JP6741787B2 - 照明ビームの位置ずれの補償のためのシステムおよび方法 - Google Patents

照明ビームの位置ずれの補償のためのシステムおよび方法 Download PDF

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Publication number
JP6741787B2
JP6741787B2 JP2018557327A JP2018557327A JP6741787B2 JP 6741787 B2 JP6741787 B2 JP 6741787B2 JP 2018557327 A JP2018557327 A JP 2018557327A JP 2018557327 A JP2018557327 A JP 2018557327A JP 6741787 B2 JP6741787 B2 JP 6741787B2
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Japanese (ja)
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JP2019523981A5 (https=
JP2019523981A (ja
Inventor
ジーウェイ スティーヴ シュー
ジーウェイ スティーヴ シュー
ユーリ ユディツキー
ユーリ ユディツキー
フランク リー
フランク リー
ティモシー スウィッシャー
ティモシー スウィッシャー
クワン オーイェン
クワン オーイェン
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KLA Corp
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KLA Corp
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G02B26/108—Scanning systems having one or more prisms as scanning elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Optics & Photonics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Slot Machines And Peripheral Devices (AREA)
JP2018557327A 2016-05-02 2017-04-28 照明ビームの位置ずれの補償のためのシステムおよび方法 Active JP6741787B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662330756P 2016-05-02 2016-05-02
US62/330,756 2016-05-02
US15/477,885 2017-04-03
US15/477,885 US10495579B2 (en) 2016-05-02 2017-04-03 System and method for compensation of illumination beam misalignment
PCT/US2017/030258 WO2017192403A1 (en) 2016-05-02 2017-04-28 System and method for compensation of illumination beam misalignment

Publications (3)

Publication Number Publication Date
JP2019523981A JP2019523981A (ja) 2019-08-29
JP2019523981A5 JP2019523981A5 (https=) 2020-06-11
JP6741787B2 true JP6741787B2 (ja) 2020-08-19

Family

ID=60203214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018557327A Active JP6741787B2 (ja) 2016-05-02 2017-04-28 照明ビームの位置ずれの補償のためのシステムおよび方法

Country Status (9)

Country Link
US (1) US10495579B2 (https=)
JP (1) JP6741787B2 (https=)
KR (1) KR102190345B1 (https=)
CN (1) CN109075099B (https=)
DE (1) DE112017002293B4 (https=)
IL (1) IL262231B (https=)
SG (1) SG11201806925PA (https=)
TW (1) TWI728104B (https=)
WO (1) WO2017192403A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10365211B2 (en) * 2017-09-26 2019-07-30 Kla-Tencor Corporation Systems and methods for metrology beam stabilization
DE102020209268B3 (de) 2020-07-22 2021-10-14 Hochschule Emden/Leer Optisches System
CN117110311B (zh) * 2022-05-17 2025-09-12 深圳中科飞测科技股份有限公司 一种光学检测系统及图像动态对准方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
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JPS60221720A (ja) * 1984-04-18 1985-11-06 Fuji Photo Film Co Ltd 光ビ−ム走査装置
US4696047A (en) 1985-02-28 1987-09-22 Texas Instruments Incorporated Apparatus for automatically inspecting electrical connecting pins
US6618421B2 (en) 1998-07-18 2003-09-09 Cymer, Inc. High repetition rate gas discharge laser with precise pulse timing control
JP2001334376A (ja) 2000-05-26 2001-12-04 Nec Toyama Ltd レーザ加工装置及びレーザ光スポット位置補正方法
JP2003179142A (ja) 2001-12-10 2003-06-27 Nec Microsystems Ltd ジッタ検査回路を搭載した半導体装置およびそのジッタ検査方法
US6831736B2 (en) 2002-10-07 2004-12-14 Applied Materials Israel, Ltd. Method of and apparatus for line alignment to compensate for static and dynamic inaccuracies in scanning
US6940879B2 (en) 2002-12-06 2005-09-06 New Focus, Inc. External cavity laser with dispersion compensation for mode-hop-free tuning
US7307711B2 (en) * 2004-10-29 2007-12-11 Hitachi Via Mechanics (Usa), Inc. Fluorescence based laser alignment and testing of complex beam delivery systems and lenses
US7321114B2 (en) * 2005-03-10 2008-01-22 Hitachi Via Mechanics, Ltd. Apparatus and method for beam drift compensation
JP4908925B2 (ja) * 2006-02-08 2012-04-04 株式会社日立ハイテクノロジーズ ウェハ表面欠陥検査装置およびその方法
KR20080014385A (ko) 2006-08-11 2008-02-14 동부일렉트로닉스 주식회사 레이저 빔 위치 자동 조정 장치 및 이를 이용한 레이저 빔위치 자동 조정 방법
US8379204B1 (en) 2007-08-17 2013-02-19 Gsi Group Corporation System and method for automatic laser beam alignment
EP2257854B1 (en) 2008-02-26 2018-10-31 3M Innovative Properties Company Multi-photon exposure system
JP5331586B2 (ja) * 2009-06-18 2013-10-30 株式会社日立ハイテクノロジーズ 欠陥検査装置および検査方法
US9068952B2 (en) * 2009-09-02 2015-06-30 Kla-Tencor Corporation Method and apparatus for producing and measuring dynamically focussed, steered, and shaped oblique laser illumination for spinning wafer inspection system
JP5134603B2 (ja) * 2009-09-09 2013-01-30 株式会社日立ハイテクノロジーズ 光ビーム調整方法及び光ビーム調整装置
KR20110050821A (ko) 2009-11-09 2011-05-17 삼성전자주식회사 지터를 감소시킬 수 있는 ｄｌｌ회로 및 이를 포함하는 반도체 장치
JP5472470B2 (ja) 2010-08-20 2014-04-16 富士通株式会社 半導体装置
US8995746B2 (en) 2013-03-15 2015-03-31 KLA—Tencor Corporation Image synchronization of scanning wafer inspection system

Also Published As

Publication number Publication date
IL262231A (en) 2018-11-29
KR20180132923A (ko) 2018-12-12
DE112017002293B4 (de) 2025-06-05
CN109075099B (zh) 2023-07-14
SG11201806925PA (en) 2018-11-29
DE112017002293T5 (de) 2019-02-14
TWI728104B (zh) 2021-05-21
TW201743048A (zh) 2017-12-16
KR102190345B1 (ko) 2020-12-11
US20170336329A1 (en) 2017-11-23
CN109075099A (zh) 2018-12-21
US10495579B2 (en) 2019-12-03
IL262231B (en) 2021-06-30
WO2017192403A1 (en) 2017-11-09
JP2019523981A (ja) 2019-08-29

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