KR102193485B1 - 구리 도금 욕 조성물 - Google Patents

구리 도금 욕 조성물 Download PDF

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Publication number
KR102193485B1
KR102193485B1 KR1020157016894A KR20157016894A KR102193485B1 KR 102193485 B1 KR102193485 B1 KR 102193485B1 KR 1020157016894 A KR1020157016894 A KR 1020157016894A KR 20157016894 A KR20157016894 A KR 20157016894A KR 102193485 B1 KR102193485 B1 KR 102193485B1
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South Korea
Prior art keywords
aqueous acidic
formula
electroplating bath
copper electroplating
copper
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Korean (ko)
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KR20150088307A (ko
Inventor
하이코 브루너
베른트 뢸프스
아그니에시카 비트착
라르스 콜만
올리비에 만
크리슈티안 오데
티모 방게르터
안젤로 페로
안드레아스 키르브스
안드레 슈뫼켈
디르크 로데
슈테파니 악커만
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아토테크더치랜드게엠베하
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020157016894A 2012-11-26 2013-11-12 구리 도금 욕 조성물 Active KR102193485B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP12194261.9A EP2735627A1 (en) 2012-11-26 2012-11-26 Copper plating bath composition
EP12194261.9 2012-11-26
PCT/EP2013/073629 WO2014079737A2 (en) 2012-11-26 2013-11-12 Copper plating bath composition

Publications (2)

Publication Number Publication Date
KR20150088307A KR20150088307A (ko) 2015-07-31
KR102193485B1 true KR102193485B1 (ko) 2020-12-22

Family

ID=47226032

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157016894A Active KR102193485B1 (ko) 2012-11-26 2013-11-12 구리 도금 욕 조성물

Country Status (8)

Country Link
US (1) US9551080B2 (OSRAM)
EP (2) EP2735627A1 (OSRAM)
JP (1) JP6279598B2 (OSRAM)
KR (1) KR102193485B1 (OSRAM)
CN (1) CN104854265B (OSRAM)
PH (1) PH12015501137A1 (OSRAM)
TW (1) TWI600802B (OSRAM)
WO (1) WO2014079737A2 (OSRAM)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
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EP2865787A1 (en) * 2013-10-22 2015-04-29 ATOTECH Deutschland GmbH Copper electroplating method
EP3034650B1 (en) * 2014-12-16 2017-06-21 ATOTECH Deutschland GmbH Plating bath compositions for electroless plating of metals and metal alloys
CN107771227B (zh) * 2015-04-20 2019-04-02 埃托特克德国有限公司 电解铜镀液组合物及其用法
US10767275B2 (en) 2015-08-31 2020-09-08 Atotech Deutschland Gmbh Aqueous copper plating baths and a method for deposition of copper or copper alloy onto a substrate
EP3135709B1 (en) * 2015-08-31 2018-01-10 ATOTECH Deutschland GmbH Imidazoyl urea polymers and their use in metal or metal alloy plating bath compositions
EP3141633B1 (en) 2015-09-10 2018-05-02 ATOTECH Deutschland GmbH Copper plating bath composition
CN109072438B (zh) 2016-05-04 2021-08-13 德国艾托特克公司 沉积金属或金属合金到衬底表面及包括衬底表面活化的方法
CN109790638B (zh) 2016-08-15 2021-06-18 德国艾托特克公司 用于电解镀铜的酸性水性组合物
EP3360988B1 (en) 2017-02-09 2019-06-26 ATOTECH Deutschland GmbH Pyridinium compounds, a synthesis method therefor, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths
EP3508620B1 (en) 2018-01-09 2021-05-19 ATOTECH Deutschland GmbH Ureylene additive, its use and a preparation method therefor
EP3901331A1 (en) 2020-04-23 2021-10-27 ATOTECH Deutschland GmbH Acidic aqueous composition for electrolytically depositing a copper deposit
EP3933073B1 (en) * 2020-06-29 2023-11-29 Atotech Deutschland GmbH & Co. KG Copper electroplating bath
CN112899736A (zh) * 2021-01-15 2021-06-04 深圳中科利尔科技有限公司 一种pcb高纵横通孔电镀铜添加剂及其制备方法
EP4032930B1 (en) 2021-01-22 2023-08-30 Atotech Deutschland GmbH & Co. KG Biuret-based quaternized polymers and their use in metal or metal alloy plating baths
EP4063533A1 (en) 2021-03-25 2022-09-28 Atotech Deutschland GmbH & Co. KG A process for electrochemical deposition of copper with different current densities
KR102339862B1 (ko) * 2021-07-06 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 회로패턴 형성용 전기도금 조성물
KR102339861B1 (ko) * 2021-07-26 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 금속박 형성용 전기도금 조성물
KR102339866B1 (ko) * 2021-08-04 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 유리비아홀 기판 도금을 위한 전기도금 조성물
CN118812171A (zh) * 2023-04-17 2024-10-22 财团法人工业技术研究院 贯穿玻璃的通孔的铜金属化方法和由此制造的玻璃制品

