KR102190345B1 - 조명 빔 오정렬의 보정을 위한 시스템 및 방법 - Google Patents
조명 빔 오정렬의 보정을 위한 시스템 및 방법 Download PDFInfo
- Publication number
- KR102190345B1 KR102190345B1 KR1020187033743A KR20187033743A KR102190345B1 KR 102190345 B1 KR102190345 B1 KR 102190345B1 KR 1020187033743 A KR1020187033743 A KR 1020187033743A KR 20187033743 A KR20187033743 A KR 20187033743A KR 102190345 B1 KR102190345 B1 KR 102190345B1
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- South Korea
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Classifications
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- H01L22/30—
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/108—Scanning systems having one or more prisms as scanning elements
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- H01L21/67242—
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- H01L22/12—
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- H01L22/24—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Optics & Photonics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Mounting And Adjusting Of Optical Elements (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Slot Machines And Peripheral Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662330756P | 2016-05-02 | 2016-05-02 | |
| US62/330,756 | 2016-05-02 | ||
| US15/477,885 | 2017-04-03 | ||
| US15/477,885 US10495579B2 (en) | 2016-05-02 | 2017-04-03 | System and method for compensation of illumination beam misalignment |
| PCT/US2017/030258 WO2017192403A1 (en) | 2016-05-02 | 2017-04-28 | System and method for compensation of illumination beam misalignment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180132923A KR20180132923A (ko) | 2018-12-12 |
| KR102190345B1 true KR102190345B1 (ko) | 2020-12-11 |
Family
ID=60203214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187033743A Active KR102190345B1 (ko) | 2016-05-02 | 2017-04-28 | 조명 빔 오정렬의 보정을 위한 시스템 및 방법 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10495579B2 (https=) |
| JP (1) | JP6741787B2 (https=) |
| KR (1) | KR102190345B1 (https=) |
| CN (1) | CN109075099B (https=) |
| DE (1) | DE112017002293B4 (https=) |
| IL (1) | IL262231B (https=) |
| SG (1) | SG11201806925PA (https=) |
| TW (1) | TWI728104B (https=) |
| WO (1) | WO2017192403A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10365211B2 (en) * | 2017-09-26 | 2019-07-30 | Kla-Tencor Corporation | Systems and methods for metrology beam stabilization |
| DE102020209268B3 (de) | 2020-07-22 | 2021-10-14 | Hochschule Emden/Leer | Optisches System |
| CN117110311B (zh) * | 2022-05-17 | 2025-09-12 | 深圳中科飞测科技股份有限公司 | 一种光学检测系统及图像动态对准方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001334376A (ja) | 2000-05-26 | 2001-12-04 | Nec Toyama Ltd | レーザ加工装置及びレーザ光スポット位置補正方法 |
| US20040109487A1 (en) | 2002-12-06 | 2004-06-10 | Zhang Guangzhi G. | External cavity laser with dispersion compensation for mode-hop-free tuning |
| US20060202115A1 (en) | 2005-03-10 | 2006-09-14 | Hitachi Via Mechanics, Ltd. | Apparatus and method for beam drift compensation |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60221720A (ja) * | 1984-04-18 | 1985-11-06 | Fuji Photo Film Co Ltd | 光ビ−ム走査装置 |
| US4696047A (en) | 1985-02-28 | 1987-09-22 | Texas Instruments Incorporated | Apparatus for automatically inspecting electrical connecting pins |
| US6618421B2 (en) | 1998-07-18 | 2003-09-09 | Cymer, Inc. | High repetition rate gas discharge laser with precise pulse timing control |
| JP2003179142A (ja) | 2001-12-10 | 2003-06-27 | Nec Microsystems Ltd | ジッタ検査回路を搭載した半導体装置およびそのジッタ検査方法 |
