KR102196673B1 - 산화물 본딩된 웨이퍼 스택 내에서의 다이 캡슐화 - Google Patents

산화물 본딩된 웨이퍼 스택 내에서의 다이 캡슐화 Download PDF

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KR102196673B1
KR102196673B1 KR1020197030560A KR20197030560A KR102196673B1 KR 102196673 B1 KR102196673 B1 KR 102196673B1 KR 1020197030560 A KR1020197030560 A KR 1020197030560A KR 20197030560 A KR20197030560 A KR 20197030560A KR 102196673 B1 KR102196673 B1 KR 102196673B1
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wafer
cavity
semiconductor
assembly
bonded
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KR20190124794A (ko
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존 제이. 드래브
제이슨 지. 밀네
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레이던 컴퍼니
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  • Wire Bonding (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
KR1020197030560A 2017-05-16 2017-11-16 산화물 본딩된 웨이퍼 스택 내에서의 다이 캡슐화 Active KR102196673B1 (ko)

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Application Number Priority Date Filing Date Title
KR1020207036818A KR102301805B1 (ko) 2017-05-16 2017-11-16 산화물 본딩된 웨이퍼 스택 내에서의 다이 캡슐화

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/596,663 2017-05-16
US15/596,663 US10242967B2 (en) 2017-05-16 2017-05-16 Die encapsulation in oxide bonded wafer stack
PCT/US2017/061922 WO2018212785A1 (en) 2017-05-16 2017-11-16 Die encapsulation in oxide bonded wafer stack

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KR1020207036818A Division KR102301805B1 (ko) 2017-05-16 2017-11-16 산화물 본딩된 웨이퍼 스택 내에서의 다이 캡슐화

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KR20190124794A KR20190124794A (ko) 2019-11-05
KR102196673B1 true KR102196673B1 (ko) 2020-12-30

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