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DE3012168A1 (de) * 1980-03-27 1981-10-01 Schering Ag Berlin Und Bergkamen, 1000 Berlin Verfahren zur galvanischen abscheidung von kupferniederschlaegen
DE4126502C1 (OSRAM) * 1991-08-07 1993-02-11 Schering Ag Berlin Und Bergkamen, 1000 Berlin, De
DE4344387C2 (de) 1993-12-24 1996-09-05 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Kupfer und Anordnung zur Durchführung des Verfahrens
DE19545231A1 (de) 1995-11-21 1997-05-22 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Metallschichten
US6387229B1 (en) * 1999-05-07 2002-05-14 Enthone, Inc. Alloy plating
JP2001073182A (ja) * 1999-07-15 2001-03-21 Boc Group Inc:The 改良された酸性銅電気メッキ用溶液
TWI228156B (en) 2001-05-09 2005-02-21 Ebara Udylite Kk Copper-plating bath, method for electroplating substrate by using the same, and additives for the bath
CN1410601A (zh) 2001-09-27 2003-04-16 长春石油化学股份有限公司 用于铜集成电路内连线的铜电镀液组合物
JP4083171B2 (ja) 2002-12-25 2008-04-30 日鉱金属株式会社 特定骨格を有する四級アミン化合物重合体及び有機硫黄化合物を添加剤として含む銅電解液並びにそれにより製造される電解銅箔
JP4255130B2 (ja) 2003-07-29 2009-04-15 日鉱金属株式会社 特定骨格を有するジアルキルアミノ基含有重合体及び有機硫黄化合物を添加剤として含む銅電解液並びにそれにより製造される電解銅箔
DE602005022650D1 (de) * 2004-04-26 2010-09-16 Rohm & Haas Elect Mat Verbessertes Plattierungsverfahren
DE102005060030A1 (de) * 2005-12-15 2007-06-21 Coventya Gmbh Quervernetzte Polymere, diese enthaltende Galvanisierungsbäder sowie deren Verwendung
EP2292679B1 (de) * 2009-09-08 2020-03-11 ATOTECH Deutschland GmbH Polymere mit Aminoendgruppen und deren Verwendung als Additive für galvanische Zink- und Zinklegierungsbäder
DE102011008836B4 (de) * 2010-08-17 2013-01-10 Umicore Galvanotechnik Gmbh Elektrolyt und Verfahren zur Abscheidung von Kupfer-Zinn-Legierungsschichten
EP2518187A1 (en) * 2011-04-26 2012-10-31 Atotech Deutschland GmbH Aqueous acidic bath for electrolytic deposition of copper
EP2865787A1 (en) * 2013-10-22 2015-04-29 ATOTECH Deutschland GmbH Copper electroplating method

Also Published As

Publication number Publication date
EP2922985B1 (en) 2016-09-14
KR20150088307A (ko) 2015-07-31
JP2016503461A (ja) 2016-02-04
CN104854265B (zh) 2017-08-08
EP2922985A2 (en) 2015-09-30
US9551080B2 (en) 2017-01-24
TWI600802B (zh) 2017-10-01
TW201422854A (zh) 2014-06-16
WO2014079737A2 (en) 2014-05-30
CN104854265A (zh) 2015-08-19
WO2014079737A3 (en) 2014-09-12
JP6279598B2 (ja) 2018-02-14
PH12015501137B1 (en) 2015-08-03
EP2735627A1 (en) 2014-05-28
PH12015501137A1 (en) 2015-08-03
US20150299883A1 (en) 2015-10-22

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