KR102213047B1 - 혼합된 금속-실리콘-산화물 장벽을 포함하는 수분장벽 및 이의 용도 - Google Patents

혼합된 금속-실리콘-산화물 장벽을 포함하는 수분장벽 및 이의 용도 Download PDF

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KR102213047B1
KR102213047B1 KR1020157023229A KR20157023229A KR102213047B1 KR 102213047 B1 KR102213047 B1 KR 102213047B1 KR 1020157023229 A KR1020157023229 A KR 1020157023229A KR 20157023229 A KR20157023229 A KR 20157023229A KR 102213047 B1 KR102213047 B1 KR 102213047B1
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substrate
silicon
film
metal
oxygen
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KR20150125941A (ko
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에릭 알. 딕키
브라이언 라슨 댄포스
Original Assignee
로터스 어플라이드 테크놀로지, 엘엘씨
도판 인사츠 가부시키가이샤
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    • H01L23/291—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H01L21/0228—
    • H01L21/28194—
    • H01L23/564—
    • H01L51/5253—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Ceramic Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Formation Of Insulating Films (AREA)
KR1020157023229A 2013-02-27 2014-02-26 혼합된 금속-실리콘-산화물 장벽을 포함하는 수분장벽 및 이의 용도 Active KR102213047B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361770230P 2013-02-27 2013-02-27
US61/770,230 2013-02-27
PCT/US2014/018765 WO2014134204A1 (en) 2013-02-27 2014-02-26 Mixed metal-silicon-oxide barriers

Publications (2)

Publication Number Publication Date
KR20150125941A KR20150125941A (ko) 2015-11-10
KR102213047B1 true KR102213047B1 (ko) 2021-02-05

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Country Link
US (2) US9263359B2 (https=)
EP (1) EP2922979B1 (https=)
JP (1) JP6437463B2 (https=)
KR (1) KR102213047B1 (https=)
CN (1) CN105143501B (https=)
WO (1) WO2014134204A1 (https=)

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CN107108917B (zh) * 2014-07-24 2020-04-28 欧司朗Oled股份有限公司 屏障层的制备方法和包含这种屏障层的载体主体
DE102015102535B4 (de) * 2015-02-23 2023-08-03 Infineon Technologies Ag Verbundsystem und Verfahren zum haftenden Verbinden eines hygroskopischen Materials
KR20180025901A (ko) 2015-06-29 2018-03-09 쓰리엠 이노베이티브 프로퍼티즈 캄파니 초박형 배리어 라미네이트 및 장치
US20180269426A1 (en) * 2015-10-01 2018-09-20 Sharp Kabushiki Kaisha Electroluminescence device
CN105405986A (zh) * 2015-12-16 2016-03-16 张家港康得新光电材料有限公司 水汽阻隔膜、其制备方法与包含其的显示器
US10354950B2 (en) * 2016-02-25 2019-07-16 Ferric Inc. Systems and methods for microelectronics fabrication and packaging using a magnetic polymer
JP2019513189A (ja) 2016-04-01 2019-05-23 スリーエム イノベイティブ プロパティズ カンパニー ロールツーロール原子層堆積装置及び方法
US10049869B2 (en) * 2016-09-30 2018-08-14 Lam Research Corporation Composite dielectric interface layers for interconnect structures
KR102799270B1 (ko) * 2017-01-05 2025-04-23 주성엔지니어링(주) 투습 방지막과 그 제조 방법
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11685991B2 (en) * 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10655217B2 (en) * 2018-05-01 2020-05-19 Spts Technologies Limited Method of forming a passivation layer on a substrate
WO2020014631A1 (en) * 2018-07-12 2020-01-16 Lotus Applied Technology, Llc Water-insensitive methods of forming metal oxide films and products related thereto
JP2020113494A (ja) * 2019-01-16 2020-07-27 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法
CN113906579B (zh) * 2019-03-08 2025-02-11 Dnf有限公司 硅金属氧化物封装膜及其制备方法
KR102288163B1 (ko) * 2019-03-08 2021-08-11 (주)디엔에프 박막 내 금속 또는 금속 산화물을 포함하는 실리콘 금속 산화물 봉지막 및 이의 제조방법
KR102385042B1 (ko) * 2020-03-20 2022-04-11 한양대학교 산학협력단 봉지막 및 그 제조방법
US20230212746A1 (en) 2020-06-10 2023-07-06 3M Innovative Properties Company Roll-to-roll vapor deposition apparatus and method

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Also Published As

Publication number Publication date
EP2922979B1 (en) 2020-10-28
KR20150125941A (ko) 2015-11-10
CN105143501A (zh) 2015-12-09
JP2016515166A (ja) 2016-05-26
EP2922979A1 (en) 2015-09-30
US9263359B2 (en) 2016-02-16
US20140242736A1 (en) 2014-08-28
EP2922979A4 (en) 2016-09-14
CN105143501B (zh) 2019-06-07
JP6437463B2 (ja) 2018-12-12
US20170025635A1 (en) 2017-01-26
WO2014134204A1 (en) 2014-09-04

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