A (ja) 2010-09-30 2012-04-19 Dainippon Screen Mfg Co Ltd 変位算出方法、描画データの補正方法、描画方法および描画装置
JP2013012639A (ja) 2011-06-30 2013-01-17 Dainippon Screen Mfg Co Ltd パターン描画装置およびパターン描画方法

Also Published As

Publication number Publication date
JP2016072434A (ja) 2016-05-09
KR20160038790A (ko) 2016-04-07
JP6357064B2 (ja) 2018-07-11
TWI647739B (zh) 2019-01-11
TW201628060A (zh) 2016-08-01

Similar Documents

Publication Publication Date Title
KR102218136B1 (ko) 패턴 형성 장치 및 패턴 형성 방법
CN103034067B (zh) 将图案应用至衬底的方法、器件制造方法以及用于这些方法的光刻设备
US9013674B2 (en) Exposure apparatus including the exposure head and control method thereof
JP4734298B2 (ja) リソグラフィ装置およびデバイス製造方法
JP6069509B2 (ja) 定量的レチクル歪み測定システム
JP2009200105A (ja) 露光装置
KR20150034080A (ko) 위치 계측 장치, 얼라인먼트 장치, 패턴 묘화 장치 및 위치 계측 방법
KR20220143743A (ko) 리소그래피 공정에서 오버레이 오류를 보정하기 위한 시스템 및 방법
JP2010191127A (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法
JP2010231062A (ja) 描画装置および描画方法
KR20160037801A (ko) 배선 데이터의 생성 장치, 생성 방법, 및 묘화 시스템
TWI688840B (zh) 用於識別基板上之高度異常或污染物之方法、感測器、微影設備及電腦程式產品
KR102348544B1 (ko) 묘화 장치 및 묘화 방법
US9210814B2 (en) Apparatuses and methods for compensation of carrier distortions from measurement machines
JP5336301B2 (ja) パターン描画方法、パターン描画装置および描画データ生成方法
JPWO2007007626A1 (ja) 露光方法及び露光装置、並びにデバイス製造方法
US20160091794A1 (en) Drawing method
JP2013026383A (ja) 位置合わせ装置、位置合わせ方法、および、描画装置
KR101917014B1 (ko) 직접 묘화 장치용의 gui 장치, 직접 묘화 시스템, 묘화 영역 설정 방법 및 프로그램
JP2010113001A (ja) 直接露光方法および直接露光装置
JP2012198372A (ja) 描画装置および描画方法
WO2022190706A1 (ja) 露光方法および露光装置
TWI770570B (zh) 描繪方法及描繪裝置
KR101800990B1 (ko) 패턴 묘화 장치용의 gui 장치, 패턴 묘화 시스템, 잡 티켓 갱신 방법 및 프로그램
JP2012209443A (ja) パターン描画装置およびパターン描画方法

Legal Events

Date Code Title Description
A201 Request for examination
A302 Request for accelerated examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant