KR102189133B1 - 발광 소자 및 발광 소자 패키지 - Google Patents

발광 소자 및 발광 소자 패키지 Download PDF

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Publication number
KR102189133B1
KR102189133B1 KR1020140140872A KR20140140872A KR102189133B1 KR 102189133 B1 KR102189133 B1 KR 102189133B1 KR 1020140140872 A KR1020140140872 A KR 1020140140872A KR 20140140872 A KR20140140872 A KR 20140140872A KR 102189133 B1 KR102189133 B1 KR 102189133B1
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South Korea
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holes
layer
light emitting
emitting device
semiconductor layer
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Korean (ko)
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KR20160045398A (ko
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이상열
서재원
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엘지이노텍 주식회사
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Priority to KR1020140140872A priority Critical patent/KR102189133B1/ko
Priority to JP2015195641A priority patent/JP6802625B2/ja
Priority to EP15188087.9A priority patent/EP3010050B1/en
Priority to US14/879,798 priority patent/US9786816B2/en
Priority to CN201510680266.XA priority patent/CN105529385B/zh
Publication of KR20160045398A publication Critical patent/KR20160045398A/ko
Application granted granted Critical
Publication of KR102189133B1 publication Critical patent/KR102189133B1/ko
Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
KR1020140140872A 2014-10-17 2014-10-17 발광 소자 및 발광 소자 패키지 Active KR102189133B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020140140872A KR102189133B1 (ko) 2014-10-17 2014-10-17 발광 소자 및 발광 소자 패키지
JP2015195641A JP6802625B2 (ja) 2014-10-17 2015-10-01 発光素子、発光素子パッケージ、及びパッケージを含む照明装置
EP15188087.9A EP3010050B1 (en) 2014-10-17 2015-10-02 Light emitting diode device
US14/879,798 US9786816B2 (en) 2014-10-17 2015-10-09 Light emitting device, light emitting device package, and lighting apparatus including the package
CN201510680266.XA CN105529385B (zh) 2014-10-17 2015-10-19 发光器件、发光器件封装以及包括该封装的照明装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140140872A KR102189133B1 (ko) 2014-10-17 2014-10-17 발광 소자 및 발광 소자 패키지

Publications (2)

Publication Number Publication Date
KR20160045398A KR20160045398A (ko) 2016-04-27
KR102189133B1 true KR102189133B1 (ko) 2020-12-09

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KR1020140140872A Active KR102189133B1 (ko) 2014-10-17 2014-10-17 발광 소자 및 발광 소자 패키지

Country Status (5)

Country Link
US (1) US9786816B2 (https=)
EP (1) EP3010050B1 (https=)
JP (1) JP6802625B2 (https=)
KR (1) KR102189133B1 (https=)
CN (1) CN105529385B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102631260B1 (ko) * 2016-04-08 2024-01-31 삼성디스플레이 주식회사 표시장치 및 표시장치 제조방법
TWI656637B (zh) * 2017-12-25 2019-04-11 友達光電股份有限公司 發光元件
US11355549B2 (en) 2017-12-29 2022-06-07 Lumileds Llc High density interconnect for segmented LEDs
DE102019121178A1 (de) 2019-08-06 2021-02-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines strahlungsemittierenden halbleiterchips und strahlungsemittierender halbleiterchip
KR102849292B1 (ko) * 2020-09-15 2025-08-22 삼성전자주식회사 반도체 발광소자 및 이를 구비한 발광소자 패키지
WO2022126611A1 (zh) * 2020-12-18 2022-06-23 天津三安光电有限公司 一种半导体发光元件

Citations (3)

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US20110227109A1 (en) 2010-03-22 2011-09-22 Seoul Opto Device Co., Ltd. High efficiency light emitting diode
JP2012114130A (ja) 2010-11-22 2012-06-14 Panasonic Corp 発光素子
CN103762283A (zh) 2013-12-24 2014-04-30 大连德豪光电科技有限公司 一种led倒装芯片

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US7119372B2 (en) 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
JP4796293B2 (ja) * 2004-11-04 2011-10-19 株式会社 日立ディスプレイズ 照明装置の製造方法
JP4678211B2 (ja) 2005-02-28 2011-04-27 三菱化学株式会社 発光装置
KR101144489B1 (ko) * 2005-12-23 2012-05-11 엘지이노텍 주식회사 Ｌｅｄ 패키지
US20080206516A1 (en) * 2007-02-22 2008-08-28 Yoshihiko Matsushima Surface mount circuit board, method for manufacturing surface mount circuit board, and method for mounting surface mount electronic devices
KR100907223B1 (ko) * 2007-07-03 2009-07-10 한국광기술원 수직형 발광 다이오드 및 그의 제조방법
DE102008032318A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen
KR101106151B1 (ko) * 2009-12-31 2012-01-20 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
JP5633477B2 (ja) * 2010-08-27 2014-12-03 豊田合成株式会社 発光素子
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
TWI553903B (zh) * 2010-12-20 2016-10-11 Ｌｇ伊諾特股份有限公司 發光元件及其製造方法
KR20130049894A (ko) * 2011-11-07 2013-05-15 삼성전자주식회사 반도체 발광소자 및 그 제조방법
KR101868537B1 (ko) * 2011-11-07 2018-06-19 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광 소자 패키지
JP5512736B2 (ja) * 2012-04-23 2014-06-04 シャープ株式会社 窒化物半導体発光素子およびその製造方法
JP5768759B2 (ja) 2012-04-27 2015-08-26 豊田合成株式会社 半導体発光素子
JP2014127565A (ja) * 2012-12-26 2014-07-07 Toyoda Gosei Co Ltd 半導体発光素子
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TWI616004B (zh) * 2013-11-27 2018-02-21 晶元光電股份有限公司 半導體發光元件
US9728698B2 (en) * 2014-06-03 2017-08-08 Seoul Viosys Co., Ltd. Light emitting device package having improved heat dissipation efficiency

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Publication number Priority date Publication date Assignee Title
US20110227109A1 (en) 2010-03-22 2011-09-22 Seoul Opto Device Co., Ltd. High efficiency light emitting diode
JP2012114130A (ja) 2010-11-22 2012-06-14 Panasonic Corp 発光素子
CN103762283A (zh) 2013-12-24 2014-04-30 大连德豪光电科技有限公司 一种led倒装芯片

Also Published As

Publication number Publication date
KR20160045398A (ko) 2016-04-27
CN105529385B (zh) 2019-08-23
JP2016082229A (ja) 2016-05-16
CN105529385A (zh) 2016-04-27
JP6802625B2 (ja) 2020-12-16
US20160111601A1 (en) 2016-04-21
US9786816B2 (en) 2017-10-10
EP3010050B1 (en) 2019-08-14
EP3010050A1 (en) 2016-04-20

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