KR102180406B1 - 에칭 방법 - Google Patents

에칭 방법 Download PDF

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Publication number
KR102180406B1
KR102180406B1 KR1020170058620A KR20170058620A KR102180406B1 KR 102180406 B1 KR102180406 B1 KR 102180406B1 KR 1020170058620 A KR1020170058620 A KR 1020170058620A KR 20170058620 A KR20170058620 A KR 20170058620A KR 102180406 B1 KR102180406 B1 KR 102180406B1
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KR
South Korea
Prior art keywords
gas
etching
frequency power
high frequency
silicon oxide
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KR1020170058620A
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English (en)
Korean (ko)
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KR20170129054A (ko
Inventor
타쿠 고히라
류이치 타카시마
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도쿄엘렉트론가부시키가이샤
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Publication of KR20170129054A publication Critical patent/KR20170129054A/ko
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    • H01L21/3065—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H01L21/67069—
    • H01L21/67098—
    • H01L21/67248—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020170058620A 2016-05-16 2017-05-11 에칭 방법 Active KR102180406B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016098205A JP6568822B2 (ja) 2016-05-16 2016-05-16 エッチング方法
JPJP-P-2016-098205 2016-05-16

Publications (2)

Publication Number Publication Date
KR20170129054A KR20170129054A (ko) 2017-11-24
KR102180406B1 true KR102180406B1 (ko) 2020-11-18

Family

ID=60295352

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170058620A Active KR102180406B1 (ko) 2016-05-16 2017-05-11 에칭 방법

Country Status (4)

Country Link
US (1) US20170330759A1 (enExample)
JP (1) JP6568822B2 (enExample)
KR (1) KR102180406B1 (enExample)
TW (1) TWI753906B (enExample)

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US9997374B2 (en) * 2015-12-18 2018-06-12 Tokyo Electron Limited Etching method
JP6832171B2 (ja) * 2017-01-24 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置のチャンバ本体の内部のクリーニングを含むプラズマ処理方法
WO2019035830A1 (en) * 2017-08-16 2019-02-21 Ecosense Lighting Inc MULTI-CHANNEL WHITE LIGHT DEVICE FOR HIGH-COLOR RENDERABLE WHITE LED ACCORDING LIGHT DELIVERY
JP6805358B2 (ja) * 2017-09-13 2020-12-23 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
US12224156B2 (en) * 2018-03-01 2025-02-11 Applied Materials, Inc. Microwave plasma source for spatial plasma enhanced atomic layer deposition (PE-ALD) processing tool
US11158517B2 (en) * 2019-01-18 2021-10-26 Tokyo Electron Limited Selective plasma etching of silicon oxide relative to silicon nitride by gas pulsing
KR102904251B1 (ko) * 2019-02-18 2025-12-24 도쿄엘렉트론가부시키가이샤 에칭 방법
JP7462383B2 (ja) * 2019-04-15 2024-04-05 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理装置
US11651969B2 (en) 2019-07-18 2023-05-16 Kioxia Corporation Etching method, semiconductor manufacturing apparatus, and method of manufacturing semiconductor device
US10950428B1 (en) * 2019-08-30 2021-03-16 Mattson Technology, Inc. Method for processing a workpiece
WO2021090516A1 (ja) 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
WO2021090798A1 (ja) 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
US12217972B2 (en) * 2019-12-13 2025-02-04 Lam Research Corporation Multi-state pulsing for achieving a balance between bow control and mask selectivity
JP7403314B2 (ja) * 2019-12-26 2023-12-22 東京エレクトロン株式会社 エッチング方法及びエッチング装置
KR102821639B1 (ko) * 2020-12-23 2025-06-18 주식회사 원익아이피에스 반도체 소자 제조 방법
JP7312160B2 (ja) * 2020-12-28 2023-07-20 株式会社アルバック エッチング装置及びエッチング方法
US11694902B2 (en) * 2021-02-18 2023-07-04 Applied Materials, Inc. Methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers
WO2022215649A1 (ja) * 2021-04-08 2022-10-13 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
JP7679463B2 (ja) * 2021-05-07 2025-05-19 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7679464B2 (ja) * 2021-05-07 2025-05-19 東京エレクトロン株式会社 エッチング方法及びエッチング装置
KR20230017748A (ko) * 2021-07-28 2023-02-06 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법, 플라즈마 처리 장치 및 플라즈마 처리 시스템
JP2023181081A (ja) * 2022-06-10 2023-12-21 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
TW202401563A (zh) * 2022-06-10 2024-01-01 日商東京威力科創股份有限公司 蝕刻方法及電漿處理系統

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KR100727834B1 (ko) * 2000-09-07 2007-06-14 다이킨 고교 가부시키가이샤 드라이 에칭 가스 및 드라이 에칭 방법

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JP2928577B2 (ja) * 1990-03-13 1999-08-03 キヤノン株式会社 プラズマ処理方法およびその装置
JP3084497B2 (ja) * 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
JPH07147273A (ja) 1993-11-24 1995-06-06 Tokyo Electron Ltd エッチング処理方法
US5683538A (en) * 1994-12-23 1997-11-04 International Business Machines Corporation Control of etch selectivity
JPH09232280A (ja) * 1996-02-23 1997-09-05 Sony Corp シリコン酸化膜のエッチング方法
JP4550981B2 (ja) * 1999-09-01 2010-09-22 東京エレクトロン株式会社 エッチング方法
US7256134B2 (en) * 2003-08-01 2007-08-14 Applied Materials, Inc. Selective etching of carbon-doped low-k dielectrics
JP2007537602A (ja) * 2004-05-11 2007-12-20 アプライド　マテリアルズ　インコーポレイテッド フルオロカーボン化学エッチングにおけるｈ２添加物を使用しての炭素ドープ酸化ケイ素エッチング
JP2012043869A (ja) * 2010-08-17 2012-03-01 Nippon Zeon Co Ltd エッチングガスおよびエッチング方法
KR20130063871A (ko) * 2011-12-07 2013-06-17 삼성전자주식회사 자기 소자 및 그 제조 방법
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JP6408903B2 (ja) * 2014-12-25 2018-10-17 東京エレクトロン株式会社 エッチング処理方法及びエッチング処理装置
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Also Published As

Publication number Publication date
US20170330759A1 (en) 2017-11-16
KR20170129054A (ko) 2017-11-24
TWI753906B (zh) 2022-02-01
JP6568822B2 (ja) 2019-08-28
JP2017208387A (ja) 2017-11-24
TW201742142A (zh) 2017-12-01

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