| US6831736B2 (en) | 2002-10-07 | 2004-12-14 | Applied Materials Israel, Ltd. | Method of and apparatus for line alignment to compensate for static and dynamic inaccuracies in scanning |
| US7307711B2 (en) * | 2004-10-29 | 2007-12-11 | Hitachi Via Mechanics (Usa), Inc. | Fluorescence based laser alignment and testing of complex beam delivery systems and lenses |
| JP4908925B2 (ja) * | 2006-02-08 | 2012-04-04 | 株式会社日立ハイテクノロジーズ | ウェハ表面欠陥検査装置およびその方法 |
| KR20080014385A (ko) | 2006-08-11 | 2008-02-14 | 동부일렉트로닉스 주식회사 | 레이저 빔 위치 자동 조정 장치 및 이를 이용한 레이저 빔위치 자동 조정 방법 |
| US8379204B1 (en) | 2007-08-17 | 2013-02-19 | Gsi Group Corporation | System and method for automatic laser beam alignment |
| EP2257854B1 (en) | 2008-02-26 | 2018-10-31 | 3M Innovative Properties Company | Multi-photon exposure system |
| JP5331586B2 (ja) * | 2009-06-18 | 2013-10-30 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置および検査方法 |
| US9068952B2 (en) * | 2009-09-02 | 2015-06-30 | Kla-Tencor Corporation | Method and apparatus for producing and measuring dynamically focussed, steered, and shaped oblique laser illumination for spinning wafer inspection system |
| JP5134603B2 (ja) * | 2009-09-09 | 2013-01-30 | 株式会社日立ハイテクノロジーズ | 光ビーム調整方法及び光ビーム調整装置 |
| KR20110050821A (ko) | 2009-11-09 | 2011-05-17 | 삼성전자주식회사 | 지터를 감소시킬 수 있는 dll회로 및 이를 포함하는 반도체 장치 |
| JP5472470B2 (ja) | 2010-08-20 | 2014-04-16 | 富士通株式会社 | 半導体装置 |
| US8995746B2 (en) | 2013-03-15 | 2015-03-31 | KLA—Tencor Corporation | Image synchronization of scanning wafer inspection system |
-
2017
- 2017-04-03 US US15/477,885 patent/US10495579B2/en active Active
- 2017-04-28 SG SG11201806925PA patent/SG11201806925PA/en unknown
- 2017-04-28 WO PCT/US2017/030258 patent/WO2017192403A1/en not_active Ceased
- 2017-04-28 KR KR1020187033743A patent/KR102190345B1/ko active Active
- 2017-04-28 CN CN201780027202.7A patent/CN109075099B/zh active Active
- 2017-04-28 DE DE112017002293.2T patent/DE112017002293B4/de active Active
- 2017-04-28 JP JP2018557327A patent/JP6741787B2/ja active Active
- 2017-05-02 TW TW106114548A patent/TWI728104B/zh active
-
2018
- 2018-10-09 IL IL262231A patent/IL262231B/en active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001334376A (ja) | 2000-05-26 | 2001-12-04 | Nec Toyama Ltd | レーザ加工装置及びレーザ光スポット位置補正方法 |
| US20040109487A1 (en) | 2002-12-06 | 2004-06-10 | Zhang Guangzhi G. | External cavity laser with dispersion compensation for mode-hop-free tuning |
| US20060202115A1 (en) | 2005-03-10 | 2006-09-14 | Hitachi Via Mechanics, Ltd. | Apparatus and method for beam drift compensation |
Also Published As
| Publication number | Publication date |
|---|---|
| IL262231A (en) | 2018-11-29 |
| KR20180132923A (ko) | 2018-12-12 |
| DE112017002293B4 (de) | 2025-06-05 |
| CN109075099B (zh) | 2023-07-14 |
| JP6741787B2 (ja) | 2020-08-19 |
| SG11201806925PA (en) | 2018-11-29 |
| DE112017002293T5 (de) | 2019-02-14 |
| TWI728104B (zh) | 2021-05-21 |
| TW201743048A (zh) | 2017-12-16 |
| US20170336329A1 (en) | 2017-11-23 |
| CN109075099A (zh) | 2018-12-21 |
| US10495579B2 (en) | 2019-12-03 |
| IL262231B (en) | 2021-06-30 |
| WO2017192403A1 (en) | 2017-11-09 |
| JP2019523981A (ja) | 2019-08-29 |
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| PN2301 | Change of applicant |
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| A201 | Request for examination | ||
| A302 | Request for accelerated examination | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
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| PA0201 | Request for examination |
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